Patents by Inventor Daisuke WASHIO

Daisuke WASHIO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12113089
    Abstract: To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: October 8, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Daisuke Washio, Masahiko Tsujita, Hidenori Maeda
  • Publication number: 20240332337
    Abstract: To prevent leakage of incident light from pixels around a pixel region of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel. In the pixel region, a plurality of pixels is arranged, the plurality of pixels including a photodiode formed on a semiconductor substrate in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens that focuses the incident light on the photodiode, and a wiring region having a wiring layer connected to the photodiode and an insulating layer that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens having a curvature different from a curvature of the on-chip lens, and the wiring region.
    Type: Application
    Filed: June 11, 2024
    Publication date: October 3, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Daisuke WASHIO, Masahiko TSUJITA, Hidenori MAEDA
  • Patent number: 11933644
    Abstract: A touch detecting apparatus includes an electrostatic sensor provided on an object; and a processor configured to detect whether a hand touches the object based on a capacitance measured by the electrostatic sensor. The processor is configured to, in response to the capacitance being greater than or equal to a first touch threshold, detect that the hand touches the object, and, for a second predetermined time from when a change amount of the capacitance during a first predetermined time becomes greater than or equal to a noise threshold, continue a state where a correction value has been added to the first touch threshold.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: March 19, 2024
    Assignee: ALPS ALPINE CO., LTD.
    Inventors: Shinichi Endo, Hiroki Nagakusa, Ryo Komatsu, Sho Taguchi, Daisuke Washio
  • Publication number: 20230013855
    Abstract: A touch detecting apparatus includes an electrostatic sensor provided at an object; and a processor configured to detect whether a hand touches the object based on a capacitance measured by the electrostatic sensor. The processor is configured to, in response to the capacitance being greater than or equal to a first touch threshold, detect that the hand touches the object, and, for a second predetermined time from when a change amount of the capacitance during a first predetermined time becomes greater than or equal to a noise threshold, continue a state where a correction value has been added to the first touch threshold.
    Type: Application
    Filed: June 27, 2022
    Publication date: January 19, 2023
    Inventors: Shinichi ENDO, Hiroki NAGAKUSA, Ryo KOMATSU, Sho TAGUCHI, Daisuke WASHIO
  • Publication number: 20220399390
    Abstract: To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.
    Type: Application
    Filed: April 6, 2020
    Publication date: December 15, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Daisuke WASHIO, Masahiko TSUJITA, Hidenori MAEDA