Abstract: A target of a geodetic system based on global and local identification references. The target comprises a light emitter (LE) for emitting n predetermined modulated light patterns (MLPs) permanently assigned to one of m (m>n) global identification reference (GIR). The target transmits or receives data based on the assigned GIR. The geodetic system further comprises a geodetic surveying instrument comprising an optical sensor (OS) receives the MLPs and digitizes them using a fast sampling analogue-to-digital converter (ADC). A computing system selects one of the targets or receives a selection of the at least one target assigned to a selected GIR. One of n local identification references (LIRs) is temporarily assigned to the selected GIR. The light emitter of the selected target is directed to emit an MLP corresponding with the assigned LIR. Thus, by detection of the assigned LIR, the selected target is identified.

Abstract: A target of a geodetic system based on global and local identification references. The target comprises a light emitter (LE) for emitting n predetermined modulated light patterns (MLPs) permanently assigned to one of m (m>n) global identification reference (GIR). The target transmits or receives data based on the assigned GIR. The geodetic system further comprises a geodetic surveying instrument comprising an optical sensor (OS) receives the MLPs and digitizes them using a fast sampling analogue-to-digital converter (ADC). A computing system selects one of the targets or receives a selection of the at least one target assigned to a selected GIR. One of n local identification references (LIRs) is temporarily assigned to the selected GIR. The light emitter of the selected target is directed to emit an MLP corresponding with the assigned LIR. Thus, by detection of the assigned LIR, the selected target is identified.

Abstract: A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.

Abstract: Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.

Abstract: The present invention provides an independently addressable, vertical cavity surface emitting laser ("VCSEL") in the blue wavelength range of 390 to 430 nanometers. The gallium nitride-based laser structure is grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask on the gallium nitride layer on a sapphire substrate, areas in a second gallium nitride layer can have a low defect density upon which the remainder of the laser structure can be formed.

Abstract: This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.