Patents by Inventor David B. Mitzi

David B. Mitzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8613973
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: December 24, 2013
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Patent number: 8574953
    Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: November 5, 2013
    Assignee: International Business Machines Corporation
    Inventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
  • Publication number: 20130199594
    Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.
    Type: Application
    Filed: February 3, 2012
    Publication date: August 8, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, Yves C. Martin, David B. Mitzi, Robert L. Sandstrom, Theodore G. van Kessel
  • Publication number: 20130199597
    Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.
    Type: Application
    Filed: September 5, 2012
    Publication date: August 8, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, Yves C. Martin, David B. Mitzi, Robert L. Sandstrom, Theodore G. van Kessel
  • Publication number: 20120279565
    Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Publication number: 20120222730
    Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 6, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Oki Gunawan, Jeehwan Kim, David B. Mitzi, Devendra K. Sadana, Teodor K. Todorov
  • Publication number: 20120126216
    Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
    Type: Application
    Filed: January 31, 2012
    Publication date: May 24, 2012
    Applicant: International Business Machines Corporation
    Inventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
  • Publication number: 20120070936
    Abstract: In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.
    Type: Application
    Filed: June 3, 2011
    Publication date: March 22, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, David B. Mitzi, Teodor K. Todorov, Kejia Wang
  • Patent number: 8134150
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: March 13, 2012
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Patent number: 8123997
    Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: February 28, 2012
    Assignee: International Business Machines Corporation
    Inventors: Patrick W DeHaven, David R Medeiros, David B Mitzi
  • Patent number: 8053772
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: November 8, 2011
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Publication number: 20110240932
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Application
    Filed: May 20, 2011
    Publication date: October 6, 2011
    Applicant: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Patent number: 7999255
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: August 16, 2011
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Patent number: 7964481
    Abstract: An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.
    Type: Grant
    Filed: April 14, 2009
    Date of Patent: June 21, 2011
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Christopher B. Murray, Dmitri V. Talapin
  • Patent number: 7960726
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: June 14, 2011
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Publication number: 20110097496
    Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: March 5, 2010
    Publication date: April 28, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Publication number: 20110094557
    Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: October 27, 2009
    Publication date: April 28, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Patent number: 7928419
    Abstract: The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: April 19, 2011
    Assignee: International Business Machines Corporation
    Inventors: Kailash Gopalakrishnan, David B. Mitzi, Rohit S. Shenoy
  • Patent number: 7838403
    Abstract: Techniques for fabricating a photovoltaic device having a chalcopyrite absorber layer, such as a copper indium gallium selenide/sulfide (CIGSS) absorber layer, are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A precursor solution of metal chalcogenide dissolved in hydrazine or a hydrazine-like solvent is formed. Spray pyrolysis in an inert environment is used to deposit the precursor solution onto a substrate to form a metal chalcogenide layer on the substrate. A buffer layer is formed adjacent to a side of the metal chalcogenide layer opposite the substrate. A transparent conductive contact is formed adjacent to a side of the buffer layer opposite the metal chalcogenide layer.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: November 23, 2010
    Assignee: International Business Machines Corporation
    Inventors: Wei Liu, David B. Mitzi
  • Patent number: 7833825
    Abstract: A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: November 16, 2010
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Simone Raoux