Patents by Inventor Daisuke OYAMATSU
Daisuke OYAMATSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210040385Abstract: Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M1, M2, and Z, M1 containing at least one selected from the group consisting of Ag, Cu, and Au, M2 containing at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.Type: ApplicationFiled: February 15, 2019Publication date: February 11, 2021Applicants: OSAKA UNIVERSITY, National University Corporation Tokai National Higher Education and Research System, NICHIA CORPORATIONInventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU
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Patent number: 10870797Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.Type: GrantFiled: December 17, 2019Date of Patent: December 22, 2020Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
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Publication number: 20200308483Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.Type: ApplicationFiled: June 14, 2020Publication date: October 1, 2020Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Akihiro FUKATSU, Daisuke OYAMATSU
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Publication number: 20200295227Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.Type: ApplicationFiled: March 11, 2020Publication date: September 17, 2020Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Yuki MORI, Hiroki YAMAUCHI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
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Patent number: 10717925Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.Type: GrantFiled: January 29, 2019Date of Patent: July 21, 2020Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa Torimoto, Tatsuya Kameyama, Akihiro Fukatsu, Daisuke Oyamatsu
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Publication number: 20200140750Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.Type: ApplicationFiled: December 17, 2019Publication date: May 7, 2020Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
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Publication number: 20200140752Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.Type: ApplicationFiled: January 2, 2020Publication date: May 7, 2020Applicants: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU, Kenta NIKI
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Publication number: 20200140751Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.Type: ApplicationFiled: December 17, 2019Publication date: May 7, 2020Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
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Patent number: 10563122Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.Type: GrantFiled: March 15, 2017Date of Patent: February 18, 2020Assignees: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Susumu Kuwabata, Taro Uematsu, Kazutaka Wajima, Tsukasa Torimoto, Tatsuya Kameyama, Daisuke Oyamatsu, Kenta Niki
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Patent number: 10550322Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.Type: GrantFiled: September 5, 2017Date of Patent: February 4, 2020Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
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Publication number: 20200006601Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.Type: ApplicationFiled: February 28, 2018Publication date: January 2, 2020Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Chie MIYAMAE, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU, Kenta NIKI
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Publication number: 20190345384Abstract: A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200° C. to 370° C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.Type: ApplicationFiled: May 9, 2019Publication date: November 14, 2019Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Hiroki YAMAUCHI, Chie MIYAMAE, Yuki MORI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
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Publication number: 20190153310Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.Type: ApplicationFiled: January 29, 2019Publication date: May 23, 2019Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Akihiro FUKATSU, Daisuke OYAMATSU
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Patent number: 10233389Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.Type: GrantFiled: July 21, 2016Date of Patent: March 19, 2019Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa Torimoto, Tatsuya Kameyama, Akihiro Fukatsu, Daisuke Oyamatsu
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Patent number: 10081764Abstract: Tellurium compound nanoparticles, including: an element M1 where M1 is at least one element selected from Cu, Ag, and Au; an element M2 where M2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M3 where M3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.Type: GrantFiled: July 1, 2016Date of Patent: September 25, 2018Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa Torimoto, Tatsuya Kameyama, Yujiro Ishigami, Kouta Sugiura, Daisuke Oyamatsu
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Publication number: 20180066183Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.Type: ApplicationFiled: September 5, 2017Publication date: March 8, 2018Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, OSAKA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
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Patent number: 9835310Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.Type: GrantFiled: January 6, 2015Date of Patent: December 5, 2017Assignee: NICHIA CORPORATIONInventors: Hiroto Tamaki, Takayoshi Wakaki, Tadao Hayashi, Yoshiki Sato, Daisuke Oyamatsu, Takafumi Sugiyama, Takao Kosugi
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Publication number: 20170267924Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.Type: ApplicationFiled: March 15, 2017Publication date: September 21, 2017Applicants: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU, Kenta NIKI
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Publication number: 20170022413Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.Type: ApplicationFiled: July 21, 2016Publication date: January 26, 2017Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Akihiro FUKATSU, Daisuke OYAMATSU
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Publication number: 20170002265Abstract: Tellurium compound nanoparticles, including: an element M1 where M1 is at least one element selected from Cu, Ag, and Au; an element M2 where M2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M3 where M3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.Type: ApplicationFiled: July 1, 2016Publication date: January 5, 2017Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, NICHIA CORPORATIONInventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Yujiro ISHIGAMI, Kouta SUGIURA, Daisuke OYAMATSU