Abstract: A micromachined switch is provided including a base substrate, a bond pad on the base substrate, a cantilever arm connected to the bond pad, the cantilever arm having a conductive via from the bond pad, a first actuation electrode on the base substrate, and a second actuation electrode on the cantilever arm connected to the bond pad by way of the conductive via, positioned such that an actuation voltage applied between the first actuation electrode and the second actuation electrode will deform the cantilever arm, wherein the first actuation electrode is facing a side of the cantilever arm opposite the second actuation electrode.

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract: A micromachined switch is provided including a base substrate, a bond pad on the base substrate, a cantilever arm connected to the bond pad, the cantilever arm having a conductive via from the bond pad, a first actuation electrode on the base substrate, and a second actuation electrode on the cantilever arm connected to the bond pad by way of the conductive via, positioned such that an actuation voltage applied between the first actuation electrode and the second actuation electrode will deform the cantilever arm, wherein the first actuation electrode is facing a side of the cantilever arm opposite the second actuation electrode.

Abstract: Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.

Abstract: An integrated Micro-Electro-Mechanical Systems (MEMS) filter includes an insulating substrate bonded to a base substrate such that at least a portion of the insulating substrate is separated from the base substrate by a gap, the insulating substrate having a first side and a second side, an inductive element having a coil, wherein the coil of the inductive element is on the insulating substrate, and a capacitive element having two conductive plates, wherein one of the two conductive plates is on the insulating substrate.

Abstract: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 ?m band. Detection of more than two wavelengths may be achieved by proper scaling.

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract: An oscillator having a quartz resonator, and a base wafer containing active electronics, wherein the quartz resonator is bonded directly to the base wafer and subsequently hermetically capped.

Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.

Abstract: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 ?m band. Detection of more than two wavelengths may be achieved by proper scaling.

Abstract: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

Abstract: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract: Disclosed are methods for fabricating a micro-electro-mechanical switch. The switch has a cantilever arm disposed on a substrate that can be moved in orthogonal directions for latching and unlatching. For latching, the cantilever arm is moved back by a comb-drive actuator and then pulled down by electrodes disposed on the substrate and the cantilever arm. The comb-drive actuator switch is then released and the cantilever arm moves forward to be captured by a dove-tail structure on the substrate. When the voltage is removed, the cantilever arm is held in place by the dove-tail structure. The switch is unlatched by actuating the comb-drive actuator to move the cantilever arm away from the dove-tail structure. The cantilever arm will then pop up once it is released from the dove-tail structure.

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract: Embodiments of the present invention are directed to apparatuses and methods of making a micromachined resonator gyroscope, e.g. a disc resonator gyro (DRG), including one or more of the following novel features. Embodiments of the invention may comprise a triple-wafer stack gyroscope with an all fused quartz (or all silicon) construction for an electrical baseplate, resonator and vacuum cap. This can yield superior thermal stability over prior art designs. A typical resonator embodiment may include a centrally anchored disc with high aspect-ratio in-plane electrostatic drive and sense electrodes to create large capacitance. A silicon sacrificial layer may be employed for attaching a quartz resonator wafer to a quartz handle wafer for high aspect-ratio etching. In addition, embodiments of the invention may comprise a low thermal stress, wafer-level vacuum packaged gyroscope with on-chip getter. An ultra-thin conductive layer deposited on the quartz resonator may also be utilized for high Q.

Abstract: Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.