Patents by Inventor David L. Pulfrey

David L. Pulfrey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inverted heterojunction bipolar device having undoped amorphous silicon layer
    Patent number: 5285083
    Abstract: A heterojunction bipolar transistor having base, emitter and undoped amorphous silicon collector regions formed on a crystalline silicon substrate. A p-n junction is formed in the substrate, beneath the collector region. A single such transistor may be configured as a static memory device which may be reversibly switched between stable first and second states by applying a voltage of about 8 to 10 volts to the collector and by selectively applying positive or negative pulses of about .+-.0.75 volts to the base.
    Type: Grant
    Filed: April 27, 1992
    Date of Patent: February 8, 1994
    Assignee: The University of British Columbia
    Inventors: David L. Pulfrey, David D. Shulman, Vladimir Samuilov, Elena Bondarionok, Vasilii Krasnitski, Nickolai Poklonski, Viatcheslav Stelmakh