Patents by Inventor David L. Dickerson
David L. Dickerson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11912057Abstract: A security device made up of a security film (130) having (i) an array of image elements (103); (ii) an array of focusing elements (106); and (iii) at least one anti-viscid agent (115), is provided. The array of focusing elements and the array of image elements are disposed relative to each other such that a synthetic image is projected by the security film when at least a portion of the array of image elements are viewed through at least a portion of the array of focusing elements. The anti-viscid agent is coupled with the array of focusing elements.Type: GrantFiled: December 27, 2018Date of Patent: February 27, 2024Assignee: Crane & Co., Inc.Inventors: Nancy J. Gettens, Pearl N. Dickerson, Michael McAllister, David L. Peters
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Patent number: 6967146Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: March 11, 2004Date of Patent: November 22, 2005Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20040241957Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride laver and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: March 11, 2004Publication date: December 2, 2004Applicant: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6710420Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: September 11, 2002Date of Patent: March 23, 2004Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6593206Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: February 14, 2002Date of Patent: July 15, 2003Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20030032258Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: September 11, 2002Publication date: February 13, 2003Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20030022459Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: September 11, 2002Publication date: January 30, 2003Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20020089034Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: February 8, 2002Publication date: July 11, 2002Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6406977Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: March 7, 2000Date of Patent: June 18, 2002Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20020070422Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: February 14, 2002Publication date: June 13, 2002Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6372601Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: September 3, 1998Date of Patent: April 16, 2002Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6329267Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: March 7, 2000Date of Patent: December 11, 2001Assignee: Micron Technology, Inc.Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Publication number: 20010012676Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: March 7, 2000Publication date: August 9, 2001Inventors: David L Dickerson, Richard H Lane, Charles H Dennison, Kunal R Parekh, Mark Fischer, John K Zahurak
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Publication number: 20010009798Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: ApplicationFiled: February 9, 2001Publication date: July 26, 2001Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer
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Patent number: 6238999Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.Type: GrantFiled: March 7, 2000Date of Patent: May 29, 2001Assignee: Micron TechnologyInventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
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Patent number: 6103612Abstract: A method for the manufacture of isolated interconnect studs and the structure so produced is provided.Type: GrantFiled: September 2, 1998Date of Patent: August 15, 2000Assignee: Micron Technology, Inc.Inventors: Bradley J. Howard, David L. Dickerson
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Patent number: 5629230Abstract: A semiconductor processing method of forming a field oxide region on a semiconductor substrate includes, a) providing a patterned first masking layer over a desired active area region of a semiconductor substrate, the first masking layer having at least one side edge; b) providing a silicon sidewall spacer over the side edge of the patterned first masking layer, the silicon sidewall spacer having a laterally outward projecting foot portion; c) oxidizing the substrate and the silicon sidewall spacer to form a field oxide region on the substrate; d) stripping the first masking layer from the substrate; and e) providing a gate oxide layer over the substrate. The invention enables taking advantage of process techniques which minimize the size of field oxide bird's beaks without sacrificing upper field oxide topography.Type: GrantFiled: August 1, 1995Date of Patent: May 13, 1997Assignee: Micron Technology, Inc.Inventors: Pierre C. Fazan, Nanseng Jeng, David L. Dickerson