Abstract: An apparatus for bipolar radio frequency ablation of heart tissue includes a flexible epicardial lead having an interior surface along a portion thereof comprising an electrically conductive surface to be placed in contact with tissue to be ablated. Additionally, the epicardial lead includes an integral fastener disposed proximate a distal end thereof and a sliding lock collar having an aperture therein through which said epicardial lead passes. A complementary fastener may be secured thereto for engaging the fastener of said epicardial lead, thereby securing said lead in place around tissue to be ablated. The apparatus further includes an endocardial ablating lead placed in the left atrial chamber via transfemoral insertion for conduction of radio frequency energy between the ablating lead and the ablating surface of the epicardial lead.

Abstract: The compass system of the present invention utilizes an improved calibration route in which a processing circuit of the compass recalibrates the compass each time three data points are obtained from a magnetic field sensor that meet predetermined criteria. One such criterion is that the three data points define corners of a triangle that is substantially non-obtuse. When three data points have been obtained that define a triangle meeting this criterion, the processing circuit calculates a center point for a circle upon which all three data points lie by solving the equation x2+y2+Ax+By+C=0 for A, B, and C, using the coordinate values (x,y) for the three data points and defining the center point as (?A/2, ?B/2).

Abstract: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region.

Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.

Abstract: The compass system of the present invention utilizes an improved calibration routine in which a processing circuit of the compass recalibrates the compass each time three data points are obtained from a magnetic field sensor that meet predetermined criteria. One such criterion is that the three data points define corners of a triangle that is substantially non-obtuse. When three data points have been obtained that define a triangle meeting this criterion, the processing circuit calculates a center point for a circle upon which all three data points lie by solving the equation x2+y2+Ax+By+C=0 for A, B, and C, using the coordinate values (x,y) for the three data points and defining the center point as (?A/2, ?B/2).

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A passive isolator may fit between two serial network cables to convert a standard serial network to a serial network suitable for use in hazardous environments.

Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

Abstract: A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.

Abstract: The compass system of the present invention utilizes an improved calibration routine in which a processing circuit of the compass recalibrates the compass each time three data points are obtained from a magnetic field sensor that meet predetermined criteria. One such criterion is that the three data points define corners of a triangle that is substantially non-obtuse. When three data points have been obtained that define a triangle meeting this criterion, the processing circuit calculates a center point for a circle upon which all three data points lie by solving the equation x2+y2+Ax+By+C=0 for A, B, and C, using the coordinate values (x,y) for the three data points and defining the center point as (?A/2, ?B/2).

Abstract: A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

Abstract: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. One or more semiconductor light emitting devices are mounted in the cavity. A cap having an aperture is configured to matingly attach to the solid metal block adjacent the first metal face such that the aperture is aligned to the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits, optical coupling media, recesses and/or meniscus control regions also may be provided in the package. Related packaging methods also may be provided.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract: A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket passivation layer over the epitaxial layers and ohmic contacts of a diode, depositing a photoresist layer over the blanket passivation layer, opening a via through the photoresist above the ohmic contacts and on the blanket passivation layer, removing the portion of the blanket passivation layer defined by the via to expose the surface of the ohmic contact, depositing a metal layer on the remaining photoresist, and on the exposed portion of the ohmic contact defined by the via, and removing the remaining photoresist to thereby concurrently remove any metal on the photoresist and to thereby establish a metal bond pad on the ohmic contact in the via.

Abstract: The compass system of the present invention utilizes an improved calibration routine in which a processing circuit of the compass recalibrates the compass each time three data points are obtained from a magnetic field sensor that meet predetermined criteria. One such criterion is that the three data points define corners of a triangle that is substantially non-obtuse. When three data points have been obtained that define a triangle meeting this criterion, the processing circuit calculates a center point for a circle upon which all three data points lie by solving the equation x2+y2+Ax+By+C=0 for A, B, and C, using the coordinate values (x,y) for the three data points and defining the center point as (?A/2, ?B/2).

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.

Abstract: A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.

Abstract: A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.