Patents by Inventor Daiki Yamada

Daiki Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200291882
    Abstract: An engine generator, comprising an engine, a power generator configured to generate electric power based on motive power of the engine, a cooling fan configured to generate a cooling wind for cooling the engine, a control panel configured to accept an operation input by a user, a storage chamber configured to store a constituent part of the control panel, a sensor unit configured to detect a predetermined gas in the storage chamber, and a controller configured to stop the engine based on a detection result of the sensor unit, wherein the storage chamber stores the sensor unit and communicates with outer air such that a gas in the storage chamber can be suctioned by the cooling fan.
    Type: Application
    Filed: January 21, 2020
    Publication date: September 17, 2020
    Inventors: Makoto YAMADA, Kunihiro KITSU, Daiki KAMIYAMA, Kazuya MIWA
  • Publication number: 20200200636
    Abstract: A pressure sensor including: a cylindrical casing extending in an axial direction; a diaphragm joined to the distal end side of the casing, extending in a direction intersecting the axis of the casing and deforming in accordance with pressure received on the distal end side; and a sensor section disposed inside the casing and outputting an electric signal corresponding to the deformation of the diaphragm. The diaphragm is provided with a plate-shaped base part and three or more protruding parts protruding from the distal end side surface of the base part toward the distal end side and set apart from each other. The relationships 0.05?H?2.5T and 0.05?(S2/S1)?0.8 are satisfied, where T (thickness), H (length), S1 (area of base distal end surface) and S2 (total area of protruding distal end surfaces) are as defined herein.
    Type: Application
    Filed: December 8, 2016
    Publication date: June 25, 2020
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Yusuke FUJI, Tatsunori YAMADA, Daiki GOTO, Junki IWABUCHI
  • Publication number: 20200156552
    Abstract: An opening/closing mechanism of a double opening console box includes right and left operation portions for opening a lid around a left or right rotation shaft, and an erroneous operation preventing device for preventing simultaneous right and left opening actions of the lid. The erroneous operation preventing device includes a center projecting portion provided to the lid, an erroneous operation prevention bar movable leftward/rightward relative to the lid, a centering component having a left-right-symmetric recess groove at a front end, and a spring member energizing the centering component in the front-rear direction relative to the erroneous operation prevention bar so that the center projecting portion is located at the rear end bottom of the recess groove.
    Type: Application
    Filed: October 11, 2019
    Publication date: May 21, 2020
    Inventors: Kohei YOSHIDA, Yasufumi IKE, Keigo HYOZAWA, Kunio YAMAZAKI, Daiki YAMADA
  • Publication number: 20200114704
    Abstract: A pneumatic tire 1 includes a carcass 6 extending between bead cores of bead portions via a tread portion 2 and sidewall portions, and a belt layer 7 arranged on an outer side in a tire radial direction of the carcass 6 and inside the tread portion 2. The pneumatic tire 1 has a noise damper 20 arranged on an inner cavity surface of the tread portion 2. Glass transition temperature of the noise damper 20 is in a range of from ?55 degrees Celsius to ?45 degrees Celsius.
    Type: Application
    Filed: December 11, 2019
    Publication date: April 16, 2020
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventors: Masako NAKATANI, Takahiro KAWACHI, Ayuko YAMADA, Keiichi NAKADERA, Hiroshi ITO, Shuichiro ONO, Daiki MUKOUGUCHI, Tatsuhiro TANAKA, Tetsuya MAEKAWA, Subaru TOYA
  • Patent number: 10578506
    Abstract: A pressure sensor includes: a diaphragm joined to a front side of a housing via a joint portion; a sensor portion; a connection portion connecting the diaphragm to the sensor portion; and a heat receiving portion disposed at the front side of the diaphragm. When: a minimum value of an area of a minimum inclusion region which is a virtual region, which include a cross-section of a portion from the heat receiving portion to the diaphragm and of which an overall length of a contour become minimum on a cross-section perpendicular to the axial line, is defined as a connection area Sn; and an area of a region surrounded by the joint portion on a projection plane perpendicular to the axial line when the diaphragm and the heat receiving portion are projected onto the projection plane is defined as a diaphragm effective area Sd, (Sn/Sd)?0.25 is satisfied.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: March 3, 2020
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Tatsunori Yamada, Shunsuke Tsuga, Yusuke Fuji, Junki Iwabuchi, Daiki Goto
  • Publication number: 20190375250
    Abstract: A pneumatic tire 1 includes a carcass 6 extending between bead cores of bead portions via a tread portion 2 and sidewall portions, and a belt layer 7 arranged on an outer side in a tire radial direction of the carcass 6 and inside the tread portion 2. The pneumatic tire 1 has a noise damper 20 arranged on an inner cavity surface of the tread portion 2. Glass transition temperature of the noise damper 20 is in a range of from ?55 degrees Celsius to ?45 degrees Celsius.
    Type: Application
    Filed: December 12, 2017
    Publication date: December 12, 2019
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventors: Masako NAKATANI, Takahiro KAWACHI, Ayuko YAMADA, Keiichi NAKADERA, Hiroshi ITO, Shuichiro ONO, Daiki MUKOUGUCHI, Tatsuhiro TANAKA, Tetsuya MAEKAWA, Subaru TOYA
  • Patent number: 10458789
    Abstract: A signal processing device for performing processing for reducing noise in a displacement amount measured on a basis of light reflected from a detection object includes a moving-average calculating unit that performs moving average calculation for an input signal to reduce a noise component included in the input signal and an infinite impulse response filter that reduces a noise component included in an input signal by digital signal processing. A filter coefficient of the infinite impulse response filter is determined on a basis of a difference between a first calculation result output by the moving-average calculating unit and a second calculation result output by the infinite impulse response filter when a same signal is input to the moving-average calculating unit and the infinite impulse response filter.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: October 29, 2019
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daiki Ata, Keiichi Yamada, Kazuhiko Nakamura
  • Publication number: 20190319153
    Abstract: An i-type layer is formed on a side of one surface of a crystalline semiconductor substrate. An n-type layer or a p-type layer is formed on the i-type layer and includes a conductive impurity. A TCO is formed on the n-type layer or the p-type layer. A density in a proximate portion of the n-type layer or the p-type layer closer to the TCO than a remote portion of the n-type layer or the p-type layer is smaller than a density in the remote portion.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 17, 2019
    Inventors: Daiki WATANABE, Hiroyuki YAMADA, Minato SENO, Akinori TSURUTA
  • Publication number: 20190265031
    Abstract: A signal processing device for performing processing for reducing noise in a displacement amount measured on a basis of light reflected from a detection object includes a moving-average calculating unit that performs moving average calculation for an input signal to reduce a noise component included in the input signal and an infinite impulse response filter that reduces a noise component included in an input signal by digital signal processing. A filter coefficient of the infinite impulse response filter is determined on a basis of a difference between a first calculation result output by the moving-average calculating unit and a second calculation result output by the infinite impulse response filter when a same signal is input to the moving-average calculating unit and the infinite impulse response filter.
    Type: Application
    Filed: September 15, 2017
    Publication date: August 29, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Daiki ATA, Keiichi YAMADA, Kazuhiko NAKAMURA
  • Publication number: 20190135069
    Abstract: A stabilizer bushing installed on a stabilizer bar is made of two divided parts of rubber or the like to prevent or decrease generation of a gap in a bonding surface. The stabilizer bushing installed on an outer periphery of the stabilizer bar by adhesion includes divided rubber bushings of an upper rubber bushing and a lower rubber bushing. Before adhesion, both end portions of the upper and lower rubber bushings, respectively, in a circumferential direction are tapered so that an overlapping amount between the upper and lower rubber bushings increases toward the outer periphery side of the bushings.
    Type: Application
    Filed: November 5, 2018
    Publication date: May 9, 2019
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, Sumitomo Riko Company Limited
    Inventors: Yuji HOMMA, Taisuke NISHIMURA, Masami ENDO, Norimasa KUKI, Daiki MIMPO, Ryusuke YAMADA
  • Patent number: 8999818
    Abstract: A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: April 7, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Hiroki Adachi, Shunpei Yamazaki
  • Patent number: 8928131
    Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: January 6, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Kyosuke Ito, Eiji Sugiyama, Yoshitaka Dozen
  • Patent number: 8648439
    Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: February 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshitaka Dozen, Tomoyuki Aoki, Hidekazu Takahashi, Daiki Yamada, Eiji Sugiyama, Kaori Ogita, Naoto Kusumoto
  • Publication number: 20130334611
    Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
    Type: Application
    Filed: August 7, 2013
    Publication date: December 19, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu TAKAHASHI, Daiki YAMADA, Kyosuke ITO, Eiji SUGIYAMA, Yoshitaka DOZEN
  • Patent number: 8610152
    Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: December 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Hiroki Adachi, Shunpei Yamazaki
  • Publication number: 20130228885
    Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.
    Type: Application
    Filed: April 18, 2013
    Publication date: September 5, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshitaka DOZEN, Tomoyuki AOKI, Hidekazu TAKAHASHI, Daiki YAMADA, Eiji SUGIYAMA, Kaori OGITA, Naoto KUSUMOTO
  • Patent number: 8508027
    Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: August 13, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Kyosuke Ito, Eiji Sugiyama, Yoshitaka Dozen
  • Patent number: 8507308
    Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
    Type: Grant
    Filed: September 24, 2011
    Date of Patent: August 13, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Takahiro Iguchi, Hiroki Adachi, Shunpei Yamazaki
  • Patent number: 8481370
    Abstract: The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
    Type: Grant
    Filed: August 3, 2006
    Date of Patent: July 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Naoto Kusumoto, Yuusuke Sugawara, Hidekazu Takahashi, Daiki Yamada, Yoshikazu Hiura
  • Patent number: 8432018
    Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: April 30, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshitaka Dozen, Tomoyuki Aoki, Hidekazu Takahashi, Daiki Yamada, Eiji Sugiyama, Kaori Ogita, Naoto Kusumoto