Patents by Inventor David Kapolnek

David Kapolnek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060096431
    Abstract: The present invention provides a die holder with one or more pre-located recessed areas or voids into which cutting dies can be quickly and easily inserted and secured. The die holder mounts quickly to the cylinder, and can be quickly removed for alternative operations. The die holder can be made according to the operator needs for different types, sizes and positions of dies. Unused voids can be filled with ‘blank’ blocks to achieve a consistent or uniform surface height for the full 360 degree area of the die cylinder. The present invention further provides a removable scrap control apparatus that is not attached permanently to the die cylinder on which it is used, which permits the use of a multiple blade die or a plurality of single blade dies on the same die cylinder without requiring permanent holes, slots or other means to accommodate the scrap control apparatus on the die cylinder or anvil cylinder.
    Type: Application
    Filed: October 7, 2005
    Publication date: May 11, 2006
    Inventors: Paul Kapolnek, Timothy Kapolnek, David Kapolnek, Michael Musgrave, Diane Peters, Kent Troxel
  • Patent number: 6620709
    Abstract: A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
    Type: Grant
    Filed: April 11, 2002
    Date of Patent: September 16, 2003
    Assignee: Cree, Inc.
    Inventors: David Kapolnek, Brian Thibeault
  • Patent number: 6498111
    Abstract: A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
    Type: Grant
    Filed: August 23, 2000
    Date of Patent: December 24, 2002
    Assignee: Cree Lighting Company
    Inventors: David Kapolnek, Brian Thibeault
  • Publication number: 20020173165
    Abstract: A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
    Type: Application
    Filed: April 11, 2002
    Publication date: November 21, 2002
    Applicant: CREE LIGHTING COMPANY
    Inventors: David Kapolnek, Brian Thibeault