Abstract: A dual large area plasma processing system is provided which can comprise a substrate, a first and second electron beam wherein the substrate is positioned between the first and second electron beam, a first plasma produced by the first electron beam passing through a first gas wherein the first plasma being a first low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface; and a second plasma produced by the second electron beam passing through a second gas wherein the second plasma being a low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface. The system can include a first gas manifold that can be located above the first electron beam and control the first gas and a second gas manifold that can be located above the second electron beam and control the second gas. The system can include an external magnetic field for confining the electron beams so as to produce uniform plasmas.

Abstract: An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.

Abstract: A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.

Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.

Abstract: This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.