Abstract: The present invention concerns an optoelectronic device, in particular an optical wavelength converter or infrared (IR) emitting or IR photodiode device, comprising an organic matrix, wherein the organic matrix is coated with at least one layer comprising an amorphous fluoropolymer. The invention also pertains to a method for the production of such devices.

Abstract: In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al2O3 single crystals, and wherein the conversion element comprises at least one groove.

Abstract: In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ?30 ?m.

Abstract: Methods, systems, and materials for producing micro-pixelated LEDs capable of achieving a full-color spectrum through stereolithography techniques are provided. The techniques include depositing a photocurable nanophosphor ink composition onto a substrate, projecting a pattern onto the substrate and ink composition, and then curing at least a portion of the ink composition based on the projected pattern. The ink composition includes at least one photocurable polymer, a plurality of nanophosphors (e.g., QDs), and at least one light-scattering additive. The resulting cured ink composition and substrate component can be a pixelated LED that is configured to fully convert blue light-emitting pixels to red and green light-emitting pixels. Printing systems for performing these methods and producing these LEDs are also disclosed, as are various, non-limiting examples of ink composition formulations.

Abstract: In an embodiment, a method includes providing a substrate and epitaxially growing a semiconductor layer of a semiconductor material on the substrate using physical vapor deposition, wherein the semiconductor material has a tetragonal phase, wherein the semiconductor material has the general formula: (In1-xMx)(Te1-yZy), and wherein M=Ga, Zn, Cd, Hg, Tl, Sn, Pb, Ge, or combinations thereof, Z?As, S, Se, Sb, or combinations thereof, x=0-0.1, and y=0-0.1, or wherein the semiconductor material has the general formula: (In1-xTlx)(Te1-ySey) with x=0-1 and y=0-1.

Abstract: In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al2O3 single crystals, and wherein the conversion element comprises at least one groove.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720° C.

Abstract: A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Abstract: A method for producing a light-emitting semiconductor device and a light-emitting semiconductor device are disclosed. In an embodiment, a method for producing a light-emitting semiconductor device includes providing a growth substrate that is transmissive for visible light; and growing a semiconductor layer sequence on the growth substrate, wherein the semiconductor layer sequence is based on InGaAlP, and wherein the semiconductor layer sequence comprises a multi-quantum well structure configured to absorb blue light or near-ultraviolet radiation and configured to re-emit light in a yellow, orange or red spectral range.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Abstract: A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ?30 ?m.

Abstract: A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720° C.

Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 ?m inclusive.

Abstract: A method for producing a laser activated remote phosphor (LARP) sub-assembly, which may comprise: preparing a target composed of a material; activating the target such that the material is released from the target; directing the material released from the target in the direction of a wavelength converter and depositing the material released from the target onto a major surface of the wavelength converter creating a bonding film.

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.