Patents by Inventor Dan T. Hockersmith

Dan T. Hockersmith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4661196
    Abstract: A substrate that is a portion of an electrode of a plasma reactor has two positions, a low position and a process position. They are achieved without generating particulate contaminate and are achieved additionally while the reaction chamber is maintained at its process pressure.Stainless steel bellows assemblies have an inter volume that are capped at both ends from a chamber between the bellows. One end of the bellows assembly is mounted to the process chamber in a fixed position and a substrate to the other end is attached and is movable. A positioning is achieved by introducing compressed air in the chamber between the bellows and overcoming the process pressure in the outer chamber. A second position is achieved by releasing the compressed air between the chamber between the bellows and allowing the process pressure in the process chamber to collapse the bellows assembly.
    Type: Grant
    Filed: October 22, 1984
    Date of Patent: April 28, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Dan T. Hockersmith, Joe W. Gilbert
  • Patent number: 4657620
    Abstract: A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.
    Type: Grant
    Filed: October 22, 1984
    Date of Patent: April 14, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, John E. Spencer, Dan T. Hockersmith, Randall C. Hildenbrand, Frederick W. Brown, Stanford P. Kohan
  • Patent number: 4657618
    Abstract: An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.
    Type: Grant
    Filed: October 22, 1984
    Date of Patent: April 14, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: John E. Spencer, Randall E. Johnson, Dan T. Hockersmith, Randall C. Hildenbrand, John I. Jones, William S. Jaspersen