Patents by Inventor David B. Mitzi

David B. Mitzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9184322
    Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 10, 2015
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
  • Patent number: 9178466
    Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: November 3, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, Yves C. Martin, David B. Mitzi, Robert L. Sandstrom, Theodore G. Van Kessel
  • Patent number: 9178467
    Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: November 3, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, Yves C. Martin, David B. Mitzi, Robert L. Sandstrom, Theodore G. van Kessel
  • Patent number: 9153729
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: October 6, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeehwan Kim, David B. Mitzi, Byungha Shin, Teodor K. Todorov, Mark T. Winkler
  • Publication number: 20150263199
    Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
    Type: Application
    Filed: June 1, 2015
    Publication date: September 17, 2015
    Inventors: OKI GUNAWAN, JEEHWAN KIM, DAVID B. MITZI, DEVENDRA K. SADANA, TEODOR K. TODOROV
  • Publication number: 20150059855
    Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 5, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
  • Publication number: 20150059856
    Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.
    Type: Application
    Filed: September 25, 2013
    Publication date: March 5, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Marinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
  • Publication number: 20150027521
    Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Applicant: International Business Machines Corporation
    Inventors: Keith E. Fogel, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Publication number: 20150000741
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 1, 2015
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Publication number: 20140329355
    Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.
    Type: Application
    Filed: July 16, 2014
    Publication date: November 6, 2014
    Inventors: Min Yuan, David B. Mitzi, Wei Liu
  • Patent number: 8803141
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: August 12, 2014
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Patent number: 8802977
    Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.
    Type: Grant
    Filed: May 9, 2008
    Date of Patent: August 12, 2014
    Assignee: International Business Machines Corporation
    Inventors: Min Yuan, David B. Mitzi, Wei Liu
  • Publication number: 20140147960
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 29, 2014
    Applicant: International Business Machines Corporation
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Publication number: 20140147958
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Application
    Filed: August 14, 2013
    Publication date: May 29, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeehwan Kim, David B. Mitzi, Byungha Shin, Teodor K. Todorov, Mark T. Winkler
  • Publication number: 20140147961
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 29, 2014
    Applicant: International Business Machines Corporation
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Publication number: 20140144508
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 29, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Publication number: 20140144497
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Application
    Filed: November 26, 2012
    Publication date: May 29, 2014
    Applicant: International Business Machines Corporation
    Inventors: Jeehwan Kim, David B. Mitzi, Byungha Shin, Teodor K. Todorov, Mark T. Winkler
  • Publication number: 20140137943
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 22, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Publication number: 20140124011
    Abstract: Low-temperature sulfurization/selenization heat treatment processes for photovoltaic devices are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A substrate is provided that is either (i) formed from an electrically conductive material or (ii) coated with at least one layer of a conductive material. A chalcogenide absorber layer is formed on the substrate. A buffer layer is formed on the absorber layer. A transparent front contact is formed on the buffer layer. The device is contacted with a chalcogen-containing vapor having a sulfur and/or selenium compound under conditions sufficient to improve device performance by filling chalcogen vacancies within the absorber layer or the buffer layer or by passivating one or more of grain boundaries in the absorber layer, an interface between the absorber layer and the buffer layer and an interface between the absorber layer and the substrate.
    Type: Application
    Filed: January 13, 2014
    Publication date: May 8, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Patent number: 8617915
    Abstract: In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: December 31, 2013
    Assignee: International Business Machines Corporation
    Inventors: Supratik Guha, David B. Mitzi, Teodor K. Todorov, Kejia Wang