Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. A first dielectric layer is disposed over a substrate and includes a bi-metal oxide having tin and bismuth or niobium. A seed layer is disposed directly on the first dielectric layer. A reflective layer including silver is disposed directly on the seed layer. A barrier layer is disposed above the reflective layer. The barrier layer includes one of a nickel chromium titanium aluminum alloy or a nickel chromium titanium aluminum oxide. The nickel chromium titanium aluminum alloy or the nickel chromium titanium aluminum oxide includes between about 5% and about 10% by weight nickel, between about 25% and about 30% by weight chromium, between about 30% and about 35% by weight titanium, and between about 30% and about 35% by weight aluminum.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract: Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A low-e stack is formed above the transparent substrate. Each of the layers of the low-e stack are formed to have a specific thickness to tune the performance characteristics of the low-e panel.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A first dielectric layer is formed above the transparent substrate. The first dielectric layer includes zinc, tin, and aluminum. A first reflective layer is formed above the first dielectric layer. A second dielectric layer is formed above the first reflective layer. The second dielectric layer includes zinc, tin, and aluminum. A second reflective layer is formed above the second dielectric layer.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.

Abstract: Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.

Abstract: Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.

Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

Abstract: Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.