Abstract: An electromechanical microsystem including an electromechanical transducer, a deformable diaphragm and a cavity hermetically containing a deformable medium keeping a constant volume under the action of an external pressure change. The deformable diaphragm forms a wall of the cavity and has at least one free area so as to be elastically deformed. The electromechanical transducer is configured so that its movement depends on the change in the external pressure, and vice versa. The free area cooperates with an external member so that its deformation induces, or is induced by, a movement of the external member. Thus, the electromechanical microsystem is adapted to displace the external member or to detect a movement of this member, the electromechanical microsystem includes at least one pin, configured to bear on a peripheral portion of the free area so that a deformation of the free rea causes an inclination of the pin.

Abstract: An electromechanical microsystem including an electromechanical transducer, a deformable diaphragm, a first cavity hermetically containing a deformable medium keeping a substantially constant volume under the action of an external pressure change and a second cavity. The deformable diaphragm forms a wall of the cavity and has at least one area freely deformable elastically. The free area also forms a wall of the second cavity. The electromechanical transducer is configured so that its movement depends on the external pressure change, and vice versa. A change in the external pressure in the first cavity induces a variation of the volume of the second cavity, or vice versa. Thus, the proposed electromechanical microsystem enables gripping of an object obstructing the opening of the second cavity and forms a microbarometer capable of converting at least one ambient pressure change into an electrical signal.

Abstract: An electromechanical microsystem including two electromechanical transducers, a first deformable diaphragm and a cavity hermetically containing a deformable medium keeping a constant volume under the action of a change in the external pressure. The first diaphragm forms at least one portion of a first wall of the cavity and has a freely deformable area. The free area cooperates with an external member so that its deformation induces, or is induced by, a movement of the external member. The electromechanical transducers are configured so that a first electromechanical transducer forms a portion of the first wall of the cavity, and a second electromechanical transducer forms at least one portion of the wall opposite to the first wall of the cavity.

Abstract: The invention relates to an electromechanical microsystem 1 including at least two electromechanical transducers 11 a and 11 b, a deformable diaphragm 12 and a cavity 13 hermetically containing a deformable medium 14 maintaining a constant volume under the action of an external pressure change. The deformable diaphragm forms a cavity wall and has at least one elastically deformable free area 121. The electromechanical transducers are configured so that their movement is a function of the said external pressure change, and vice versa, and so that two of them have opposing movements relative to each other. The free area cooperates with an external member 2 so that its deformation causes, or is caused by, a movement of the external member. The electromechanical microsystem is thus able to move the external member and/or sense a movement of this member, alternately towards the inside or outside of the cavity.

Abstract: The invention relates to an electromechanical microsystem 1 including at least two electromechanical transducers 11 and 11a, a deformable diaphragm 12 and a cavity 13 hermetically containing a deformable medium 14 maintaining a constant volume under the action of an external pressure change. The deformable diaphragm forms a cavity wall and has at least one deformable free area 121. The electromechanical transducers are configured so that their movement is a function of the said external pressure change, and conversely, and be in the same direction for at least two of them. The electromechanical microsystem 1 is thus able to deform the free area of the diaphragm in step mode towards the inside or outside of the cavity.

Abstract: An RF switch provided with a first region based on a phase change material disposed between a first conductive element and a second conductive element and state control means for said first region, the switch being further provided with at least one first decoupling switch provided with a second region of phase change material.

Abstract: A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed. Several separated portions of metallic material are provided such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes. At least one diffusion barrier layer including at least one non-metallic material is arranged on the cap layer and forms a diffusion barrier against an atmosphere outside the cavity at least around the release holes. Parts of the diffusion barrier layer are not covered by the portions of metallic material.

Abstract: Selector switch provided with: a structure based on at least one phase change material placed between a first conducting element and a second conducting element, the phase change material being capable of changing state, means of heating the phase change material provided with at least one first heating electrode and at least one other heating electrode, the structure based on a phase change material being configured to form a confined active zone of the phase change material at a distance from the conducting elements.

Abstract: Method for making a cavity, comprising steps to: make a hole in a cover covering a sacrificial portion on a substrate; make a first layer on the cover, either in a first configuration covering a first region of the cover around the hole, or in a second configuration surrounding a first region of the cover around the hole; deposit a second layer covering the cover and the first layer and with, in a first configuration a low adhesion force between the first and second layers, or in a second configuration a low adhesion force between the second layer and the first region; etch the second layer, forming a flap of which a first part does not hermetically close or seal the hole, and of which a second end is fixed to a second region of the cover; etch the sacrificial portion; close the cavity.

Abstract: An RF switch provided with a first region based on a phase change material disposed between a first conductive element and a second conductive element and state control means for said first region, the switch being further provided with at least one first decoupling switch provided with a second region of phase change material.

Abstract: RF commutator including: a phase change material (7) arranged between a first conducting element (2) and a second conducting element (4), means of heating (11, 13) the phase change material provided with a first electrode (11) and a second electrode (13), the means of heating being capable of modifying the state of the phase change material (7) by injection of an electrical activation signal between the first electrode and the second electrode, at least one given electrode (11, 13) among the first electrode (11) and second electrode (13) comprising a conducting part (15a) arranged between the first conducting element (2) and the second conducting element (4), zones of the phase change material being laid out between the first conducting element (2) and the second conducting element (4) and being arranged on either side of this conducting part (15a).

Abstract: A method for packaging a microelectronic device in an hermetically sealed cavity and managing an atmosphere of the cavity with a dedicated hole, including making said cavity between a support and a cap layer such that a sacrificial material and the device are arranged in the cavity; removing the sacrificial material through at least one release hole, and hermetically sealing the release hole; making a portion of wettable material on the cap layer, around a blind hole or a part of said outside surface corresponding to a location of said dedicated hole; making a portion of fuse material on the portion of wettable material; making the dedicated hole by etching the cap layer; and reflowing the portion of fuse material with a controlled atmosphere, forming a bump of fuse material which hermetically plugs said dedicated hole.

Abstract: Selector switch provided with: a structure based on at least one phase change material placed between a first conducting element and a second conducting element, the phase change material being capable of changing state, means of heating the phase change material provided with at least one first heating electrode and at least one other heating electrode, the structure based on a phase change material being configured to form a confined active zone of the phase change material at a distance from the conducting elements.

Abstract: RF commutator including: a phase change material (7) arranged between a first conducting element (2) and a second conducting element (4), means of heating (11, 13) the phase change material provided with a first electrode (11) and a second electrode (13), the means of heating being capable of modifying the state of the phase change material (7) by injection of an electrical activation signal between the first electrode and the second electrode, at least one given electrode (11, 13) among the first electrode (11) and second electrode (13) comprising a conducting part (15a) arranged between the first conducting element (2) and the second conducting element (4), zones of the phase change material being laid out between the first conducting element (2) and the second conducting element (4) and being arranged on either side of this conducting part (15a).

Abstract: Method for making a cavity, comprising steps to: make a hole in a cover covering a sacrificial portion on a substrate; make a first layer on the cover, either in a first configuration covering a first region of the cover around the hole, or in a second configuration surrounding a first region of the cover around the hole; deposit a second layer covering the cover and the first layer and with, in a first configuration a low adhesion force between the first and second layers, or in a second configuration a low adhesion force between the second layer and the first region; etch the second layer, forming a flap of which a first part does not hermetically close or seal the hole, and of which a second end is fixed to a second region of the cover; etch the sacrificial portion; close the cavity.

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

Abstract: A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed; several separated portions of metallic material such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes; at least one diffusion barrier layer comprising at least one non-metallic material, arranged on the cap layer and forming a diffusion barrier against an atmosphere outside the cavity at least around the release holes; and wherein parts of the diffusion barrier layer are not covered by the portions of metallic material.

Abstract: Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Abstract: Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Abstract: A method for metalizing at least one blind via formed in at least one substrate, including: a) arranging at least one solid portion of electrically conductive material in the blind via, b) performing a thermal treatment of the solid portion of electrically conductive material, making it melt in the blind via, cooling the electrically conductive material, solidifying it in the blind via, and wherein, before carrying out step a), at least part of the walls of the blind via is covered with a material able to prevent wetting of said part of the walls of the blind via by the melted electrically conductive material obtained during the performance of step b), the solidified electrically conductive material obtained after carrying out step c) being able not to be secured to said non-wetting part of the walls of the blind via.