Abstract: A memory system includes a first memory that is nonvolatile, a second memory that is volatile, and a memory controller. The memory controller is configured to store first information in the second memory. The first information includes management information. The memory controller is further configured to compress the first information. The compressed first information is second information. The memory controller is configured to store the second information in the first memory.

Abstract: A memory device can be connected to a host through an interface. The memory device includes a nonvolatile memory which includes a plurality of blocks, and a controller which is electrically connected to the nonvolatile memory. In a case where a read command is received from the host, the controller reads first data designated by the read command from a first block of the nonvolatile memory, to transmit the first data to the host, and to write the first data to a second block of the nonvolatile memory instead of the first block.

Abstract: According to one embodiment, an electronic device connectable to a host via an interface includes a nonvolatile memory and a controller electrically connected to the nonvolatile memory and capable of processing commands issued by the host in parallel. When the electronic device is connected to the host, the controller determines, when one or more commands to be processed by one or more deadline times, respectively, are issued by the host, scheduling indicative of timings at which the one or more commands are processed, respectively, based on the one or more deadline times. The controller performs processing corresponding to the one or more commands in accordance with the scheduling.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory including a plurality of blocks, and a controller. The controller receives from the host information indicative of the total number of processes running on the host. The controller executes processing of moving data stored in at least one block of the nonvolatile memory to at least one block of the other blocks of the nonvolatile memory, after determining that the total number of processes exceeds a first threshold value.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a controller. The nonvolatile memory cannot overwrite data written in a memory area. The controller controls writing/reading of data to/from the nonvolatile memory in response to a request from a host device. The controller includes a garbage collection processor and a garbage collection controller. The garbage collection processor executes garbage collection to reuse a memory area on the nonvolatile memory in which unnecessary data remain. The garbage collection controller stops the garbage collection executed by the garbage collection processor when the storage device is in a loaded state equal to or less than a threshold value.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a controller. The nonvolatile memory cannot overwrite data written in a memory area. The controller controls writing/reading of data to/from the nonvolatile memory in response to a request from a host device. The controller includes a garbage collection processor and a garbage collection controller. The garbage collection processor executes garbage collection to reuse a memory area on the nonvolatile memory in which unnecessary data remain. The garbage collection controller stops the garbage collection executed by the garbage collection processor when the storage device is in a loaded state equal to or less than a threshold value.

Abstract: According to one embodiment, an electronic device includes a nonvolatile memory that includes blocks and a controller. The controller transmits information to the host. The information indicates a first logical address range corresponding to cold data stored in the nonvolatile memory, and a processing amount for turning a cold block that comprises the cold data into a block to which data is writable. The controller reads the cold data from the nonvolatile memory in accordance with a read command that is received from the host and designates the first logical address range, and transmits the read cold data to the host. The controller writes, to the nonvolatile memory, the cold data that is received with a write command designating the first logical address range from the host.

Abstract: According to one embodiment, a storage device is accessible by an external device via an interface and includes a nonvolatile memory including one or more blocks, and a controller electrically connected to the nonvolatile memory. The controller receives from the external device a request and a notification indicating that a response performance of the request is to be lowered. In response to receiving the request and notification, the controller determines a response time longer than a processing time of the request, and executes a first performance lowering process that executes a block managing process of the nonvolatile memory by using an idle time which is a difference between the response time and the processing time of the request or executes a second performance lowering process that lowers the response performance so as to process the request by spending the response time.

Abstract: According to one embodiment, an electronic device includes a nonvolatile memory that includes blocks and a controller. The controller transmits information to the host. The information indicates a first logical address range corresponding to cold data stored in the nonvolatile memory, and a processing amount for turning a cold block that comprises the cold data into a block to which data is writable. The controller reads the cold data from the nonvolatile memory in accordance with a read command that is received from the host and designates the first logical address range, and transmits the read cold data to the host. The controller writes, to the nonvolatile memory, the cold data that is received with a write command designating the first logical address range from the host.

Abstract: A multilayer ceramic capacitor includes: a multilayer chip in which each of dielectric layers and each of internal electrode layers are alternately stacked and the internal electrode layers are alternately exposed to two end faces; and external electrodes formed on the two end faces; wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer including Mo; and “M?0.003185×(Ew×Et)?0.5921 is satisfied when “Et” is a height from a bottom one of the internal electrode layers to a top one of the internal electrode layers, “Ew” is a width of the internal electrode layers in a direction in which side faces of the multilayer chip face with each other, and “M” is a Mo concentration (atm %) with respect to a main component ceramic of a total of the multilayer chip and the pair of external electrodes.

Abstract: A defect classification method in accordance with the present invention uses two types of images output from the defect inspection device 150 (i.e., the first inspection image generated from a luminance signal sequentially output from a detector SE and the second inspection image generated from a difference of the signals from an adjacent portion in a region where the defect exists). The first inspection image includes information for discriminating unevenness of the defective shape. Also, while it is difficult to discriminate unevenness of the defective shape by the second inspection image, the second inspection image includes information on a luminance distribution emphasizing a defective section. The region of the defective section is extracted from the second inspection image to be applied to the first inspection image and thereby define an arithmetic processing area, and the image processing is performed within the arithmetic processing area to compute a feature amount.

Abstract: A defect classification method in accordance with the present invention uses two types of images output from the defect inspection device 150 (i.e., the first inspection image generated from a luminance signal sequentially output from a detector SE and the second inspection image generated from a difference of the signals from an adjacent portion in a region where the defect exists). The first inspection image includes information for discriminating unevenness of the defective shape. Also, while it is difficult to discriminate unevenness of the defective shape by the second inspection image, the second inspection image includes information on a luminance distribution emphasizing a defective section. The region of the defective section is extracted from the second inspection image to be applied to the first inspection image and thereby define an arithmetic processing area, and the image processing is performed within the arithmetic processing area to compute a feature amount.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a controller. The nonvolatile memory cannot overwrite data written in a memory area. The controller controls writing/reading of data to/from the nonvolatile memory in response to a request from a host device. The controller includes a garbage collection processor and a garbage collection controller. The garbage collection processor executes garbage collection to reuse a memory area on the nonvolatile memory in which unnecessary data remain. The garbage collection controller stops the garbage collection executed by the garbage collection processor when the storage device is in a loaded state equal to or less than a threshold value.

Abstract: A memory device can be connected to a host through an interface. The memory device includes a nonvolatile memory which includes a plurality of blocks, and a controller which is electrically connected to the nonvolatile memory. In a case where a read command is received from the host, the controller reads first data designated by the read command from a first block of the nonvolatile memory, to transmit the first data to the host, and to write the first data to a second block of the nonvolatile memory instead of the first block.

Abstract: According to one embodiment, an electronic device connectable to a host via an interface includes a nonvolatile memory and a controller electrically connected to the nonvolatile memory and capable of processing commands issued by the host in parallel. When the electronic device is connected to the host, the controller determines, when one or more commands to be processed by one or more deadline times, respectively, are issued by the host, scheduling indicative of timings at which the one or more commands are processed, respectively, based on the one or more deadline times. The controller performs processing corresponding to the one or more commands in accordance with the scheduling.

Abstract: According to one embodiment, an electronic device includes a nonvolatile memory that includes blocks and a controller. The controller transmits information to the host. The information indicates a first logical address range corresponding to cold data stored in the nonvolatile memory, and a processing amount for turning a cold block that comprises the cold data into a block to which data is writable. The controller reads the cold data from the nonvolatile memory in accordance with a read command that is received from the host and designates the first logical address range, and transmits the read cold data to the host. The controller writes, to the nonvolatile memory, the cold data that is received with a write command designating the first logical address range from the host.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory including a plurality of blocks, and a controller. The controller receives from the host information indicative of the total number of processes running on the host. The controller executes processing of moving data stored in at least one block of the nonvolatile memory to at least one block of the other blocks of the nonvolatile memory, after determining that the total number of processes exceeds a first threshold value.

Abstract: A multilayer ceramic capacitor includes: a ceramic multilayer structure having a structure in which each of ceramic dielectric layers and each of internal electrode layers are alternately stacked and are alternately exposed to two edge faces of the ceramic multilayer structure, a main phase of the plurality of ceramic dielectric layers having a perovskite structure that includes Ca and Zr and is expressed by a general formula ABO3; and a pair of external electrodes that are formed on the two edge faces, wherein 300×TE/TA?12?30 is satisfied when a volume TA is a length CL×a width CW×a thickness CT of the ceramic multilayer structure and a volume TE is a length EL×a width EW×a thickness ET×a stacked number of the plurality of internal electrode layers in a capacity region.

Abstract: A photomask blank having a thin film on a transparent substrate is inspected for defects by irradiating inspection light to a surface region of the blank, collecting the reflected light from the irradiated region via an inspection optical system to form a magnified image of the region, extracting a feature parameter of light intensity distribution from the magnified image, and identifying the bump/pit shape of the defect based on the feature parameter combined with the structure of the thin film. The defect inspection method is effective for discriminating defects of bump or pit shape in a highly reliable manner. On application of the defect inspection method, photomask blanks having no pinhole defects are available at lower costs and higher yields.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory storing first data, and a device controller which is capable of storing all or a part of the first data stored in the nonvolatile memory as second data to a memory area in a host. The device controller which is configured to calculate a first hash value of the second data stored in the memory area in a first timing, calculate a second hash value of the second data stored in the memory area in a second timing, and detect whether the second data stored in the memory area is tampered between the first and second timings by comparing the second hash value with the first hash value.