Patents by Inventor Deepak Mahulikar

Deepak Mahulikar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060283095
    Abstract: A method of manufacturing a colloidal silica dispersion, by dissolving a fumed silica in an aqueous solvent having an alkali metal hydroxide to produce an alkaline silicate solution; removing the alkali metal via ion exchange to produce a silicic acid solution; adjusting the temperature, concentration and pH of the silicic acid solution to values sufficient to initiate nucleation and particle growth at elevated temperatures; and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion. The colloidal silica particles in the colloidal silica dispersion have a mean particle size about 2 nm to about 100 nm. Also provided is a method of chemical mechanical polishing a surface of a substrate by contacting the substrate and a composition having a plurality of colloidal silica particles according to the present invention and a medium for suspending the particles. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
    Type: Application
    Filed: June 15, 2005
    Publication date: December 21, 2006
    Inventors: Deepak Mahulikar, Yuhu Wang
  • Publication number: 20060124593
    Abstract: A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
    Type: Application
    Filed: May 31, 2005
    Publication date: June 15, 2006
    Inventors: Gert Moyaerts, Ken Delbridge, Nichole Koontz, Saeed Mohseni, Gerome Sayles, Deepak Mahulikar
  • Publication number: 20040159050
    Abstract: A novel CMP slurry composition used for polishing metals, the composition comprising: a dispersion solution comprising an abrasive. The slurry composition has a large particle count of about 25 to about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: December 1, 2003
    Publication date: August 19, 2004
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Patent number: 6776696
    Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.
    Type: Grant
    Filed: October 28, 2002
    Date of Patent: August 17, 2004
    Assignee: Planar Solutions LLC
    Inventors: Deepak Mahulikar, Richard J. Jenkins
  • Patent number: 6749488
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: June 15, 2004
    Assignee: Planar Solutions LLC
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Publication number: 20040082275
    Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.
    Type: Application
    Filed: October 28, 2002
    Publication date: April 29, 2004
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Deepak Mahulikar, Richard J. Jenkins
  • Publication number: 20030104770
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: April 30, 2001
    Publication date: June 5, 2003
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Publication number: 20030064671
    Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.
    Type: Application
    Filed: October 9, 2002
    Publication date: April 3, 2003
    Applicant: Arch Specialty Chemicals, Inc.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar, Larry A. LaFollette, Richard J. Jenkins
  • Patent number: 6468913
    Abstract: In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability having a shelf life of at least 30 days.
    Type: Grant
    Filed: July 8, 2000
    Date of Patent: October 22, 2002
    Assignee: Arch Specialty Chemicals, Inc.
    Inventors: Anthony Mark Pasqualoni, Deepak Mahulikar
  • Patent number: 6447563
    Abstract: This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: September 10, 2002
    Assignee: Arch Specialty Chemicals, Inc.
    Inventor: Deepak Mahulikar
  • Patent number: 6262477
    Abstract: There is provided a ball grid array package for housing semiconductor devices. The package has a metallic base with conductive vias extending through holes formed in the base. The conductive vias terminate adjacent an exterior surface of the base. A dielectric coating on at least part of the base and through hole walls electrically isolates the metallic base from the package circuitry.
    Type: Grant
    Filed: March 19, 1993
    Date of Patent: July 17, 2001
    Assignee: Advanced Interconnect Technologies
    Inventors: Deepak Mahulikar, Paul R. Hoffman, Jeffrey S. Braden
  • Patent number: 6158351
    Abstract: A lead free ferromagnetic article is disclosed. The article is a compacted composite having a heavy more dense constituent that is preferably ferrotungsten and a less dense second constituent that is either a metal alloy or a polymer. The ferromagnetic constituent is present in an amount sufficient to impart the article with ferromagnetism. The ferromagnetic property allows fragments of the article, such as a projectile, bullet or shaped charge liner to be separated from dirt or other environments.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: December 12, 2000
    Assignee: Olin Corporation
    Inventors: Brian Mravic, Henry J. Halverson, Deepak Mahulikar
  • Patent number: 6083840
    Abstract: The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: July 4, 2000
    Assignee: Arch Specialty Chemicals, Inc.
    Inventors: Brian Mravic, deceased, Anthony Mark Pasqualoni, Deepak Mahulikar
  • Patent number: 5969414
    Abstract: There is provided a leadframe assembly for encapsulation in a polymer resin which prevents post-assembly fracture or swelling of the resin. The leadframe is coated with an adhesion enhancing layer that increases the shear stress required for delamination to in excess of about 3.4 MPa. In combination with this adhesion enhancing layer is a compliant die attach adhesive bonding an integrated circuit device to a central die attach paddle. This compliant die attach adhesive has a compliancy factor, E.multidot.a of less than 1.5 MPa/.degree.C. and a thickness of from about 0.01 mm to about 0.08 mm.
    Type: Grant
    Filed: May 25, 1994
    Date of Patent: October 19, 1999
    Assignee: Advanced Technology Interconnect Incorporated
    Inventors: Arvind Parthasarathi, Deepak Mahulikar
  • Patent number: 5952719
    Abstract: The bending of a ball grid array electronic package having a metallic base is reduced minimizing stresses applied to the innermost row of solder balls when the package base is cyclically heated and cooled. Reducing the stresses applied to the solder balls increases the number of thermal cycles before solder ball fracture causes device failure. Among the means disclosed to reduce the bending moment are a bimetallic composite base, an integral stiffener, a centrally disposed cover bonded to an external structure and a package base with a stress accommodating depressed portion.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: September 14, 1999
    Assignee: Advanced Interconnect Technologies, Inc.
    Inventors: Peter W. Robinson, Deepak Mahulikar, Paul R. Hoffman
  • Patent number: 5939214
    Abstract: Composite materials for electronic packages are disclosed. The composite materials comprise a core layer and first and second cladding layers. The core and cladding layer compositions and thicknesses are selected to maximize thermal and electrical conductivity and to minimize the coefficient of thermal expansion of the composite. The composite material may be employed to fashion the package base, the leadframe, a heat spreader or combinations thereof. In one embodiment, a portion of the first cladding layer is removed so that an electronic device may be mounted directly to a high thermal conductivity core.
    Type: Grant
    Filed: November 24, 1992
    Date of Patent: August 17, 1999
    Assignee: Advanced Technology Interconnect, Incorporated
    Inventors: Deepak Mahulikar, Jacob Crane, Abid Ali Khan
  • Patent number: 5814759
    Abstract: A composite lead-free bullet is disclosed comprising a heavy constituents selected from the group of tungsten, tungsten carbide, carballoy, and ferro-tungsten and a second binder constituent consisting of either a metal alloy or a plastic blend.
    Type: Grant
    Filed: February 3, 1997
    Date of Patent: September 29, 1998
    Assignee: Olin Corporation
    Inventors: Brian Mravic, Deepak Mahulikar, Gerald Noel Violette, Eugene Shapiro, Henry J. Halverson
  • Patent number: 5741544
    Abstract: Various types of articles having various deposition coatings applied using a gas vapor deposition process are provided. A system evacuates gases from the article or a deposition chamber prior to depositing a coating. The coating may be applied throughout the inside of an article or may be selectively applied to a portion of the article. The article may be moved relative to the gas jet or the gas may be moved jet relative to the article. Stencils may be used to pattern the coating on the surface of the article. The articles are coated in a pressure of approximately 5 millitorr. Articles may be cylindrically shaped, leadframes on a reel, substrates, or printed circuit boards.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: April 21, 1998
    Assignee: Olin Corporation
    Inventor: Deepak Mahulikar
  • Patent number: 5688606
    Abstract: There is provided an anodizable aluminum substrate having an increased breakdown voltage. The increase in breakdown voltage is achieved by selecting an appropriate aluminum alloy and appropriate processing parameters. Sealing the anodic film increases the breakdown voltage by decreasing corrosion. A preferred sealant is an epoxy cresol novolac having a low room temperature viscosity that cures to a highly cross-linked polymer.
    Type: Grant
    Filed: April 18, 1996
    Date of Patent: November 18, 1997
    Assignee: Olin Corporation
    Inventors: Deepak Mahulikar, Efraim Sagiv, Arvind Parthasarathi, Satish Jalota, Andrew J. Brock, Michael A. Holmes, Jeffrey M. Schlater, German J. Ramirez, Dexin Liang
  • Patent number: 5650592
    Abstract: There is provided a component for use in electronic packaging. The component is a composite having a graphite matrix which is infiltrated with a metal or a metal alloy and the external surfaces of the composite then coated with a metallic layer to provide environmental and mechanical protection. The packaging components are lightweight, have a coefficient of thermal expansion close to that of a silicon based integrated circuit device and further, have a high coefficient of thermal conductivity.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: July 22, 1997
    Assignee: Olin Corporation
    Inventors: Harvey Cheskis, Deepak Mahulikar