Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.

Abstract: It is describes a material in the form of lithium fluoride powder containing color centers and the method for its preparation, by the formation of color centers based on irradiating the powder with synchrotron radiation (light). The method involves mechanically reducing the size of the particles that form the LiF powder and the formation of color centers therein by its exposure to synchrotron radiation. The so activated powder, which maintains the transparency characteristics of the original material if exposed to sunlight, can find wide use as an additive both in common printing inks and in pigments used in the artistic field to be used for the formation of marks on artifacts for anti-counterfeiting/identification purposes.

Abstract: It is describes a material in the form of lithium fluoride powder containing colour centres and the method for its preparation, by the formation of colour centres based on irradiating the powder with synchrotron radiation (light). The method involves mechanically reducing the size of the particles that form the LiF powder and the formation of colour centres therein by its exposure to synchrotron radiation. The so activated powder, which maintains the transparency characteristics of the original material if exposed to sunlight, can find wide use as an additive both in common printing inks and in pigments used in the artistic field to be used for the formation of marks on artefacts for anti-counterfeiting/identification purposes.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.