Abstract: A device uses donor circuit blocks in a donor integrated circuit to replace defective circuit blocks in a recipient integrated circuit and create a functional integrated circuit. The recipient integrated circuit has a first number of cores, the first number including a recipient core, and the recipient core having a recipient circuit block, a switching element, and a recipient communication point, the first number of cores connected by a data bus. The recipient core has an intended function. The donor integrated circuit has a second number of cores, the second number smaller than the first number. The second number includes a donor core having a donor communication point electrically connected to a donor circuit block, the donor circuit block having the intended function. The recipient connection point is electrically connected to the donor connection point and the switching element switched to disable the recipient circuit block in the recipient core.

Abstract: A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.

Abstract: A method, apparatus, and structure are provided for implementing selective rework for chip stacks. A backside metal layer to create resistive heating is added to a chip backside in a chip stack. A rework tool applies a predefined current to the backside metal layer to reflow solder connections and enables separating selected chips in the chip stack.

Abstract: A method, apparatus, and structure are provided for implementing selective rework for chip stacks. A backside metal layer to create resistive heating is added to a chip backside in a chip stack. A rework tool applies a predefined current to the backside metal layer to reflow solder connections and enables separating selected chips in the chip stack.

Abstract: A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lower level semiconductor chip is connected to or disconnected from a voltage domain in the upper level semiconductor chip. The TSVG comprises an FET controlled by the lower level chip as a switch.

Abstract: Method and apparatus and associated method of detecting microchip tampering may include a conductive element in electrical communication with multiple sensors for verifying that signal degradation occurs at an expected region of the conductive element. A detected variance from the expected region may automatically trigger an action for impeding an integrated circuit exploitation process.

Abstract: A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.

Abstract: A method, program product and apparatus include resistance structures positioned proximate security sensitive microchip circuitry. Alteration in the position, makeup or arrangement of the resistance structures may be detected and initiate an action for defending against a reverse engineering or other exploitation effort. The resistance structures may be automatically and selectively designated for monitoring. Some of the resistance structures may have different resistivities. The sensed resistance may be compared to an expected resistance, ratio or other resistance-related value. The structures may be intermingled with false structures, and may be overlapped or otherwise arranged relative to one another to further complicate unwelcome analysis.

Abstract: A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lower level semiconductor chip is connected to or disconnected from a voltage domain in the upper level semiconductor chip. The TSVG comprises an FET controlled by the lower level chip as a switch.

Abstract: A method and apparatus include conductive material doped within a microchip that accumulates a detectable charge in the presence of ions. Such ions may result from a focused ion beam or other unwelcome technology exploitation effort. Circuitry sensing the charge buildup in the embedded, doped material may initiate a defensive action intended to defeat the tampering operation.

Abstract: An apparatus and method detect microchip tampering by including a capacitance circuit that comprises a protective cover. Dielectric material may be sandwiched between the cover and a backside metal layer, which may be proximate a protected surface of the microchip. Changes in the capacitance of the above circuit caused by alteration of the cover or other component of the capacitance circuit may be sensed and prompt defensive action.

Abstract: Apparatus, method and program product may detect an attempt to tamper with a microchip by detecting an unacceptable alteration in a measured capacitance associated with capacitance structures proximate the backside of a microchip. The capacitance structures typically include metallic shapes and may connect using through-silicon vias to active sensing circuitry within the microchip. In response to the sensed change, a shutdown, spoofing, self-destruct or other defensive action may be initiated to protect security sensitive circuitry of the microchip.

Abstract: A method of making an integrated circuit package includes forming a through hole in an integrated circuit and assembling a die containing the integrated circuit on a carrier so that the die is mechanically and electrically connected to the carrier. Thereafter, an underfill material is dispensed between the die and the carrier via the through hole.

Abstract: System and method for designing an electronic package. A placement manager receives a physical design of an electronic package from a packaging design tool. The placement manager receives design constraints regarding the physical design for the electronic package. The placement manager inserts specifications for at least one de-gassing opening in the physical design for the electronic package, wherein the specification for at least one de-gassing opening are created in accordance with said design constraints regarding said physical design of said electronic package. The placement manager outputs an updated physical design of the electronic package.

Abstract: A design structure embodied in a machine readable medium used in a design process includes random access memory device having an array of individual memory cells arranged into rows and columns, each memory cell having an access device associated therewith. Each row of the array further includes a plurality of N word lines associated therewith, with a wherein N corresponds to a number of independently accessible partitions of the array, wherein each access device in a given row is coupled to only one of the N word lines of the row. Logic in signal communication with the array receives a plurality of row address bits and determine, for a requested row identified by the row address bits, which of the N partitions within the requested row are to be accessed, such that access devices within a selected row, but not within a partition to be accessed, are not activated.

Abstract: An integrated circuit assembly and associated method of detecting microchip tampering may include multiple connections in electrical communication with a conductive layer. Defensive circuitry may inhibit analysis of the microchip where a connection no longer connects to the conductive layer. The defensive circuitry may similarly be initiated where a connection unintended to be in electrical communication with the conductive layer is nonetheless connected.

Abstract: A circuit assembly includes a functional chip and a first capacitor. The functional chip includes a first logic island and a second logic island. The first capacitor is configured to be selectively coupled (e.g., at different times) to a first power supply terminal of the first logic island and a second power supply terminal of the second logic island.

Abstract: An integrated circuit assembly and associated method of detecting microchip tampering may include multiple connections in electrical communication with a conductive layer. Defensive circuitry may inhibit analysis of the microchip where a connection no longer connects to the conductive layer. The defensive circuitry may similarly be initiated where a connection unintended to be in electrical communication with the conductive layer is nonetheless connected.

Abstract: Apparatus, method and program product may detect an attempt to tamper with a microchip by detecting an unacceptable alteration in a measured capacitance associated with capacitance structures proximate the backside of a microchip. The capacitance structures typically comprise metallic shapes and may connect using through-silicon vias to active sensing circuitry within the microchip. In response to the sensed change, a shutdown, spoofing, self-destruct or other defensive action may be initiated to protect security sensitive circuitry of the microchip.

Abstract: A method and apparatus include conductive material doped within a microchip that accumulates a detectable charge in the presence of ions. Such ions may result from a focused ion beam or other unwelcome technology exploitation effort. Circuitry sensing the charge buildup in the embedded, doped material may initiate a defensive action intended to defeat the tampering operation.