Abstract: A method for detecting a three-dimensional object in a two-dimensional image includes: inputting the two-dimensional image into an object detection model, and obtaining a resulting detection depth dataset; obtaining, based on the detection depth dataset, coordinate sets of a number of points-of-interest each associated with a to-be-detected object in a 3D camera centered coordinate system; and converting the coordinate sets of the number of points-of-interest in the 3D camera centered coordinate system into a number of coordinate sets in a 3D global coordinate system. Embodiments of this disclosure may be utilized in the field of self-driving cars with roadside traffic cameras.

Abstract: Techniques are described with regard to managing transaction size during a database replication process. An associated computer-implemented method includes identifying each of at least one transaction associated with at least one source database stored in a replication capture memory, identifying at least one potential excessive memory transaction by applying, via at least one machine learning pattern detection model, pattern detection to each of the at least one transaction stored in the replication capture memory, and constructing at least one compact data unit associated with each of the at least one potential excessive memory transaction. The computer-implemented method further includes facilitating compact data unit transmission to a replication apply server system in order to replicate the at least one compact data unit associated with each of the at least one potential excessive memory transaction to at least one target database via a replication apply server application.

Abstract: Techniques are described with regard to managing transaction size during a database replication process. An associated computer-implemented method includes identifying each of at least one transaction associated with at least one source database stored in a replication capture memory, identifying at least one potential excessive memory transaction by applying, via at least one machine learning pattern detection model, pattern detection to each of the at least one transaction stored in the replication capture memory, and constructing at least one compact data unit associated with each of the at least one potential excessive memory transaction. The computer-implemented method further includes facilitating compact data unit transmission to a replication apply server system in order to replicate the at least one compact data unit associated with each of the at least one potential excessive memory transaction to at least one target database via a replication apply server application.

Abstract: A method for detecting a three-dimensional object in a two-dimensional image includes: inputting the two-dimensional image into an object detection model, and obtaining a resulting detection depth dataset; obtaining, based on the detection depth dataset, coordinate sets of a number of points-of-interest each associated with a to-be-detected object in a 3D camera centered coordinate system; and converting the coordinate sets of the number of points-of-interest in the 3D camera centered coordinate system into a number of coordinate sets in a 3D global coordinate system. Embodiments of this disclosure may be utilized in the field of self-driving cars with roadside traffic cameras.

Abstract: An organic semiconductor crystalline film and weak oriented epitaxy growth preparation method thereof. The organic semiconductor crystalline film is a n-type semiconductor or a p-type semiconductor, and organic semiconductor crystal molecules in the organic semiconductor crystalline film are oriented in a stand-up manner on the ordered substrate, and have an oriented relationship with the ordered substrate. The organic semiconductor crystalline film prepared by the present invention is useful for organic transistor and organic phototransistor devices. The method of the present invention can control the high carrier mobility direction of organic semiconductor crystals to have ordered orientation in the film, enhance contacts between crystals, improve mechanical strength and micro-machining property of the film, and give a high carrier mobility. The carrier mobility of weak oriented epitaxially grown film of the present invention is 0.

Abstract: This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Abstract: A semiconductor integrated circuit (IC) acts as a controller of a heating-controlled device or appliance. A heating body has a positive temperature coefficient and acts as both a heating element and a temperature sensor. A Silicon-Controlled Rectifier (SCR) switches AC current to the heating body to increase its temperature. When the SCR switches off, temperature sensing is performed using a sampling resistor, isolation diode, voltage comparator, and switch for a low-voltage DC supply are formed on an integrated circuit that has a first circuit branch and a second circuit branch. A compensation diode and a compensation resistor can be added in parallel to reference resistors. The compensation diode compensates for the forward voltage drop of the isolation diode that would otherwise create an inaccurate temperature measurement. The diodes have the same temperature response, allowing for a more accurate temperature measurement over a full temperature range of the sensorless appliance.

Abstract: A semiconductor integrated circuit (IC) acts as a controller of a heating-controlled device or appliance. A heating body has a positive temperature coefficient and acts as both a heating element and a temperature sensor. A Silicon-Controlled Rectifier (SCR) switches AC current to the heating body to increase its temperature. When the SCR switches off, temperature sensing is performed using a sampling resistor, isolation diode, voltage comparator, and switch for a low-voltage DC supply are formed on an integrated circuit that has a first circuit branch and a second circuit branch. A compensation diode and a compensation resistor can be added in parallel to reference resistors. The compensation diode compensates for the forward voltage drop of the isolation diode that would otherwise create an inaccurate temperature measurement. The diodes have the same temperature response, allowing for a more accurate temperature measurement over a full temperature range of the sensorless appliance.

Abstract: This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Abstract: An organic semiconductor crystalline film and weak oriented epitaxy growth preparation method thereof. The organic semiconductor crystalline film is a n-type semiconductor or a p-type semiconductor, and organic semiconductor crystal molecules in the organic semiconductor crystalline film are oriented in a stand-up manner on the ordered substrate, and have an oriented relationship with the ordered substrate. The organic semiconductor crystalline film prepared by the present invention is useful for organic transistor and organic phototransistor devices. The method of the present invention can control the high carrier mobility direction of organic semiconductor crystals to have ordered orientation in the film, enhance contacts between crystals, improve mechanical strength and micro-machining property of the film, and give a high carrier mobility. The carrier mobility of weak oriented epitaxially grown film of the present invention is 0.