Patents by Inventor Daisuke Hiratsuka

Daisuke Hiratsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10310339
    Abstract: In a wall electrode liquid crystal display device, planar distribution of the wall structure and the electrode is optimized to improve a yield. A liquid crystal display device includes a plurality of pixels arranged in a matrix, each of the pixels having an insulator wall structure formed at a border of pixels, a wall electrode formed at a side surface of the wall structure of the border of the pixels, a source electrode which is continuous with the wall electrode and formed of a planar electrode extending in a planar direction, a first common electrode provided between source electrodes at both sides of the pixel to form a retentive capacitance, and a second common electrode provided between wall electrodes on both sides of the pixel. A slit which becomes a border of the wall electrodes of two adjacent pixels is disposed only on a top of the wall structure.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: June 4, 2019
    Assignee: Japan Display Inc.
    Inventors: Osamu Itou, Takato Hiratsuka, Masanao Yamamoto, Toshimasa Ishigaki, Daisuke Sonoda
  • Patent number: 10086478
    Abstract: According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: October 2, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Daisuke Hiratsuka, Tomohiro Iguchi, Masayuki Uchida
  • Publication number: 20170229415
    Abstract: In a method of manufacturing a semiconductor device of one embodiment, support members and a film which is formed of a paste containing metal particles and surrounds the support members are provided above a surface of a base. Then a semiconductor element is provided above the support members and the film. Subsequently, the film is sintered to join the base and the semiconductor element. The support members are formed of a metal which melts at a temperature equal to or below a sintering temperature of the metal particles contained in the paste. The support members support the semiconductor element after the semiconductor element is provided above the support members and the film.
    Type: Application
    Filed: February 8, 2017
    Publication date: August 10, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuchen HSU, Daisuke HIRATSUKA
  • Publication number: 20160090345
    Abstract: A method of producing a powder of fatty acid metal salt for forming ultrafine metal particles includes washing the fatty acid metal salt so that the amount of unreacted substance or by-product is 4.0 mol % or less when the fatty acid metal salt is formed; preparing a pressed cake by pressing the fatty acid metal salt; and drying the pressed cake so that the water content is 200 ppm or less. The powder has a property for deodorizing mercaptan smelling components and/or a property for inactivating microproteins.
    Type: Application
    Filed: December 8, 2015
    Publication date: March 31, 2016
    Applicant: TOYO SEIKAN KAISHA, LTD.
    Inventors: Kazuaki OHASHI, Kazuhiro SATO, Anzu KASAI, Daisuke HIRATSUKA, Shigeru SUZUKI
  • Patent number: 9202757
    Abstract: According to one embodiment, a semiconductor module includes: a first circuit component: a second circuit component; and a third circuit component. The first circuit component includes: an insulating first substrate; a first conductive layer; a first switching element; and a first diode. The second circuit component includes: an insulating second substrate; a second conductive layer; a second switching element; and a second diode. The second circuit component is disposed between the first circuit component and the third circuit component. The third circuit component includes: an insulating third substrate; a third conductive layer provided on the third substrate and including a third element mounting unit; a third switching element provided on the third element mounting unit; and a third diode provided on the third element mounting unit. A direction from the third switching element toward the third diode is an opposite direction to the first direction.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: December 1, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomohiro Iguchi, Masayuki Uchida, Daisuke Hiratsuka, Masako Fukumitsu
  • Publication number: 20150262959
    Abstract: A semiconductor device includes a substrate joined to a base by a first junction material and a semiconductor element joined to the substrate by a second junction material. At least one of the first and second junction materials comprises tin, antimony, and cobalt. In some embodiments, the junction materials comprise cobalt having a weight percentage between 0.05 wt % and 0.2 wt %, antimony with a weight percentage between 1 wt % and 10 wt %, and the balance being substantially tin.
    Type: Application
    Filed: September 2, 2014
    Publication date: September 17, 2015
    Inventors: Yuuji HISAZATO, Kazuya KODANI, Yo SASAKI, Daisuke HIRATSUKA, Hitoshi MATSUMURA, Hideaki KITAZAWA, Nobumitsu TADA, Hiroki SEKIYA
  • Publication number: 20150078414
    Abstract: According to one embodiment, in a method of testing a semiconductor device, the semiconductor device has a semiconductor element and a substrate which are bonded by bonding material including metal fine particles. Image data of a heat distribution in the semiconductor device are temporally acquired while heating the semiconductor device. A time change of a fractal dimension based on the image data is calculated. An inclination of the time change of the fractal dimension is calculated. The inclination and a reference inclination set in advance are compared. Whether or not the semiconductor device is good is determined.
    Type: Application
    Filed: March 3, 2014
    Publication date: March 19, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuuji Hisazato, Kazuya Kodani, Yo Sasaki, Daisuke Hiratsuka, Hitoshi Matsumura, Hideaki Kitazawa, Kenji Adachi
  • Publication number: 20150069638
    Abstract: According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.
    Type: Application
    Filed: July 22, 2014
    Publication date: March 12, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Daisuke HIRATSUKA, Tomohiro IGUCHI, Masayuki UCHIDA
  • Patent number: 8975732
    Abstract: According to one embodiment, a semiconductor device includes, a chip including a first chip electrode on a first surface on one side, and a second chip electrode on a second surface on the other side, an electrically conductive frame provided on a side periphery of the chip, a rewiring configured to electrically connect the second chip electrode and the electrically conductive frame on the other side of the chip, and an insulation side portion provided between the electrically conductive frame and the side periphery of the chip.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Tojo, Kazuhito Higuchi, Tomohiro Iguchi, Masako Fukumitsu, Daisuke Hiratsuka, Akihiro Sasaki, Masayuki Uchida
  • Patent number: 8957522
    Abstract: According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: February 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yo Sasaki, Daisuke Hiratsuka, Atsushi Yamamoto, Kazuya Kodani, Yuuji Hisazato, Hitoshi Matsumura
  • Patent number: 8944153
    Abstract: A fin for a heat exchanger of an air conditioning apparatus includes a base material, a hydrophilic layer, and a corrosion-resistant layer provided between the base material and the hydrophilic layer. A contact angle of a surface of the hydrophilic layer with water is no more than 50 degrees. A water content of the hydrophilic layer per dm2 of the surface of the hydrophilic layer being at least 60 mg/dm2 and no more than 300 mg/dm2.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: February 3, 2015
    Assignee: Daikin Industries, Ltd.
    Inventors: Takuya Kazusa, Kanji Akai, Daisuke Hiratsuka, Kiyoshi Yamakawa, Yasuhiro Ohkura, Yoshiyuki Matsumoto, Kenji Terano, Masami Suga
  • Patent number: 8916634
    Abstract: A master batch for use in forming ultrafine metal particles serving as an adsorptive material, a method of producing the same, and a method of molding an article containing ultrafine metal particles by using the master batch. The master batch comprises a thermoplastic resin and a metal organoate contained therein, the metal of the metal organoate being selected from the group consisting of Cu, Ag, Au, In, Pd, Pt, Fe, Ni, Co, Zn, Nb, Sn, Ru and Rh. Adsorption performance is not expressed by the master batch but is expressed by an article molded by blending the resin with the master batch.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: December 23, 2014
    Assignee: Toyo Seikan Kaisha, Ltd.
    Inventors: Kazuaki Ohashi, Anzu Kasai, Daisuke Hiratsuka
  • Publication number: 20140264435
    Abstract: According to one embodiment, a semiconductor module includes: a first circuit component: a second circuit component; and a third circuit component. The first circuit component includes: an insulating first substrate; a first conductive layer; a first switching element; and a first diode. The second circuit component includes: an insulating second substrate; a second conductive layer; a second switching element; and a second diode. The second circuit component is disposed between the first circuit component and the third circuit component. The third circuit component includes: an insulating third substrate; a third conductive layer provided on the third substrate and including a third element mounting unit; a third switching element provided on the third element mounting unit; and a third diode provided on the third element mounting unit. A direction from the third switching element toward the third diode is an opposite direction to the first direction.
    Type: Application
    Filed: September 16, 2013
    Publication date: September 18, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomohiro IGUCHI, Masayuki Uchida, Daisuke Hiratsuka, Masako Fukumitsu
  • Publication number: 20140083657
    Abstract: A fin for a heat exchanger of an air conditioning apparatus includes a base material, a hydrophilic layer, and a corrosion-resistant layer provided between the base material and the hydrophilic layer. A contact angle of a surface of the hydrophilic layer with water is no more than 50 degrees. A water content of the hydrophilic layer per dm2 of the surface of the hydrophilic layer being at least 60 mg/dm2 and no more than 300 mg/dm2.
    Type: Application
    Filed: April 12, 2012
    Publication date: March 27, 2014
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takuya Kazusa, Kanji Akai, Daisuke Hiratsuka, Kiyoshi Yamakawa, Yasuhiro Ohkura, Yoshiyuki Matsumoto, Kenji Terano, Masami Suga
  • Publication number: 20140077377
    Abstract: According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.
    Type: Application
    Filed: March 6, 2013
    Publication date: March 20, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yo SASAKI, Daisuke HIRATSUKA, Atsushi YAMAMOTO, Kazuya KODANI, Yuuji HISAZATO, Hitoshi MATSUMURA
  • Patent number: 8637427
    Abstract: An adsorptive composition comprising a composition that contains at least one kind of fatty acid metal salt of any one of Ni, Cu or Co and ultrafine metal particles having a plasmon absorption over 300 to 700 nm. The adsorptive composition has an excellent effect of adsorbing both amine-type smelling components and sulfur-containing smelling components.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: January 28, 2014
    Assignee: Toyo Seikan Kaisha, Ltd.
    Inventors: Kazuaki Ohashi, Anzu Kasai, Daisuke Hiratsuka, Shigeru Suzuki
  • Publication number: 20130241040
    Abstract: According to one embodiment, a semiconductor device includes, a chip including a first chip electrode on a first surface on one side, and a second chip electrode on a second surface on the other side, an electrically conductive frame provided on a side periphery of the chip, a rewiring configured to electrically connect the second chip electrode and the electrically conductive frame on the other side of the chip, and an insulation side portion provided between the electrically conductive frame and the side periphery of the chip.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 19, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akira Tojo, Kazuhito Higuchi, Tomohiro Iguchi, Masako Fukumitsu, Daisuke Hiratsuka, Akihiro Sasaki, Masayuki Uchida
  • Publication number: 20110028313
    Abstract: An adsorptive composition comprising a composition that contains at least one kind of fatty acid metal salt of any one of Ni, Cu or Co and ultrafine metal particles having a plasmon absorption over 300 to 700 nm. The adsorptive composition has an excellent effect of adsorbing both amine-type smelling components and sulfur-containing smelling components.
    Type: Application
    Filed: February 26, 2009
    Publication date: February 3, 2011
    Applicant: TOYO SEIKAN KAISHA, LTD.
    Inventors: Kazuaki Ohashi, Anzu Kasai, Daisuke Hiratsuka, Shigeru Suzuki
  • Publication number: 20110003924
    Abstract: A master batch for use in forming ultrafine metal particles serving as an adsorptive material, a method of producing the same, and a method of molding an article containing ultrafine metal particles by using the master batch. The master batch comprises a thermoplastic resin and a metal organoate contained therein, the metal of the metal organoate being selected from the group consisting of Cu, Ag, Au, In, Pd, Pt, Fe, Ni, Co, Zn, Nb, Sn, Ru and Rh. Adsorption performance is not expressed by the master batch but is expressed by an article molded by blending the resin with the master batch.
    Type: Application
    Filed: February 26, 2009
    Publication date: January 6, 2011
    Applicant: TOYO SEIKAN KAISHA, LTD.
    Inventors: Kazuaki Ohashi, Anzu Kasai, Daisuke Hiratsuka
  • Publication number: 20110002872
    Abstract: A fatty acid metal salt used for forming ultrafine metal particles satisfying at least one of that: (i) the water content is 200 ppm or less; (ii) the volume-cumulative particle diameter D90 is 80 ?m or smaller as measured by the particle size distribution measuring method of the laser diffraction/scattering type; or (iii) a metal of an atomic weight of 50 to 200 is contained, and the amount of the unreacted substance or the by-product is 4.0 mol % or less when the fatty acid metal salt is formed. The fatty acid metal salt can be favorably used for forming ultrafine metal particles in a resin, or for forming a resin composition, a coating, a dispersion solution or a molded article containing the ultrafine metal particles.
    Type: Application
    Filed: February 26, 2009
    Publication date: January 6, 2011
    Applicant: TOYO SEIKAN KAISHA, LTD.
    Inventors: Kazuaki Ohashi, Kazuhiro Sato, Anzu Kasai, Daisuke Hiratsuka, Shigeru Suzuki