Abstract: An apparatus may include a device and an image projection system configured to form an image on a surface viewable by a user. The image projection circuit may be configured to receive signals from the device, generate a pattern representative of data, process the pattern into a mirror image of the image, and project the mirror image from the device. The image projection system may include an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the surface. A method for projecting data may include providing the device with the image, and providing the image to the surface with the image projection system. The method may also include manipulating the device and/or a body part to locate and focus the image, sensing an orientation of the device, and orienting the image based, at least in part, on the sensing step.

Abstract: An apparatus may include a device and an image projection system configured to form an image on a surface viewable by a user. The image projection circuit may be configured to receive signals from the device, generate a pattern representative of data, process the pattern into a mirror image of the image, and project the mirror image from the device. The image projection system may include an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the surface. A method for projecting data may include providing the device with the image, and providing the image to the surface with the image projection system. The method may also include manipulating the device and/or a body part to locate and focus the image, sensing an orientation of the device, and orienting the image based, at least in part, on the sensing step.

Abstract: An apparatus may include a device and an image projection system configured to form an image on a surface viewable by a user. The image projection circuit may be configured to receive signals from the device, generate a pattern representative of data, process the pattern into a mirror image of the image, and project the mirror image from the device. The image projection system may include an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the surface. A method for projecting data may include providing the device with the image, and providing the image to the surface with the image projection system. The method may also include manipulating the device and/or a body part to locate and focus the image, sensing an orientation of the device, and orienting the image based, at least in part, on the sensing step.

Abstract: An apparatus may include a device and an image projection system configured to form an image on a surface viewable by a user. The image projection circuit may be configured to receive signals from the device, generate a pattern representative of data, process the pattern into a mirror image of the image, and project the mirror image from the device. The image projection system may include an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the surface. A method for projecting data may include providing the device with the image, and providing the image to the surface with the image projection system. The method may also include manipulating the device and/or a body part to locate and focus the image, sensing an orientation of the device, and orienting the image based, at least in part, on the sensing step.

Abstract: A portable phone includes a handset and a data projection system configured to form a visual image of data, such as caller waiting ID data, on a viewing surface viewable by a user during a two way conversation. The handset also includes a speaker, a microphone, conventional phone circuitry and a keyboard. The data projection system is configured to receive signals from the phone circuitry, to generate a pattern representative of the data, to process the pattern into a mirror image of the visual image, and to project the mirror image from a bottom end surface of the handset. The projection system includes an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the viewing surface.

Abstract: A portable phone includes a handset and a data projection system configured to form a visual image of data, such as caller waiting ID data, on a viewing surface viewable by a user during a two way conversation. The handset also includes a speaker, a microphone, conventional phone circuitry and a keyboard. The data projection system is configured to receive signals from the phone circuitry, to generate a pattern representative of the data, to process the pattern into a mirror image of the visual image, and to project the mirror image from a bottom end surface of the handset. The projection system includes an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the viewing surface.

Abstract: A portable phone includes a handset and a data projection system configured to form a visual image of data, such as caller waiting ID data, on a viewing surface viewable by a user during a two way conversation. The handset also includes a speaker, a microphone, conventional phone circuitry and a keyboard. The data projection system is configured to receive signals from the phone circuitry, to generate a pattern representative of the data, to process the pattern into a mirror image of the visual image, and to project the mirror image from a bottom end surface of the handset. The projection system includes an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the viewing surface.

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract: An improved method for sharpening emitter sites for cold cathode field emission displays (FEDS) includes the steps of: forming a projection on a baseplate; growing an oxide layer on the projection using a low temperature oxidation process; and then stripping the oxide layer. Preferred low temperature oxidation processes include: wet bath anodic oxidation, plasma assisted oxidation and high pressure oxidation. These low temperature oxidation processes grow an oxide film using a consumptive process in which oxygen reacts with a material of the projection. This permits emitter sites to be fabricated with less distortion and grain boundary formation than emitter sites formed with thermal oxidation. As an example, emitter sites can be formed of amorphous silicon. In addition, low temperature materials such as glass can be used in fabricating baseplates without the introduction of high temperature softening and stress.

Abstract: A method and a control circuit for controlling a field emission display to reduce emission to grid during turn on and turn off are provided. In an illustrative embodiment, the control circuit includes a threshold detector that receives an input signal proportional to an anode voltage (VAnode) for the display and produces a high or low output signal dependent on the level of VAnode. An output low corresponding to a high voltage at the display screen enables a gate element of a pass transistor that controls current flow to the grid. Alternately, an output high corresponding to a low voltage at the display screen enables a pull down transistor that controls discharge of the grid to ground. The control circuit can also include a fault detection circuit for detecting a sharp decrease in the anode voltage and discharging the grid.

Abstract: A field emission display includes an array of emitter sites, a grid for controlling electron emission from the emitter sites, and a display screen. The field emission display also includes a control circuit for controlling the grid for preventing emission to grid. The control circuit includes a high impedance grid bias path, and a low impedance grid bias path. In addition, the control circuit includes a sensing-switching circuit for sensing an anode voltage at the display screen, and switching from the high impedance to the low impedance grid bias path upon detection of a threshold anode voltage. An alternate embodiment control circuit is configured to provide a programmable delay during enabling of the grid to insure that the display screen reaches the threshold voltage prior to electron emission. An alternate embodiment field emission display includes a focus ring that is controlled to prevent emission to grid.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A field emission display includes an array of emitter sites, a grid for controlling electron emission from the emitter sites, and a display screen. The field emission display also includes a control circuit for controlling the grid for preventing emission to grid. The control circuit includes a high impedance grid bias path, and a low impedance grid bias path. In addition, the control circuit includes a sensing-switching circuit for sensing an anode voltage at the display screen, and switching from the high impedance to the low impedance grid bias path upon detection of a threshold anode voltage. An alternate embodiment control circuit is configured to provide a programmable delay during enabling of the grid to insure that the display screen reaches the threshold voltage prior to electron emission. An alternate embodiment field emission display includes a focus ring that is controlled to prevent emission to grid.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.