Patents by Inventor Deepak Mahulikar

Deepak Mahulikar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4882212
    Abstract: The present invention is directed to components and the process of forming the components for housing semiconductor devices. The components are formed of a unique ceramic-glass-metal composite material comprising ceramic particles, metallic particles and a glass matrix with said ceramic and metallic particles dispersed throughout. Metal elements can be embedded into the material to enable simplified fabrication of devices such as semiconductor packaging.
    Type: Grant
    Filed: October 30, 1986
    Date of Patent: November 21, 1989
    Assignee: Olin Corporation
    Inventors: Narendra N. SinghDeo, Deepak Mahulikar, Sheldon H. Butt
  • Patent number: 4872047
    Abstract: A semiconductor die attach system adapted for attaching a semiconductor die to a substrate is provided. A metallic buffer component is disposed between the substrate and the semiconductor die to withstand stresses created from thermal cycling of the substrate and the die. The metallic buffer component is sealed to the substrate with a layer of solder. The layer of solder is provided to dissipate stresses created by thermal cycling of the substrate and the die. The die is sealed to the buffer with a silver-glass adhesive.
    Type: Grant
    Filed: November 7, 1986
    Date of Patent: October 3, 1989
    Assignee: Olin Corporation
    Inventors: Julius C. Fister, Satyam C. Cherukuri, Deepak Mahulikar, Brian E. O'Donnelly
  • Patent number: 4821151
    Abstract: A hermetically sealed package adapted to house a plurality of semiconductor devices. The package include a multi-layer circuit device formed of a plurality of ceramic substrates and conductive circuit patterns disposed therebetween. A ceramic cover having at least one cavity adapted for receiving a semiconductor die is sealed to the multi-layer circuit device. Electrical leads are connected to the semiconductor device and extend outward from the package for connection to the conductive circuit pattern within the multi-layer circuit.
    Type: Grant
    Filed: December 20, 1985
    Date of Patent: April 11, 1989
    Assignee: Olin Corporation
    Inventors: Michael J. Pryor, Narendra N. Singhdeo, Deepak Mahulikar
  • Patent number: 4799973
    Abstract: The present invention relates to a process for maintaining the fine grain size of and providing excellent bend formability, hot ductility and strength properties to a copper-nickel-manganese alloy to be exposed to elevated temperatures. The process of the present invention includes a final cold working step during which the material to be fabricated into a desired article and/or exposed to the elevated temperatures has its thickness reduced by about 4% to about 30%, preferably from about 5% to about 25%. The alloys described herein have particular utility in brazed articles or assemblies.
    Type: Grant
    Filed: April 2, 1984
    Date of Patent: January 24, 1989
    Assignee: Olin Corporation
    Inventors: Deepak Mahulikar, Eugene Shapiro
  • Patent number: 4793967
    Abstract: The present invention is directed to a cermet material comprising a matrix of aluminum alloy with ceramic particles distributed therein. The cermet is adapted for use as a semiconductor substrate and is manufactured using powder technology procedures. The cermet comprises from about 40 to about 60 volume % of aluminum or aluminum alloy, from an effective amount up to about 10 volume % of binder for enhancing bonding between the aluminum alloy and ceramic particles, and the balance essentially ceramic particles.
    Type: Grant
    Filed: December 31, 1987
    Date of Patent: December 27, 1988
    Assignee: Olin Corporation
    Inventors: Michael J. Pryor, Eugene Shapiro, Deepak Mahulikar
  • Patent number: 4748136
    Abstract: The present invention is directed to a composite and process of forming the composite comprising metallic particles for enhancing the flow characteristics of said composite, a glass for adhering the composite together and the balance essentially ceramic particles. The composite has a matrix comprising the glass with the ceramic and metallic particles dispersed therein. The metallic particles are preferably present in the composite at a volume percentage so as to be discontinuously dispersed throughout.
    Type: Grant
    Filed: October 30, 1986
    Date of Patent: May 31, 1988
    Assignee: Olin Corporation
    Inventors: Deepak Mahulikar, Narendra N. SinghDeo
  • Patent number: 4743299
    Abstract: The present invention is directed to a cermet material comprising a matrix of aluminum alloy with ceramic particles distributed therein. The cermet is adapted for use as a semiconductor substrate and is manufactured using powder technology procedures. The cermet comprises from about 40 to about 60 volume % of aluminum or aluminum alloy, from an effective amount up to about 10 volume % of binder for enhancing bonding between the aluminum alloy and ceramic particles, and the balance essentially ceramic particles.
    Type: Grant
    Filed: March 12, 1986
    Date of Patent: May 10, 1988
    Assignee: Olin Corporation
    Inventors: Michael J. Pryor, Eugene Shapiro, Deepak Mahulikar
  • Patent number: 4715892
    Abstract: The present invention is directed to a cermet material comprising a matrix of metal or alloy with ceramic particles distributed therein. The cermet includes a glass binder for bonding between the metal or alloy and the ceramic particles.
    Type: Grant
    Filed: October 30, 1986
    Date of Patent: December 29, 1987
    Assignee: Olin Corporation
    Inventor: Deepak Mahulikar
  • Patent number: 4704626
    Abstract: A graded seal assembly adapted for hermetically sealing a semiconductor package is disclosed. First and second members having first and second coefficients of thermal expansion respectively are provided. A leadframe is disposed between the first and second members. A first sealing glass is bonded to opposite surfaces of the leadframe and is disposed between the leadframe and the first member for sealing the leadframe to the first member. The second sealing glass is bonded to the second member. The second sealing glass has a third CTE which has a mismatch of less than about 5.times.10.sup.-7 in/in/.degree.C. with said second member. A graded interface zone having stratified layers fuses the first and second sealing glasses. Each of the layers in the zone has a coefficient of thermal expansion which is mismatched less than about 5.times.10.sup.-7 in/in/.degree.C. with an adjacent layer to absorb thermal stress formed by exposure of the semiconductor package to thermal cycling.
    Type: Grant
    Filed: July 8, 1985
    Date of Patent: November 3, 1987
    Assignee: Olin Corporation
    Inventors: Deepak Mahulikar, Satyam C. Cherukuri
  • Patent number: 4578320
    Abstract: The present invention relates to copper-nickel alloys having improved ductility at elevated temperatures. The alloys consist essentially of about 5% to about 45%, preferably about 5% to 35% nickel, about 0.4% to about 1.1%, preferably about 0.6% to about 1% manganese, about 0.003% to about 0.04%, preferably about 0.008% to about 0.03% phosphorous and the balance essentially copper. The alloys described herein have particular utility in brazed articles or assemblies.
    Type: Grant
    Filed: March 9, 1984
    Date of Patent: March 25, 1986
    Assignee: Olin Corporation
    Inventors: Deepak Mahulikar, Eugene Shapiro