Patents by Inventor Dan-Xia Xu

Dan-Xia Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060209411
    Abstract: An Echelle grating has alternate first (1a) and second (1b) sets of facets (1). The first set of facets (1a) is operative to reflect incident light (4) for diffraction and the second set of facets (1b) extends between adjacent facets of the first set (1a). Only the first set of facets (1a) is metallized to enhance reflection. The second set of facets (1b) is left unmetallized. This configuration reduces polarization dependent loss (PDL).
    Type: Application
    Filed: November 26, 2002
    Publication date: September 21, 2006
    Inventors: Andre Delage, Boris Lamontagne, Kokou Dossou, Siegfried Janz, Pavel Cheben, Lynden Erickson, Dan-Xia Xu, Sylvain Charbonneau
  • Publication number: 20060055935
    Abstract: A spectroscopic method and system for the spectral analysis of an optical signal directed to a wavelength dispersive component having two interleaved dispersive devices. For a single wavelength, the optical signal exiting the interleaved dispersive devices includes two wavefronts generally disposed at an angle to one another and producing an interference pattern. The interference pattern is detected and subsequently analyzed via a Fourier transform to produce the optical spectrum of the input beam. The method and system are applicable in a planar waveguide environment, in reflection and transmission geometries.
    Type: Application
    Filed: September 9, 2005
    Publication date: March 16, 2006
    Inventors: Pavel Cheben, Ian Powell, Siegfried Janz, Dan-Xia Xu
  • Publication number: 20050196114
    Abstract: In order to make a photonic device incorporating a waveguide, a waveguide is formed with a predetermined geometry. Birefringence is then controlled by determining the amount of stress induced within the waveguide.
    Type: Application
    Filed: September 29, 2004
    Publication date: September 8, 2005
    Applicant: National Research Council of Canada
    Inventors: Dan-Xia Xu, Pavel Cheben, Dan Dalacu, Siegfried Janz
  • Publication number: 20050141808
    Abstract: The multichannel waveguide device includes an array of waveguides located in a plane. Each waveguide channel has a redirecting element for redirecting a guided wave out of said plane, or vice versa. The redirecting elements are staggered in the direction of the waveguides so as to transform a one-dimensional array of in-plane waves into a two-dimensional array of out-of-plane waves, or vice versa.
    Type: Application
    Filed: December 21, 2004
    Publication date: June 30, 2005
    Applicant: National Research Council of Canada
    Inventors: Pavel Cheben, Siegfried Janz, Boris Lamontagne, Dan-Xia Xu
  • Publication number: 20050029455
    Abstract: According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of silicides, the proposed method provides a simple and elegant way to implement a photodetector design in which photogenerated carriers travel perpendicular to the direction of light propagation. Therefore, the speed and quantum efficiency of the photodetector may be optimized independently. This device configuration may be implemented in one of the two approaches: (a) waveguides formed through surface silicidation of a silicon-based layer of a substrate (b) waveguides formed through silicidation of ridge waveguide side-walls of a silicon-based layer of a substrate; The use of mature silicon technology promises low cost of production and other benefits.
    Type: Application
    Filed: September 20, 2004
    Publication date: February 10, 2005
    Inventors: Dan-Xia Xu, Siegfried Janz
  • Publication number: 20040240063
    Abstract: A method is desribed for controlling the pass band of an optical device wherein a phase mask is introduced to modify the shaped of an image produced by the photonic device.
    Type: Application
    Filed: November 28, 2003
    Publication date: December 2, 2004
    Inventors: Andre Delage, Muthukumaran Packirisamy, Siegfried Janz, Lynden Erickson, Dan-Xia Xu, Pavel Cheben, Boris Lamontage, Sylvain Charbonneau
  • Patent number: 6815245
    Abstract: According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of suicides, the proposed method provides a simple and elegant way to implement a photodetector design in which photogenerated carriers travel perpendicular to the direction of light propagation. Therefore, the speed and quantum efficiency of the photodetector may be optimized independently. This device configuration may be implemented in one of the two approaches: (a) waveguides formed through surface silicidation of a silicon-based layer of a substrate (b) waveguides formed through silicidation of ridge waveguide side-walls of a silicon-based layer of a substrate; The use of mature silicon technology promises low cost of production and other benefits.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: November 9, 2004
    Assignee: National Research Council of Canada
    Inventors: Dan-Xia Xu, Siegfried Janz
  • Publication number: 20040151459
    Abstract: The method consists of creating a compensating region within the slab waveguide region, with effective TE and TM mode refractive indices of the compensating region higher than those of the original slab waveguide. Such change in refractive indices is achieved by deposition of an over-layer on the compensating region.
    Type: Application
    Filed: November 28, 2003
    Publication date: August 5, 2004
    Inventors: Pavel Cheben, Siegfried Janz, Dan-Xia Xu, Andre Delage, Lynden Erickson, Boris Lamontage, Sylvain Charbonneau
  • Publication number: 20040151429
    Abstract: Disclosed is an optical double pass equalizer for equalizing a wavelength division multiplexed (WDM) signal. The equalizer comprises a multiplexer/demultiplexer and multiple variable optical attenuators (VOAs) integrated on a single monolithic chip. The WDM signal is demultiplexed into individual wavelength channels by the multiplexer/demultiplexer and each wavelength channel is equalized by a corresponding VOA. The equalized wavelength channels are then multiplexed into an equalized WDM signal by the multiplexer/demultiplexer. This provides several advantages, including a reduction in required assembly and assembly cost, as well as an improved dynamic range in attenuation level or alternatively a reduction in power consumption for a fix attenuation level compared to a single pass VOA unit.
    Type: Application
    Filed: November 28, 2003
    Publication date: August 5, 2004
    Inventors: Siegfried Janz, Dan-Xia Xu, Pavel Cheben, Andre Delage, Lynden Erickson, Boris Lamontagne, Sylvain Charbonneau
  • Publication number: 20030068113
    Abstract: A method is disclosed for polarization birefringence compensation in a photonic device with a slab waveguide having a core. A compensator region is formed in the slab waveguide to minimize the wavelength shift between light of different polarizations. A thin capping layer, typically of silicon nitride, having a higher refractive index than the core, is formed on the compensator region to increase the birefringence contrast between the compensator region and the planar waveguide.
    Type: Application
    Filed: January 25, 2002
    Publication date: April 10, 2003
    Inventors: Siegfried Janz, Dan-Xia Xu, Pavel Cheben, Andre Delage, Lynden Erickson, Boris Lamontagne, Sylvain Charbonneau
  • Publication number: 20030063849
    Abstract: A method is disclosed for polarization birefringence compensation in a photonic device with a slab waveguide having a core. A compensator region is formed in the slab waveguide to minimize the wavelength shift between light of different polarizations. A thin capping layer, typically of silicon nitride, having a higher refractive index than the core is formed on the compensator region to increase the birefringence contrast between the compensator region and the planar waveguide.
    Type: Application
    Filed: November 8, 2001
    Publication date: April 3, 2003
    Inventors: Siegfried Janz, Dan-Xia Xu, Pavel Cheben, Andre Delage, Lynden Erickson, Boris Lamontagne, Sylvain Charbonneau
  • Publication number: 20030048498
    Abstract: An optical performance monitor for measuring the performance of optical networks has an echelle grating for demultiplexing an input beam into a plurality of wavelengths that are focused onto an array of divided output waveguides. Each divided output waveguide is positioned to receive a corresponding demultiplexed wavelength from the echelle grating or other waveguide multiplexer device. The divided output waveguides laterally separate the corresponding demultiplexed wavelength into a first and second portions. A detector array is positioned to receive the respective portions of the demultiplexed wavelengths and by comparing their relative intensity it is possible to detect any drift in the nominal wavelengths of the channels.
    Type: Application
    Filed: November 8, 2001
    Publication date: March 13, 2003
    Inventors: Matt Pearson, Lynden Erickson, John Miller, Siegfried Janz, Dan-Xia Xu, Pavel Cheben, Andre Delage, Boris Lamontagne, Sylvain Charbonneau
  • Publication number: 20020079427
    Abstract: According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of suicides, the proposed method provides a simple and elegant way to implement a photodetector design in which photogenerated carriers travel perpendicular to the direction of light propagation. Therefore, the speed and quantum efficiency of the photodetector may be optimized independently. This device configuration may be implemented in one of the two approaches: (a) waveguides formed through surface silicidation of a silicon-based layer of a substrate (b) waveguides formed through silicidation of ridge waveguide side-walls of a silicon-based layer of a substrate; The use of mature silicon technology promises low cost of production and other benefits.
    Type: Application
    Filed: December 19, 2001
    Publication date: June 27, 2002
    Inventors: Dan-Xia Xu, Siegfried Janz
  • Patent number: 6331445
    Abstract: In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si1−x,Gex, and Si on a silicon substrate.
    Type: Grant
    Filed: May 7, 1999
    Date of Patent: December 18, 2001
    Assignee: National Research Council of Canada
    Inventors: Siegfried Janz, Hughes Lafontaine, Dan-Xia Xu