Abstract: A computing system includes data encryption in the data path between a data source and data storage devices. The data encryption may utilize a key which is derived at least in part from an identification code stored in a nonvolatile memory. The key may also be derived at least in part from user input to the computer.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A method and system are described for generating reference tables in object code which specify the addresses of branches, routines called, and data references used by routines in the code. In a suitably equipped processing system, the reference tables can be passed to a memory management processor which can open the appropriate memory pages to expedite the retrieval of data referenced in the execution pipeline. The disclosed method and system create such reference tables at the beginning of each routine so that the table can be passed to the memory management processor in a suitably equipped processor. Resulting object code also allows processors lacking a suitable memory management processor to skip the reference table, preserving upward compatibility.

Abstract: Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: A master memory controller comprises a plurality of memory communication channels. At least one of the memory communication channels is used to communicate with one or more slave memory controllers. The master and slave memory controllers can operate in a parallel operation mode to communicate with a plurality of memory devices coupled to the memory communication channels of each memory controller.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: Solid state storage devices and methods for operation of solid state storage devices are disclosed. In one such method, a master memory controller is comprised of a plurality of memory communication channels. At least one of the memory communication channels is used to communicate with one or more slave memory controllers. The master and slave memory controllers can operate in a parallel operation mode to communicate with a plurality of memory devices coupled to the memory communication channels of each memory controller.

Abstract: Embodiments of the present invention provide local checkpoint memories that are closely coupled to the processor of a computing system used during normal operation. The checkpoint memory may be coupled to the processor through a peripheral bus or a memory bus. The checkpoint memory may be located on a same semiconductor substrate or circuit board as the processor. The checkpoint memory may be located on a same semiconductor substrate as a main memory used by the processor during normal operation. The checkpoint memory may be included in a memory hub configuration, with a checkpoint memory hub provided for access to the checkpoint memory.

Abstract: Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

Abstract: Methods and devices for treating female urinary incontinence by injecting bulking material into the female urethral wall. Some devices include a handle, an elongate member attached to the handle, and a vacuum generating syringe removably secured to the handle. The elongate member can include a distal portion projecting distally from the handle, the distal portion having a wide proximal region, a narrowing shoulder, and a narrow distal region. The elongate member can include one or more vacuum ports on either side of the shoulder region. The shoulder can include a distally facing needle aperture allowing passage of a needle for injecting bulking agent. A rotatable connection between the elongate member and the handle facilitates rotatable positioning of the elongate member to permit injection of bulking material at different locations around the urethral wall.

Abstract: Embodiments of the present invention provide local checkpoint memories that are closely coupled to the processor of a computing system used during normal operation. The checkpoint memory may be coupled to the processor through a peripheral bus or a memory bus. The checkpoint memory may be located on a same semiconductor substrate or circuit board as the processor. The checkpoint memory may be located on a same semiconductor substrate as a main memory used by the processor during normal operation. The checkpoint memory may be included in a memory hub configuration, with a checkpoint memory hub provided for access to the checkpoint memory.

Abstract: Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

Abstract: A computing system includes data encryption in the data path between a data source and data storage devices. The data encryption may utilize a key which is derived at least in part from an identification code stored in a nonvolatile memory. The key may also be derived at least in part from user input to the computer.

Abstract: Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

Abstract: A non-volatile hard disk drive cache system is coupled between a processor and a hard disk drive. The cache system includes a control circuit, a non-volatile memory and a volatile memory. The control circuit causes a subset of the data stored in the hard disk drive to be written to the non-volatile memory. In response to a request to read data from the hard disk drive, the control circuit first determines if the requested read data are stored in the non-volatile memory. If so, the requested read data are provided from the non-volatile memory. Otherwise, the requested read data are provided from the hard disk drive. The volatile memory is used as a write buffer and to store disk access statistics, such as the disk drive locations that are most frequently read, which are used by the control circuit to determine which data to store in the non-volatile memory.