Patents by Inventor Daniel Domes
Daniel Domes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210028078Abstract: A semiconductor module arrangement includes a housing and at least one pair of semiconductor substrates arranged inside the housing. Each pair of semiconductor substrates includes first and second semiconductor substrates. The first semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The second semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer.Type: ApplicationFiled: July 24, 2020Publication date: January 28, 2021Inventor: Daniel Domes
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Publication number: 20200243489Abstract: A semiconductor arrangement includes at least two switching devices of a first type electrically coupled in parallel between a first terminal and a second terminal, and at least two switching devices of a second type electrically coupled in parallel between the second terminal and a third terminal. The switching devices of the first type and the switching devices of the second type are arranged in a power semiconductor module that has first and second longitudinal sides and first and second narrow sides. The switching devices of the first type and the switching devices of the second type are arranged next to each other in at least one row extending in a first horizontal direction that is parallel to the first and second longitudinal sides, such that within each of the at least one rows no more than two switching devices of the same type are arranged in direct succession.Type: ApplicationFiled: January 29, 2020Publication date: July 30, 2020Inventor: Daniel Domes
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Patent number: 10497684Abstract: A power semiconductor arrangement includes a plurality of half-bridges arranged in parallel alongside one another by way of a longer longitudinal side of the half-bridges. An input load current terminal, an output load current terminal and a phase terminal are arranged on a top side of each of the half-bridges, the input load current terminals and the output load current terminals being arranged on an imaginary line that runs orthogonal to the longer longitudinal side of the half-bridges. First connection plates are connected to respective ones of the output load current terminals, and second connection plates are connected to respective ones of the input load current terminals. The first connection plates are arranged above the second connection plates. The first and the second connection plates are arranged in parallel with one another and electrically insulated from one another.Type: GrantFiled: April 19, 2018Date of Patent: December 3, 2019Assignee: Infineon Technologies AGInventors: Matthias Wissen, Daniel Domes, Andreas Groove
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Patent number: 10475909Abstract: An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.Type: GrantFiled: May 30, 2017Date of Patent: November 12, 2019Assignee: Infineon Technologies, AGInventors: Thomas Basler, Roman Baburske, Daniel Domes, Johannes Georg Laven, Roland Rupp
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Publication number: 20180308827Abstract: A power semiconductor arrangement includes a plurality of half-bridges arranged in parallel alongside one another by way of a longer longitudinal side of the half-bridges. An input load current terminal, an output load current terminal and a phase terminal are arranged on a top side of each of the half-bridges, the input load current terminals and the output load current terminals being arranged on an imaginary line that runs orthogonal to the longer longitudinal side of the half-bridges. First connection plates are connected to respective ones of the output load current terminals, and second connection plates are connected to respective ones of the input load current terminals. The first connection plates are arranged above the second connection plates. The first and the second connection plates are arranged in parallel with one another and electrically insulated from one another.Type: ApplicationFiled: April 19, 2018Publication date: October 25, 2018Inventors: Matthias Wissen, Daniel Domes, Andreas Groove
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Patent number: 10032755Abstract: A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current terminal for a load current output. At least one outer load current terminal and at least one inner load current terminal per load current direction include a load current input and a load current output. At least one contacting device for common electrical contacting all of the load current terminals of the same load current direction includes a load current input and a load current output. The contacting device includes a plurality of terminal tongues which are respectively fastened on an associated load current terminal. The geometry and/or profile of the terminal tongue of an outer load current terminal differs from the geometry and/or profile of the terminal tongue of an inner load current terminal of the same contacting device.Type: GrantFiled: November 8, 2016Date of Patent: July 24, 2018Assignee: Infineon Technologies AGInventors: Daniel Domes, Reinhold Bayerer, Waleri Brekel
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Patent number: 9893175Abstract: An integrated circuit includes a power transistor and a drive circuit. The drive circuit includes at least one drive transistor. The power transistor and the at least one drive transistor are integrated in a common semiconductor body. The power transistor includes at least one transistor cell with a source region, a body region, a drift region, a drain region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The at least one drive transistor includes active device regions integrated in a well-like structure comprising dielectric sidewall layers.Type: GrantFiled: September 30, 2013Date of Patent: February 13, 2018Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Daniel Domes, Franz Hirler
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Publication number: 20170345917Abstract: An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.Type: ApplicationFiled: May 30, 2017Publication date: November 30, 2017Applicant: Infineon Technologies AGInventors: Thomas Basler, Roman Baburske, Daniel Domes, Johannes Georg Laven, Roland Rupp
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Patent number: 9698772Abstract: A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks.Type: GrantFiled: September 23, 2015Date of Patent: July 4, 2017Assignee: Infineon Technologies AGInventor: Daniel Domes
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Publication number: 20170141089Abstract: A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current terminal for a load current output. At least one outer load current terminal and at least one inner load current terminal per load current direction include a load current input and a load current output. At least one contacting device for common electrical contacting all of the load current terminals of the same load current direction includes a load current input and a load current output. The contacting device includes a plurality of terminal tongues which are respectively fastened on an associated load current terminal.Type: ApplicationFiled: November 8, 2016Publication date: May 18, 2017Inventors: Daniel Domes, Reinhold Bayerer, Waleri Brekel
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Publication number: 20160094216Abstract: A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks.Type: ApplicationFiled: September 23, 2015Publication date: March 31, 2016Inventor: Daniel Domes
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Patent number: 9147637Abstract: A module includes a DCB substrate and a discrete device mounted on the DCB substrate, wherein the discrete device comprises a leadframe, a semiconductor chip mounted on the leadframe and an encapsulation material covering the semiconductor chip.Type: GrantFiled: December 23, 2011Date of Patent: September 29, 2015Assignee: Infineon Technologies AGInventors: Ralf Otremba, Roland Rupp, Daniel Domes
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Patent number: 9106124Abstract: A low-inductive power semiconductor assembly is provided in which semiconductor switches are arranged behind one another in a main current path.Type: GrantFiled: March 4, 2011Date of Patent: August 11, 2015Assignee: Infineon Technologies AGInventors: Reinhold Bayerer, Daniel Domes
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Publication number: 20150091641Abstract: An integrated circuit includes a power transistor and a drive circuit. The drive circuit includes at least one drive transistor. The power transistor and the at least one drive transistor are integrated in a common semiconductor body. The power transistor includes at least one transistor cell with a source region, a body region, a drift region, a drain region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The at least one drive transistor includes active device regions integrated in a well-like structure comprising dielectric sidewall layers.Type: ApplicationFiled: September 30, 2013Publication date: April 2, 2015Inventors: Anton Mauder, Daniel Domes, Franz Hirler
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Patent number: 8787003Abstract: According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module.Type: GrantFiled: October 12, 2011Date of Patent: July 22, 2014Assignee: Infineon Technologies AGInventors: Daniel Domes, Reinhold Bayerer
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Patent number: 8729914Abstract: A circuit arrangement includes: a reverse conducting IGBT configured to allow for conducting a load current in a forward direction and in a reverse direction, the IGBT having a load current path and a gate electrode; a gate control unit connected to the gate electrode and configured to activate or deactivate the IGBT by charging or, respectively, discharging the gate electrode in accordance with a gate control signal; a gate driver unit configured to detect whether the IGBT conducts current in the forward direction or the reverse direction by sensing a gate current caused by a change of a voltage drop across the load path due to a changing of the reverse conducting IGBT into its reverse conducting state, the gate control unit further configured to deactivate the IGBT or to prevent an activation of the IGBT via its gate electrode when the gate driver unit detects that the IGBT is in its reverse conducting state.Type: GrantFiled: November 10, 2010Date of Patent: May 20, 2014Assignee: Infineon Technologies AGInventor: Daniel Domes
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Patent number: 8729566Abstract: A semiconductor switching arrangement includes a normally on semiconductor component of a first conduction type and a normally off semiconductor component of a second conduction type which is the complement of the first conduction type. A load path of the normally off semiconductor component is connected in series with the load path of the normally on semiconductor component. A first actuation circuit connected between the control connection of the normally on semiconductor component and a load path connection of the normally on semiconductor component. The load path connection of the normally on semiconductor component is arranged between the normally on and normally off semiconductor components. A second actuation circuit is connected between the control connection of the normally off semiconductor component and a load path connection of the normally off semiconductor component.Type: GrantFiled: April 14, 2011Date of Patent: May 20, 2014Assignee: Infineon Technologies AGInventors: Daniel Domes, Uwe Jansen
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Patent number: 8637964Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.Type: GrantFiled: October 26, 2011Date of Patent: January 28, 2014Assignee: Infineon Technologies AGInventors: Patrick Jones, Andre Christmann, Daniel Domes
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Patent number: 8487407Abstract: According to one embodiment of a module, the module includes a plurality of gate driver chips coupled in parallel and having a common gate input, a common supply voltage and a common output. The chips are spaced apart from one another and have a combined width extending between an edge of a first outer one of the chips and an opposing edge of a second outer one of the chips. The module further includes a plurality of capacitors coupled in parallel between ground and the common supply voltage, and a transverse electromagnetic (TEM) transmission line medium coupled to the common output of the chips and having a current flow direction perpendicular to the combined width of the chips.Type: GrantFiled: October 13, 2011Date of Patent: July 16, 2013Assignee: Infineon Technologies AGInventors: Reinhold Bayerer, Daniel Domes
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Patent number: 8478559Abstract: One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.Type: GrantFiled: March 19, 2012Date of Patent: July 2, 2013Assignee: Infineon Technologies AGInventors: Patrick Baginski, Reinhold Bayerer, Holger Ruething, Daniel Domes