Patents by Inventor David S. Albin
David S. Albin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10134590Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.Type: GrantFiled: March 27, 2017Date of Patent: November 20, 2018Assignee: Alliance for Sustainable Energy, LLCInventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
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Publication number: 20180277365Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.Type: ApplicationFiled: March 27, 2017Publication date: September 27, 2018Inventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
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Patent number: 9583667Abstract: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).Type: GrantFiled: February 27, 2013Date of Patent: February 28, 2017Assignees: Alliance for Sustainable Energy, LLC, Abengoa Solar New Technologies, S.A.Inventors: David S. Albin, Nirav Vora, Sebastian Caparros Jimenez, Joaquin Murillo Gutierrez, Emilio Sanchez Cortezon, Manuel Romero
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Patent number: 9324898Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.Type: GrantFiled: September 25, 2013Date of Patent: April 26, 2016Assignee: Alliance For Sustainable Energy, LLCInventors: David S. Albin, James Neil Johnson, Yu Zhao, Bastiaan Arie Korevaar
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Patent number: 9147793Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.Type: GrantFiled: June 20, 2012Date of Patent: September 29, 2015Assignee: Alliance For Sustainable Energy, LLCInventors: Timothy A. Gessert, Rommel Noufi, Ramesh G. Dhere, David S. Albin, Teresa Barnes, James Burst, Joel N. Duenow, Matthew Reese
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Patent number: 9054264Abstract: Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.Type: GrantFiled: February 27, 2013Date of Patent: June 9, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: David S. Albin, Rommel Noufi
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Publication number: 20150079724Abstract: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).Type: ApplicationFiled: February 27, 2013Publication date: March 19, 2015Inventors: David S. Albin, Nirav Vora, Sebastian Caparros Jimenez, Joaquin Murillo Gutierrez, Emilio Sanchez Cortezon
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Publication number: 20140134786Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.Type: ApplicationFiled: June 20, 2012Publication date: May 15, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Timothy A. Gessert, Rommel Noufi, Ramesh G. Dhere, David S. Albin, Teresa Barnes, James Burst, Joel N. Duenow, Matthew Reese
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Publication number: 20140083505Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.Type: ApplicationFiled: September 25, 2013Publication date: March 27, 2014Applicants: First Solar, Inc., Alliance for Sustainable Energy, LLCInventors: David S. ALBIN, James Neil JOHNSON, Yu ZHAO, Bastiaan Arie KOREVAAR
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Patent number: 5441897Abstract: A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.Type: GrantFiled: February 16, 1994Date of Patent: August 15, 1995Assignee: Midwest Research InstituteInventors: Rommel Noufi, Andrew M. Gabor, John R. Tuttle, Andrew L. Tennant, Miguel A. Contreras, David S. Albin, Jeffrey J. Carapella
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Patent number: 5436204Abstract: A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z.Type: GrantFiled: August 22, 1994Date of Patent: July 25, 1995Assignee: Midwest Research InstituteInventors: David S. Albin, Jeffrey J. Carapella, John R. Tuttle, Miguel A. Contreras, Andrew M. Gabor, Rommel Noufi, Andrew L. Tennant
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Patent number: 5356839Abstract: Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.Type: GrantFiled: April 12, 1993Date of Patent: October 18, 1994Assignee: Midwest Research InstituteInventors: John R. Tuttle, Miguel A. Contreras, Rommel Noufi, David S. Albin