Abstract: A circuit for generating electrical energy is disclosed. The circuit uses a pulse generator in combination with a tube having a cavity therein. The tube can have material therein, such as solid material or fluid passing therethrough. A thyristor or other negative resistance is in series with the tube to increase a change of voltage with respect to time. A resultant energy applied to a load is larger than the energy supplied by the pulse generator due to the absorption of external energy by the tube.

Abstract: A circuit for generating electrical energy is disclosed. The circuit uses a pulse generator in combination with a tube having a cavity therein. The tube can have material therein, such as solid material or fluid passing therethrough. A thyristor or other negative resistance is in series with the tube to increase a change of voltage with respect to time. A resultant energy applied to a load is larger than the energy supplied by the pulse generator due to the absorption of external energy by the tube.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: An apparatus can comprise a circuit and an electrical element coupled to the circuit. The circuit can include a pulse generator to generate an electrical pulse having a first power and a load. The electrical element can be configured to receive heat that is converted into electrical energy by the circuit to apply a second power, greater than the first power, to the load.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: A wearable heater and/or cooler device can include one or more fluid pumps, one or more conduits, and one or more chambers. The fluid pumps can be configured for generating flow of a fluid and comprise inlets and outlets. The conduits have first end portions and second end portions, and the first end portions of the conduits can be coupled to the outlets of the fluid pumps. The chambers can be coupled to second end portions of the conduits such that the fluid flows from the fluid pumps, through the conduits, and into the chambers. The chambers can be configured to enhance the desired thermal transport characteristics of the fluid for thermal transfer adjacent to a wearer's body.

Abstract: An apparatus can comprise a circuit and an electrical element coupled to the circuit. The circuit can include a pulse generator to generate an electrical pulse having a first power and a load. The electrical element can be configured to receive heat that is converted into electrical energy by the circuit to apply a second power, greater than the first power, to the load.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: An apparatus can comprise a DC power supply to generate a DC electrical signal, a pulse generator to generate an electrical pulse, and an electrical element. The pulse generator and the DC power supply can be electrically coupled together. The electrical element can receive the DC electrical signal and the electrical pulse. The electrical element can generate a magnetic field in response to receiving the DC electrical signal and cool in response to receiving the electrical pulse.

Abstract: An apparatus can comprise a circuit and an electrical element coupled to the circuit. The circuit can include a pulse generator to generate an electrical pulse having a first power and a load. The electrical element can be configured to receive heat that is converted into electrical energy by the circuit to apply a second power, greater than the first power, to the load.

Abstract: Embodiments of a high-permittivity, low-leakage energy storage device, such as a capacitor, and methods of making the energy storage device are disclosed. The disclosed device includes electrically conductive first and second electrodes, and a sterically constrained dielectric film disposed between the first and second electrodes. The sterically constrained dielectric film comprises a plurality of polymeric molecules, and at least some of the polymeric molecules are bound to the first electrode. The disclosed device may include an insulative layer between the first electrode and the dielectric film and/or between the second electrode and the dielectric film.

Abstract: Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices.

Abstract: A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

Abstract: A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

Abstract: Embodiments of methods for discharging an entropic energy storage device (EESD) that stores and releases entropic energy are disclosed. Embodiments of circuits including the EESD also are disclosed. The method includes providing a circuit including an EESD charged to a first voltage level, the EESD including first and second electrodes with a dielectric film positioned there between, the dielectric film comprising an entropic material, and the first electrode charged positively or negatively with respect to the second electrode; and applying a reversed polarization electric potential to the first electrode of the EESD in a first mode of operation of the circuit for a discharge period of time, thereby supplying power from the EESD to a load. In some embodiments, the method includes a pulsed discharge of the EESD with alternating discharge and recovery periods of time.

Abstract: Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESDs and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. The memory device may have a stacked architecture with multiple layers of address lines, data lines, and EESDs. The disclosed electroentropic memory devices are operable in ROM and RAM modes. EESDs in the disclosed electroentropic memory devices may include from 2-4096 logic states and/or have a density from 0.001 kb/cm3 to 1024 TB/cm3.