Patents by Inventor Daniel M. Kinzer

Daniel M. Kinzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Zero voltage soft switching scheme for power converters
    Patent number: 9621044
    Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: April 11, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Ju Jason Zhang, Daniel M. Kinzer
  • Electronic packages for flip chip devices
    Patent number: 9613891
    Abstract: Electronic packages are formed from a generally planar leadframe having a plurality of leads coupled to a GaN-based semiconductor device, and are encased in an encapsulant. The plurality of leads are interdigitated and are at different voltage potentials.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: April 4, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventor: Daniel M. Kinzer
  • Half bridge driver circuits
    Patent number: 9571093
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: February 14, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Integrated level shifter
    Patent number: 9570927
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: February 14, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Level shift and inverter circuits for GaN devices
    Patent number: 9537338
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: January 3, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • INTEGRATED ESD PROTECTION CIRCUITS IN GAN
    Publication number: 20160372920
    Abstract: An electronic circuit is disclosed and described herein. The circuit includes first and second pins, and an overvoltage protection circuit including a first enhancement-mode transistor. The overvoltage protection circuit is disposed on a GaN-based substrate, and the first enhancement mode transistor is configured to provide overvoltage protection between the first and second pins.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 22, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Jason Zhang, Marco Giandalia
  • PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES
    Publication number: 20160336926
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
    Type: Application
    Filed: July 25, 2016
    Publication date: November 17, 2016
    Applicant: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • LEADLESS ELECTRONIC PACKAGES FOR GAN DEVICES
    Publication number: 20160247751
    Abstract: Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ “L” shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.
    Type: Application
    Filed: February 22, 2016
    Publication date: August 25, 2016
    Applicant: NAVITAS SEMICONDUCTOR INC.
    Inventor: Daniel M. Kinzer
  • ELECTRONIC PACKAGES FOR FLIP CHIP DEVICES
    Publication number: 20160247748
    Abstract: Electronic packages are formed from a generally planar leadframe having a plurality of leads coupled to a GaN-based semiconductor device, and are encased in an encapsulant. The plurality of leads are interdigitated and are at different voltage potentials.
    Type: Application
    Filed: December 14, 2015
    Publication date: August 25, 2016
    Inventor: Daniel M. Kinzer
  • Zero Voltage Soft Switching Scheme for Power Converters
    Publication number: 20160218623
    Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
    Type: Application
    Filed: April 1, 2016
    Publication date: July 28, 2016
    Applicant: NAVITAS SEMICONDUCTOR INC.
    Inventors: Ju Jason Zhang, Daniel M. Kinzer
  • Pulsed level shift and inverter circuits for GaN devices
    Patent number: 9401612
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: July 26, 2016
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Trench-based power semiconductor devices with increased breakdown voltage characteristics
    Patent number: 9391193
    Abstract: Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: July 12, 2016
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Dean E. Probst, Daniel Calafut
  • Zero voltage soft switching scheme for power converters
    Patent number: 9379620
    Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: June 28, 2016
    Assignee: Navitas Semiconductor Inc.
    Inventors: Ju Jason Zhang, Daniel M. Kinzer
  • Zero Voltage Soft Switching Scheme for Power Converters
    Publication number: 20160099647
    Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
    Type: Application
    Filed: November 26, 2014
    Publication date: April 7, 2016
    Inventors: Ju Jason Zhang, Daniel M. Kinzer
  • GaN STRUCTURES
    Publication number: 20160086938
    Abstract: A semiconductor device is disclosed. The device includes a substrate including GaN, a two dimensional electron gas (2DEG) inducing layer on the substrate, and a lateral transistor on the 2DEG inducing layer. The lateral transistor includes source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a field plate between the gate and the drain contact. The device also includes one or more insulation layers on the 2DEG inducing layer, where the field plate is spaced apart from the 2DEG inducing layer by the insulation layers, and a conductor on the insulation layers, where a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.
    Type: Application
    Filed: September 17, 2015
    Publication date: March 24, 2016
    Inventor: Daniel M. Kinzer
  • BOOTSTRAP CAPACITOR CHARGING CIRCUIT FOR GAN DEVICES
    Publication number: 20160079785
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Application
    Filed: March 24, 2015
    Publication date: March 17, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • HALF BRIDGE POWER CONVERSION CIRCUITS USING GAN DEVICES
    Publication number: 20160079844
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Application
    Filed: March 24, 2015
    Publication date: March 17, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • GaN CIRCUIT DRIVERS FOR GaN CIRCUIT LOADS
    Publication number: 20160079854
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.
    Type: Application
    Filed: June 11, 2015
    Publication date: March 17, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES
    Publication number: 20160079979
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Application
    Filed: March 24, 2015
    Publication date: March 17, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • INTEGRATED BIAS SUPPLY, REFERENCE AND BIAS CURRENT CIRCUITS FOR GAN DEVICES
    Publication number: 20160079853
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Application
    Filed: March 24, 2015
    Publication date: March 17, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang