Abstract: A solar powered lamp configured to function more efficiently at elevated temperatures. The solar powered lamp comprises an electrical storage device disposed in heat transfer proximity to a solar cell array. The electrical storage device is adapted to increase its acceptance of charge, provided by the solar cell array, at elevated temperatures. The solar powered lamp is also configured to permit flow of air through the lamp and to be assembled and disassembled with ease.

Abstract: A solar powered light adapted to be mounted under the eaves of a building, a wall or the like for use in security applications. In a preferred embodiment of the present invention, the solar powered light comprises an adjustable configuration having a lamp with an infrared detector or sensor rotatably mounted thereto and a photovoltaic or solar cell array rotatably disposed at a remote end of an extension arm movably attached to the lamp. Such a flexible arrangement allows the photovoltaic array to be positioned to receive direct sunlight. The sensor activates the solar powered light upon sensing infrared to illuminate the surrounding areas when a presence is sensed and turn it off when a presence is no longer sensed. In accordance with a second embodiment, the solar powered light does not include an infrared detector and provides continuous illumination for a given period of time.

Abstract: A solar powered lamp utilizing cold cathode fluoresecent illumination and means for facilitating same. The solar powered lamp is powered through the utilization of photovoltaic cells which charge a battery for providing power to a cold cathode fluorescent bulb in the absence of sunlight. The cold cathode fluorescent bulb provides increased illumination and a longer lamp life. The solar powered lamp comprises circuitry for converting the low power provided by the battery into an alternating current voltage sufficient to operate the cold cathode fluorescent bulb in order to facilitate a longer lamp life and provide increased illumination. In a preferred embodiment, a lens configured with vertically disposed ribs about its inner surface is disposed about the cold cathode fluorescent lamp, which is vertically disposed within the lamp, to further enhance illumination.

Abstract: A semiconductor device having a thin film silicon-containing active layer and a metallic first electrode is provided with an interfacial metallic layer at an inner surface of a second electrode to increase electrical resistance and thereby reduce shunts adjacent pinhole-type defects of the active layer. The interfacial layer is preferably made of a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum.

Abstract: A solar module of the type having at least two series connected solar cells which each include a transparent front-face electrode, a thin film photovoltaic device, and an aluminum back contact. A nickel film is provided over the aluminum back contact to provide improved resistance to degradation.

Abstract: A thin film photovoltaic module has transparent electrodes on front and back surfaces of a semiconductive layer. In one embodiment, both transparent electrodes pass light to the semiconductive layer for photovoltaic purposes. In another embodiment, the back electrode passes light which enters through the front electrode and is not absorbed by the semiconductive layer, so that the module is selectively transparent to the unabsorbed light. The spectral makeup of the transmitted light is controlled by controlling the optical characteristics of the layers of the module. The index of refraction of the back electrode is a primary source of transmission control, along with the refractive index of the front electrode and the thickness of the semiconductive layer itself. Light transmitted by the module can be used for nonphotovoltaic purposes, such as illuminating the interior of a vehicle or dwelling, or may be directed back into the semiconductive layer by a reflective surface behind the back electrode.

Abstract: A photoconductive device of decreased resistivity is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor. The zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.

Abstract: A thin film solar cell structure having a free metal layer between a transparent conductor front face contact and the front face surface of the actual thin film photovoltaic device. The free metal, preferably tin, may be formed by glow discharge reduction of the transparent conductor surface or by direct deposition of free metal.

Abstract: An improved transparent conductor structure for thin film solar cells comprising a plurality of metallic strip conductors deposited on a transparent conductor and aligned substantially with the principal direction of current flow. The strip conductors preferably originate at an edge of the transparent conductor to which an adjacent cell back conductor is connected and are preferably interconnected along that edge by an additional strip conductor deposited in the same process step.

Abstract: A process for forming microcrystalline silicon material includes the steps of introducing a silicon-containing gas, hydrogen gas and a relatively inert gas into a work environment to form a preselected gas atmosphere, and establishing a glow discharge through the gas atmosphere. A microcrystalline thin film of silicon is formed on a substrate exposed to the discharge. In a preferred embodiment, the power level of the discharge is less than 0.08 watts per square centimeter and the film is deposited at a rate of no more than approximately two angstroms per second. Under these circumstances, the material deposited on the substrate is bombarded by ions of the relatively inert gas, causing the material to form a microcrystalline thin film.

Abstract: Amorphous silicon having a high band gap is formed by glow discharge in an atmosphere containing H.sub.2 and SiH.sub.4 in a ratio of at least approximately 9 to 1. The partial pressure of H.sub.2 and SiH.sub.4 is preferably no more than 1 torr, and the power density of the discharge is preferably no more than 0.08 watts per square centimeter. In the intrinsic form, the material of the present invention has a band gap of approximately 1.95 electron volts (eV). Similar p-type material, formed by adding B.sub.2 H.sub.6 to the gas atmosphere at approximately 500 parts per million (ppm), has a band gap as high as 1.90 eV.