Patents by Inventor Daisuke Matsubayashi

Daisuke Matsubayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10134911
    Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: November 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiyuki Kobayashi, Shinpei Matsuda, Daisuke Matsubayashi, Hiroyuki Tomisu
  • Publication number: 20180294363
    Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
    Type: Application
    Filed: June 8, 2018
    Publication date: October 11, 2018
    Inventors: Junichi KOEZUKA, Yukinori SHIMA, Hajime TOKUNAGA, Toshinari SASAKI, Keisuke MURAYAMA, Daisuke MATSUBAYASHI
  • Patent number: 10079238
    Abstract: A memory device that is as small in area as possible and has an extremely long data retention period. A transistor with extremely low leakage current is used as a cell transistor of a memory element in a memory device. Moreover, in order to reduce the area of a memory cell, the transistor is formed so that its source and drain are stacked in the vertical direction in a region where a bit line and a word line intersect each other. Further, a capacitor is stacked above the transistor.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: September 18, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Daisuke Matsubayashi
  • Patent number: 10074748
    Abstract: A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is TS1 and the thickness of the second region is TG1, TS1?TG1.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 11, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Matsubayashi, Satoshi Shinohara, Wataru Sekine
  • Patent number: 10068906
    Abstract: The semiconductor device of the present invention comprises first and second transistors and first and second capacitors. One of source and drain electrodes of the first transistor is electrically connected to a first wiring, the other is electrically connected to a second wiring, and a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor. The other of the source and drain electrodes of the second transistor is electrically connected to the first wiring, and a gate electrode of the second transistor is electrically connected to one of electrodes of a second capacitor and a fifth wiring. The other electrode of the first capacitor is electrically connected to a third wiring, and the other electrode of the second capacitor is eclectically connected to a fourth wiring.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: September 4, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Daisuke Matsubayashi
  • Patent number: 10056475
    Abstract: A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: August 21, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Daisuke Matsubayashi
  • Publication number: 20180233588
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Application
    Filed: April 9, 2018
    Publication date: August 16, 2018
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Patent number: 10032428
    Abstract: To prevent an influence of normally-on characteristics of the transistor which a clock signal is input to a terminal of, a wiring to which a first low power supply potential is applied and a wiring to which a second low power supply potential lower than the first low power supply potential is applied are electrically connected to a gate electrode of the transistor. A semiconductor device including the transistor can operate stably.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: July 24, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Daisuke Matsubayashi
  • Patent number: 10032918
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: July 24, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Daisuke Matsubayashi, Ryo Tokumaru, Yasumasa Yamane, Kiyofumi Ogino, Taichi Endo, Hajime Kimura
  • Publication number: 20180197997
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Application
    Filed: January 8, 2018
    Publication date: July 12, 2018
    Inventors: Daigo ITO, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
  • Publication number: 20180190827
    Abstract: A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited over the first insulating layer. A second oxide insulating layer is deposited over the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited over the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A sidewall insulating layer including a region in contact with a side surface of the gate electrode layer is formed. A second conductive layer is deposited over the gate electrode layer, the sidewall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited over the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment.
    Type: Application
    Filed: February 28, 2018
    Publication date: July 5, 2018
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yutaka OKAZAKI, Daisuke MATSUBAYASHI, Yuichi SATO
  • Publication number: 20180166392
    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator over the first conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the first conductor, and a side surface of the third insulator; a fifth insulator in contact with a top surface of the oxide and a side surface of the fourth insulator; and a second conductor in contact with the top surface of the oxide and the fifth insulator. The level of the top surface of the fourth insulator is higher than the level of the top surface of the fifth insulator.
    Type: Application
    Filed: November 29, 2017
    Publication date: June 14, 2018
    Inventors: Shunpei YAMAZAKI, Daisuke MATSUBAYASHI
  • Patent number: 9997639
    Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: June 12, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Yukinori Shima, Hajime Tokunaga, Toshinari Sasaki, Keisuke Murayama, Daisuke Matsubayashi
  • Patent number: 9972718
    Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: May 15, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Yukinori Shima, Hajime Tokunaga, Toshinari Sasaki, Keisuke Murayama, Daisuke Matsubayashi
  • Publication number: 20180122560
    Abstract: A multilayer inductor includes a stack including a coil spirally wound and overlapped in a stacking direction in a magnetic body, an electrode provided on a bottom surface of the stack, a connecting conductor that passes through the stack toward the bottom surface from one end of the coil to the electrode to connect the end of the coil with the electrode, and a nonmagnetic part that surrounds the connecting conductor.
    Type: Application
    Filed: January 2, 2018
    Publication date: May 3, 2018
    Applicant: FDK CORPORATION
    Inventors: Kenji OKUDA, Daisuke Matsubayashi, Mikio Kitaoka, Shohei Itagaki
  • Patent number: 9947777
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: April 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Patent number: 9941309
    Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: April 10, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Hideaki Shishido, Jun Koyama, Daisuke Matsubayashi, Keisuke Murayama
  • Patent number: 9939692
    Abstract: The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: April 10, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Kouhei Toyotaka, Masahiko Hayakawa, Daisuke Matsubayashi, Shinpei Matsuda
  • Publication number: 20180076204
    Abstract: A memory device that is as small in area as possible and has an extremely long data retention period. A transistor with extremely low leakage current is used as a cell transistor of a memory element in a memory device. Moreover, in order to reduce the area of a memory cell, the transistor is formed so that its source and drain are stacked in the vertical direction in a region where a bit line and a word line intersect each other. Further, a capacitor is stacked above the transistor.
    Type: Application
    Filed: November 6, 2017
    Publication date: March 15, 2018
    Inventor: Daisuke MATSUBAYASHI
  • Patent number: 9911861
    Abstract: A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited over the first insulating layer. A second oxide insulating layer is deposited over the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited over the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A sidewall insulating layer including a region in contact with a side surface of the gate electrode layer is formed. A second conductive layer is deposited over the gate electrode layer, the sidewall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited over the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yutaka Okazaki, Daisuke Matsubayashi, Yuichi Sato