Patents by Inventor Daisuke Hiraiwa
Daisuke Hiraiwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8969905Abstract: A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).Type: GrantFiled: December 15, 2009Date of Patent: March 3, 2015Assignee: Toyoda Gosei Co., Ltd.Inventors: Takehiko Okabe, Daisuke Hiraiwa, Remi Ohba
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Patent number: 8884329Abstract: It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.Type: GrantFiled: April 19, 2012Date of Patent: November 11, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Takehiko Okabe, Daisuke Hiraiwa, Mamoru Kitsukawa
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Patent number: 8836086Abstract: Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions (23, 24) in the side surfaces (25, 26), the modified regions being formed by laser radiation; and a light emitting element (12), which is provided on the substrate front surface (10a) of the substrate (10). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.Type: GrantFiled: February 16, 2011Date of Patent: September 16, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Daisuke Hiraiwa, Takehiko Okabe
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Patent number: 8691602Abstract: In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed.Type: GrantFiled: April 16, 2012Date of Patent: April 8, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Daisuke Hiraiwa, Takehiko Okabe
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Patent number: 8569735Abstract: A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.Type: GrantFiled: June 16, 2009Date of Patent: October 29, 2013Assignee: Toyoda Gosei Co., Ltd.Inventors: Daisuke Hiraiwa, Takehiko Okabe, Remi Ohba, Munetaka Watanabe
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Group III nitride semiconductor light-emitting device and method of manufacturing the same, and lamp
Patent number: 8502254Abstract: Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15).Type: GrantFiled: March 5, 2010Date of Patent: August 6, 2013Assignee: Toyoda Gosei Co., Ltd.Inventors: Daisuke Hiraiwa, Hironao Shinohara -
Publication number: 20130037825Abstract: Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions (23, 24) in the side surfaces (25, 26), the modified regions being formed by laser radiation; and a light emitting element (12), which is provided on the substrate front surface (10a) of the substrate (10). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.Type: ApplicationFiled: February 16, 2011Publication date: February 14, 2013Applicant: SHOWA DENKO K.K.Inventors: Daisuke Hiraiwa, Takehiko Okabe
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Publication number: 20120267673Abstract: It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.Type: ApplicationFiled: April 19, 2012Publication date: October 25, 2012Applicant: SHOWA DENKO K.K.Inventors: Takehiko OKABE, Daisuke HIRAIWA, Mamoru KITSUKAWA
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Publication number: 20120261678Abstract: In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed.Type: ApplicationFiled: April 16, 2012Publication date: October 18, 2012Applicant: SHOWA DENKO K.K.Inventors: Daisuke HIRAIWA, Takehiko OKABE
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GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND LAMP
Publication number: 20120001220Abstract: Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15).Type: ApplicationFiled: March 5, 2010Publication date: January 5, 2012Applicant: Showa Denko K.K.Inventors: Daisuke Hiraiwa, Hironao Shinohara -
Publication number: 20110255294Abstract: A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).Type: ApplicationFiled: December 15, 2009Publication date: October 20, 2011Applicant: SHOWA DENKO K.K.Inventors: Takehiko Okabe, Daisuke Hiraiwa, Remi Ohba
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Publication number: 20110089401Abstract: A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.Type: ApplicationFiled: June 16, 2009Publication date: April 21, 2011Applicant: Showa Denko K.K.Inventors: Daisuke Hiraiwa, Takehiko Okabe, Remi Ohba, Munetaka Watanabe
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Publication number: 20110018022Abstract: A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.Type: ApplicationFiled: March 13, 2009Publication date: January 27, 2011Inventors: Takehiko Okabe, Daisuke Hiraiwa, Masato Nakata, Hisayuki Miki, Naoki Fukunaga, Hironao Shinohara