Abstract: Methods of making capacitors are disclosed that comprise forming a dielectric layer over a substrate with a first electrode or a bare metallic foil, depositing a top conductive layer over the dielectric layer, and annealing the dielectric layer and the top conductive layer wherein the foil or first electrode, the dielectric, and the conductive layer form a capacitor.

Abstract: A process for producing high temperature superconductor (HTS) mini-filters or coils in which the high temperature superconductor films are deposited on a layer of CeO2 on a substrate results in higher yields of mini-filters or coils.

Abstract: This invention relates to a process of forming multilayered thallium-containing superconducting composites, wherein a first thallium-containing superconducting layer, an intermediate thallium-containing oxide layer and a second thallium-containing superconducting layer are successively deposited on a substrate by a vapor phase process by controlling the heating temperature, pressure of oxidizing gas and thallium vapor pressure during post-deposition annealing of the superconducting films.

Abstract: In-situ process are provided for 1) depositing on a substrate a crystalline thin film of a high temperature superconducting oxide by exposing the back surface of the substrate, i.e., the surface of the substrate opposite the surface on which the thin film is deposited, to radiation from a direct radiant heat source, thereby heating the substrate to the desired growth temperature, and maintaining the radiation and thereby the desired growth temperature during the deposition of the thin film, and 2) depositing a crystalline thin film of high temperature superconducting oxides onto both the front and back surfaces of a substrate.

Abstract: An in-situ process for preparing thin films which contain relatively volatile and involatile oxides is disclosed, in particular, crystalline thin films of oxides of conductors, superconductors or ferroelectric materials, wherein separate sources of the relatively volatile and involatile oxides during depositon of the thin film are employed.