Abstract: An electrophotographic photosensitive member having excellent electrophotographic properties while being prevented from the generation of blade turn-up, a method of manufacturing the electrophotographic photosensitive member, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member are provided. The surface layer of the electrophotographic photosensitive member contains a polymer having a specific repeating structural unit.

Abstract: Provided is a solubility-controallable compound being soluble in a solvent due to a solvent-philic group thereof, of which solubility in the solvent is irreversibly lowered when the group is removed by retro-Diels-Alder reaction.

Abstract: A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: There is provided a method for producing a field effect transistor with a high field-effect mobility using a simple method for forming an organic semiconductor layer. A method for producing an organic field effect transistor comprising an organic semiconductor layer, comprising a step of forming the organic semiconductor layer by the photodecomposition of a bicyclic compound containing in a molecule thereof at least one bicyclic ring represented by formula (1): wherein R1 and R3 each denotes a group for forming an aromatic ring or a heteroaromatic ring which may have a substituent, together with a group to be bonded to R1 or R3; R2 and R4 each denotes a hydrogen atom, an alkyl group, an alkoxy group, an ester group or a phenyl group; and X is a leaving group which denotes carbonyl group or —N?.

Abstract: A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

Abstract: An electrophotographic photosensitive member having excellent electrophotographic properties while being prevented from the generation of blade turn-up, a method of manufacturing the electrophotographic photosensitive member, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member are provided. The surface layer of the electrophotographic photosensitive member contains a polymer having a specific repeating structural unit.

Abstract: In an electrophotographic photosensitive member having a support, a conductive layer formed on the support, an intermediate layer formed on the conductive layer, and a photosensitive layer formed on the intermediate layer, the conductive layer has been formed by using a conductive layer coating fluid which contains TiO2 particles coated with oxygen deficient SnO2 having an average particle diameter of from 0.20 ?m or more to 0.60 ?m or less, and has a volume resistivity of from more than 8.0×108 ?cm to 1.0×1011 ?cm or less. The electrophotographic photosensitive member can keep charging lines from occurring.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2?) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2?) range of 23.0° to 26.0° in X-ray diffraction using CuK? radiation.

Abstract: A substrate is provided which comprises an organic resin layer on a base material, wherein the base material has an average surface roughness of not less than 1.2 nm but no more than 5 nm and a maximum height of a surface unevenness of not less than 0.1 ?m but no more than 1.0 ?m; the organic resin layer has an average surface roughness of not more than 1 nm and a maximum peak height of a surface unevenness of not more than 30 nm; and at least a part of a surface of the organic resin layer comprises a hydrophilic region.

Abstract: A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: An electrophotographic photosensitive member having excellent electrophotographic properties while being prevented from the generation of blade turn-up, a method of manufacturing the electrophotographic photosensitive member, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member are provided. The surface layer of the electrophotographic photosensitive member contains a polymer having a specific repeating structural unit.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.).

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: Provided is a solubility-controllable compound being soluble in a solvent due to a solvent-philic group thereof, of which solubility in the solvent is irreversibly lowered when the group is removed by retro-Diels-Alder reaction.

Abstract: A method for forming an organic semiconductor film, comprising applying to a base material a bicyclo compound and inducing a retro-Diels-Alder reaction in the bicyclo compound.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.