Abstract: A beam delivery system is provided that includes a beam delivery photonic integrated circuit. The beam delivery photonic integrated circuit includes one or more optical inputs; a plurality of waveguide outputs; and a plurality of beam paths. Each beam path connects one of the plurality of waveguide outputs to at least one of the optical inputs. The plurality of waveguide outputs are configured to emit a plurality of parallel beams. The beam delivery photonic integrated circuit is on a chip. The beam delivery system further includes a telecentric optical relay assembly. The telecentric optical relay assembly is configured to receive the plurality of parallel beams provided by the waveguide outputs and focus each received beam on a corresponding one of a plurality of positions of an atomic object confinement apparatus in a telecentric manner.

Abstract: An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.

Abstract: An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.

Abstract: An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.

Abstract: An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.

Abstract: Construction systems and methods for anchoring a structural member of a building to a base member of a building including one or more anchoring devices, each anchoring device having a first portion and a second portion. The first portion of each anchoring device is fixedly attached to the structural member and the second portion of each anchoring device is fixedly attached to the base member. Each anchoring device preferably including a fiber composite material.

Abstract: A method for fabrication of ceramic tantalum nitride and improved structures based thereon is disclosed. According to the disclosed method, an ionized metal plasma (“IMP”) tool is used to create a plasma containing tantalum ions where the plasma is sustained by a mixture of nitrogen and argon gases. The percentage of nitrogen partial flow in the mixture of gases is adjusted so as to result in a layer of tantalum nitride with a nitrogen content of at least 30%. With a nitrogen content of at least 30%, the tantalum nitride becomes ceramic. The ceramic tantalum nitride presents a number of advantages. For example, the fabrication of ceramic tantalum nitride can be easily incorporated into fabrication of semiconductor chips using copper as the interconnect metal. Also, ceramic tantalum nitride can be used as an effective etch stop layer.

Abstract: An undercarriage for a mobile ladder stand or other similar warehouse apparatus includes a pair of retractable wheels located at the rear of the undercarriage frame and a pair of retractable wheels located at the middle of the undercarriage frame. When the wheels are retracted, the structure is supported by a pair of legs and foot pads located at the front of the undercarriage frame and another pair of legs and foot pads located at the rear of the undercarriage frame. When the wheels are extended, the structure is supported on the ground surface for rolling by the middle and rear wheels. The rear wheels are preferably mounted on swivel casters and the diameter of the middle pair of wheels is preferably greater than the diameter of the rear pair of wheels.

Abstract: Construction systems and methods for anchoring a structural member of a building to a base member of a building including one or more anchoring devices, each anchoring device having a first portion and a second portion. The first portion of each anchoring device is fixedly attached to the structural member and the second portion of each anchoring device is fixedly attached to the base member. Each anchoring device preferably including a fiber composite material.

Abstract: A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.

Abstract: A combined stepped structure and lifting mechanism includes a base and a framework secured to the base, the framework having a pair of spaced apart vertical tubes rising upwardly from the base. A ladder is incorporated in the framework and a vertical track assembly is disposed between the vertical tubes and includes a pair of tubular members connected together. A trolley is rollably mounted for movement along one of the tubular members. A lifting tray assembly is connected for movement with the trolley. A drive system is operably connected to the trolley and driven by a DC motor and gearbox unit mounted to a bottom end of the vertical track assembly to selectively move the lifting tray assembly upwardly and downwardly along the vertical track assembly.

Abstract: A method for fabrication of ceramic tantalum nitride and improved structures based thereon is disclosed. According to the disclosed method, an ionized metal plasma (“IMP”) tool is used to create a plasma containing tantalum ions where the plasma is sustained by a mixture of nitrogen and argon gases. The percentage of nitrogen partial flow in the mixture of gases is adjusted so as to result in a layer of tantalum nitride with a nitrogen content of at least 30%. With a nitrogen content of at least 30%, the tantalum nitride becomes ceramic. The ceramic tantalum nitride presents a number of advantages. For example, the fabrication of ceramic tantalum nitride can be easily incorporated into fabrication of semiconductor chips using copper as the interconnect metal. Also, ceramic tantalum nitride can be used as an effective etch stop layer.

Abstract: A method for fabrication of ceramic tantalum nitride and improved structures based thereon is disclosed. According to the disclosed method, an ionized metal plasma (“IMP”) tool is used to create a plasma containing tantalum ions where the plasma is sustained by a mixture of nitrogen and argon gases. The percentage of nitrogen partial flow in the mixture of gases is adjusted so as to result in a layer of tantalum nitride with a nitrogen content of at least 30%. With a nitrogen content of at least 30%, the tantalum nitride becomes ceramic. The ceramic tantalum nitride presents a number of advantages. For example, the fabrication of ceramic tantalum nitride can be easily incorporated into fabrication of semiconductor chips using copper as the interconnect metal. Also, ceramic tantalum nitride can be used as an effective etch stop layer.

Abstract: A garment designed to be worn about the torso of a wearer, wherein the garment is made from a fabric cut according to a pattern having a plurality of edges which are joined together to form at least one seam on a first side of the garment, a seamless second side of the garment, two arm openings through which the wearer's arms may extend, and a neck opening through which the wearer's neck may extend.

Abstract: A portable time of flight mass spectrometer using plasma desorption sample ionization. The sample is deposited onto a sample surface by condensing a sample gas stream onto the surface. While the instrument is evacuated, the sample surface is cooled and a sample gas stream is injected into the instrument near the sample surface causing a portion of the gas stream to condense on the sample surface and the remainder to be removed by the evacuation pump. A mass spectrometer having a linear geometry is disclosed. A reflective geometry is also disclosed wherein the flight path length is maximized by placing the fission source between the sample surface and a single detector. A collector surface for receiving start signal-generating fission fragments is sized to insure equal collection of start signal fragments and sample ionizing fragments. An area on the sample surface which is occluded by the fission source is compensated for by appropriate sizing of the fission source and the collector surface.

Abstract: A portable time of flight mass spectrometer using plasma desorption sample ionization. The sample is deposited onto a sample surface by condensing a sample gas stream onto the surface. While the instrument is evacuated, the sample surface is cooled and a sample gas stream is injected into the instrument near the sample surface causing a portion of the gas stream to condense on the sample surface and the remainder to be removed by the evacuation pump. A mass spectrometer having a linear geometry is disclosed. A reflective geometry is also disclosed wherein the flight path length is maximized by placing the fission source between the sample surface and a single detector. A collector surface for receiving start signal-generating fission fragments is sized to insure equal collection of start signal fragments and sample ionizing fragments. An area on the sample surface which is occluded by the fission source is compensated for by appropriate sizing of the fission source and the collector surface.