Abstract: In some embodiments, a method comprises forming a pilot hole or damage track through a laminate glass structure using a laser. The laminate glass structure comprising a first layer and a second layer adjacent to the first layer. The first layer is formed from a first glass composition. The second layer is formed from a second glass composition different from the first glass composition. After forming the pilot hole, the laminate glass structure is exposed to etching conditions that etch the first glass composition at a first etching rate and the second glass composition at a second etching rate, wherein the first etch rate is different from the second etch rate, to form an etched hole.

Abstract: Embodiments are related generally to display devices, and more particularly to displays or display tiles having electrodes that extend from a first surface to a second surface of a substrate.

Abstract: The described embodiments relate generally to a micro-perforated panel systems and methods for noise abatement and method of making a micro-perforated panel system. In particular, embodiments relate to glass micro-perforated panel systems and methods for their construction.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: The described embodiments relate generally to a micro-perforated panel systems and methods for noise abatement and method of making a micro-perforated panel system. In particular, embodiments relate to glass micro-perforated panel systems and methods for their construction.

Abstract: Embodiments are related to systems and methods for forming vias in a substrate, and more particularly to systems and methods for reducing substrate surface disruption during via formation.

Abstract: Embodiments are related to systems and methods for forming vias in a substrate, and more particularly to systems and methods for reducing substrate surface disruption during via formation.

Abstract: Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 ?m. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.

Abstract: A method for processing a transparent workpiece includes forming a closed contour line having a plurality of defects in the transparent workpiece such that the closed contour line defines a closed contour. Forming the closed contour line includes directing a pulsed laser beam through an aspheric optical element and into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, the induced absorption producing a defect within the transparent workpiece, and translating the transparent workpiece and the pulsed laser beam relative to each other along the closed contour line. The method further includes etching the transparent workpiece with a chemical etching solution at an etching rate of about 2.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

Abstract: A method of forming a glass substrate includes providing a glass substrate having alumina, translating a pulsed laser beam on the glass substrate to form one or more pilot holes, contacting the glass substrate with an etching solution, and providing agitation. The etching solution has a pH from about 0 to about 2.0, and an etch rate is less than about 3 ?m/min. A glass substrate is disclosed having a first surface and a second surface opposite the first surface in a thickness direction, and at least one hole penetrating the first surface, wherein the at least one hole has been etched by an etching solution. A greatest distance d1 between (1) a first plane that contacts the first surface in regions that do not have the at least one hole or a deviation in a thickness of the substrate surrounding the at least one hole and (2) a surface of the deviation recessed from the first plane is less than or equal to about 0.2 ?m.

Abstract: A device includes a sheet of high purity fused silica that has a thickness of less than 500 ?m, where the sheet includes features in the sheet, wherein the features have a cross-sectional dimension of less than 50 ?m and a depth of at least 100 nm, wherein the features are spaced apart from one another by a distance of less than 50 ?m, and wherein the silica is free of indicia of grinding and polishing.

Abstract: Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 ?m. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.