Abstract: A system for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaics devices and photovoltaic cells made thereby is described.

Abstract: A system for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaics devices and photovoltaic cells made thereby is described.

Abstract: A solar device and a process for preparing a self-cleaning coating on the solar device is disclosed, the process comprises providing a coating composition, adding to the coating composition nanocrystals of a photoactive material, and applying the mixture of coating composition and photoactive material to a surface of a substrate at an elevated temperature, to deposit a self-cleaning coating on the surface of the substrate. The solar device comprises a solar energy conversion device, including a transparent substrate, and a self-cleaning coating adhered to a surface of the substrate.

Abstract: Apparatus and a process for applying a metal oxide coating to a substrate, the process comprising the steps of providing a solution of a metal compound in a solvent, spraying the solution onto the surface of a hot substrate, and pyrolyzing the solution to form a coating of metal oxide on the substrate.

Abstract: A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Abstract: A method and apparatus for depositing a homogeneous pyrolytic coating on substrates. These coatings would include insulator, metal and semiconductor films on a glass substrate. The apparatus controls the size and distribution of the spray droplets to improve the uniformity of the coatings.

Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Abstract: A method for producing organo metal chlorides directly from molten metal. The organo metal chlorides are formed by contacting an organo chloride directly with a metal melt. The preferred method includes the use of indium as the metal and methyl chloride as the organo chloride. The direct contact of the methyl chloride with the indium metal results in the production of dimethyl indium chloride or methyl indium dichloride depending on the contacting time and efficiency of the process. The resulting products are suitable for use as a precursor gas for chemical vapor deposition processes. Additionally, activator compounds such as oxides or halides are optionally added to the metal melt to enhance the reaction rate.

Abstract: A method for producing organo metal chlorides directly from molten metal. The organo metal chlorides are formed by contacting an organo chloride directly with a metal melt. The preferred method includes the use of indium as the metal and methyl chloride as the organo chloride. The direct contact of the methyl chloride with the indium metal results in the production of dimethyl indium chloride or methyl indium dichloride depending on the contacting time and efficiency of the process. The resulting products are suitable for use as a precursor gas for chemical vapor deposition processes. Additionally, activator compounds such as oxides or halides are optionally added to the metal melt to enhance the reaction rate.

Abstract: A method for the preparation of layered electrodes, including ultramicroelectrodes, through application of a thin film coating of an inorganic material to a conductor by use of chemical vapor deposition. The chemical vapor deposition techniques of the present invention provide a layered electrode that is efficiently and effectively manufactured in a standard reaction chamber at atmospheric pressure. The preferred conductors are carbon fibers and foams, and metal (platinum or gold) wires, meshes and foams. The precursors for the thin film deposition include those that yield thin-films of insulators, semiconductors, metals, and superconductors. During the chemical vapor deposition process, a thin film coating is formed on the conductor by the pyrolytic decomposition of the precursor vapor at the surface of the heated conductor. The hardness and rigidity of the thin film layer imparts durability and structure to the fragile and flexible conductors without significantly increasing the size of the device.