Abstract: An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first transistor, having a drain region coupled to and I/O stage of the mixed voltage integrated circuit, and a gate region coupled to the mixed voltage integrated circuit's low power supply. The second NMOS transistor of the pair is merged into the same active area as the first transistor and has a gate region and a source region coupled to the ground plane of the mixed voltage integrated circuit. The source region of the first transistor and the drain region of the second transistor are constructed of a shared NMOS diffusion region.

Abstract: An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least one pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first transistor, having a drain region coupled to an I/O stage of the mixed voltage integrated circuit, and a gate region coupled to the mixed voltage integrated circuit's low power supply. The protection device also includes a second NMOS transistor, merged into the same active area as the first transistor, having a gate region and source region coupled to the ground plane of the mixed voltage integrated circuit. The drain region of the second transistor and the source region of the first transistor is constructed by a shared NMOS diffusion region. This shared diffusion region also constructs the common node coupling the source region of the first transistor to the drain region of the second.

Abstract: An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least one pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first transistor, having a drain region coupled to an I/O stage of the mixed voltage integrated circuit, and a gate region coupled to the mixed voltage integrated circuit's low power supply. The protection device also includes a second NMOS transistor, merged into the same active area as the first transistor, having a gate region and source region coupled to the ground plane of the mixed voltage integrated circuit. The drain region of the second transistor and the source region of the first transistor is constructed by a shared NMOS diffusion region. This shared diffusion region also constructs the common node coupling the source region of the first transistor to the drain region of the second.