Patents by Inventor Daniel L. Flamm
Daniel L. Flamm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7593040Abstract: A method and system for minimizing the effects of image motion in still cameras is provided. In one embodiment, a method of capturing an image in a digital camera is presented. The method includes calculating a sharpness value related to an image input. The method also includes evaluating the sharpness value to determine image motion. The method further includes capturing a next image input data from the image input responsive to evaluating the sharpness value.Type: GrantFiled: March 31, 2006Date of Patent: September 22, 2009Assignee: Omnivision Technologies, Inc.Inventors: Jizhang Shan, Jess Jan Young Lee, Guansong Liu, Hui Pan, Daniel L. Flamm
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Patent number: 6858112Abstract: A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of currents to phase and inverse-phase capacitive coupled voltages from the inductive coupling structure can be selectively maintained.Type: GrantFiled: November 18, 1996Date of Patent: February 22, 2005Assignee: Hitachi Kokusai Electric Co., Ltd.Inventors: Daniel L. Flamm, Georgy K. Vinogradov, Shimao Yoneyama
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Publication number: 20030168427Abstract: A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of currents to phase and inverse-phase capacitive coupled voltages from the inductive coupling structure can be selectively maintained.Type: ApplicationFiled: November 18, 1996Publication date: September 11, 2003Inventors: DANIEL L. FLAMM, Georgy Vinogradov, Shimao Yoneyama
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Patent number: 6231776Abstract: The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.Type: GrantFiled: September 10, 1998Date of Patent: May 15, 2001Inventor: Daniel L. Flamm
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Patent number: 6127275Abstract: A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.Type: GrantFiled: November 30, 1999Date of Patent: October 3, 2000Assignee: Daniel L. FlammInventor: Daniel L. Flamm
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Patent number: 6017221Abstract: A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.Type: GrantFiled: May 30, 1997Date of Patent: January 25, 2000Inventor: Daniel L. Flamm
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Patent number: 5980766Abstract: A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.Type: GrantFiled: October 2, 1997Date of Patent: November 9, 1999Assignee: Daniel L. FlammInventors: Daniel L. Flamm, John P. Verboncoeur
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Patent number: 5711849Abstract: A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.Type: GrantFiled: May 3, 1995Date of Patent: January 27, 1998Assignee: Daniel L. FlammInventors: Daniel L. Flamm, John P. Verboncoeur
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Patent number: 5304282Abstract: Plasma etching and deposition is accomplished utilizing a helical resonator constructed with an inner diameter coil greater than 60 percent of the outer shield diameter. The diameter of the conductor used to form the coil is not critical and can be less than 40 percent of the winding pitch in some applications. These parameters permit helical resonator plasma sources to be more compact and economical, and facilitate improved uniformity for processing large substrates.Type: GrantFiled: April 17, 1991Date of Patent: April 19, 1994Inventor: Daniel L. Flamm
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Patent number: 4960656Abstract: Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.Type: GrantFiled: December 12, 1989Date of Patent: October 2, 1990Assignee: AT&T Bell LaboratoriesInventors: Chorng-Ping Chang, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha
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Patent number: 4918031Abstract: Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.Type: GrantFiled: December 28, 1988Date of Patent: April 17, 1990Assignee: American Telephone and Telegraph Company,AT&T Bell LaboratoriesInventors: Daniel L. Flamm, Dale E. Ibbotson, Wayne L. Johnson
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Patent number: 4554047Abstract: The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effects are avoided. The downstream apparatus utilizes a discharge region that is relatively large compared to the volume occupied by the substrates. Additionally, the concentration of the etchant species in the effluent is maintained at a level that is of the same order as that produced in the discharge region.Type: GrantFiled: October 12, 1984Date of Patent: November 19, 1985Assignees: AT&T Bell Laboratories, AT&T TechnologiesInventors: Joel M. Cook, Daniel L. Flamm, Edward H. Mayer, Bernard C. Seiler
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Patent number: 4498953Abstract: A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.Type: GrantFiled: July 27, 1983Date of Patent: February 12, 1985Assignee: AT&T Bell LaboratoriesInventors: Joel M. Cook, Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha
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Patent number: 4397711Abstract: Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.Type: GrantFiled: October 1, 1982Date of Patent: August 9, 1983Assignee: Bell Telephone Laboratories, IncorporatedInventors: Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson
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Patent number: 4394237Abstract: A method for accurately monitoring and adjusting gas phase processes such as gas etching and chemical vapor deposition has been found. This method relies on the use of induced fluorescence. The gaseous phase used in the process to be monitored is probed by excitation with a suitable energy source. The emission from the gas phase induced through this excitation is then monitored and yields an accurate measure of concentration of the active species present. In turn the conditions of the fabrication process are adjusted based on these discerned concentrations.Type: GrantFiled: July 17, 1981Date of Patent: July 19, 1983Assignee: Bell Telephone Laboratories, IncorporatedInventors: Vincent M. Donnelly, Daniel L. Flamm, Robert F. Karlicek, Jr.
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Patent number: 4377436Abstract: Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.Type: GrantFiled: November 5, 1981Date of Patent: March 22, 1983Assignee: Bell Telephone Laboratories, IncorporatedInventors: Vincent M. Donnelly, Daniel L. Flamm
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Patent number: 4372834Abstract: Silicon tetrachloride is processed to ultrahigh purity by subjecting it to a specific succession of purification steps. These steps include the photochlorination of the SiCl.sub.4 using a reactor that allows a long residence time for the SiCl.sub.4. After photochlorination, highly volatile products such as HCl are removed and the remaining impurities are then separated by a distillation technique.Type: GrantFiled: June 19, 1981Date of Patent: February 8, 1983Assignee: Bell Telephone Laboratories, IncorporatedInventors: Robert L. Barns, Edwin A. Chandross, Daniel L. Flamm, Louis T. Manzione, Larry F. Thompson
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Patent number: 4314875Abstract: Etch rate in plasma-assisted etching is increased by inclusion of an additional oxidant. The oxidant increases consumption of unsaturates in the plasma to increase etchant species lifetime and to suppress polymer formation.Type: GrantFiled: May 13, 1980Date of Patent: February 9, 1982Assignee: Bell Telephone Laboratories, IncorporatedInventor: Daniel L. Flamm
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Patent number: 4310380Abstract: By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of monocrystalline silicon (48) and doped or undoped polycrystalline silicon (54) is achieved. The etching processes, which are applicable, for example, to pattern delineation in the processing of semiconductor wafers, are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled.Type: GrantFiled: April 7, 1980Date of Patent: January 12, 1982Assignee: Bell Telephone Laboratories, IncorporatedInventors: Daniel L. Flamm, Dan Maydan, David N. Wang
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Patent number: RE40264Abstract: The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.Type: GrantFiled: May 14, 2003Date of Patent: April 29, 2008Inventor: Daniel L. Flamm