Patents by Inventor Deodatta Vinayak Shenai-Khatkhate

Deodatta Vinayak Shenai-Khatkhate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7919638
    Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: April 5, 2011
    Assignee: Rohm and Haas Company
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20110064879
    Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.
    Type: Application
    Filed: September 14, 2010
    Publication date: March 17, 2011
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Qing Min Wang, Deodatta Vinayak Shenai-Khatkhate, Huazhi Ll
  • Publication number: 20110003463
    Abstract: Methods of doping a III-V compound semiconductor film are disclosed.
    Type: Application
    Filed: June 21, 2010
    Publication date: January 6, 2011
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak SHENAI-KHATKHATE
  • Publication number: 20100300361
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Application
    Filed: May 25, 2010
    Publication date: December 2, 2010
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak SHENAI-KHATKHATE, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, JR.
  • Patent number: 7767840
    Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: August 3, 2010
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Publication number: 20100185003
    Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Application
    Filed: February 5, 2010
    Publication date: July 22, 2010
    Applicant: ROHM AND HAAS COMPANY
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20100185002
    Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Application
    Filed: February 5, 2010
    Publication date: July 22, 2010
    Applicant: ROHM AND HAAS COMPANY
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Patent number: 7722720
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: May 25, 2010
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, Jr.
  • Patent number: 7659414
    Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device for synthesis in reacting a metal halide with an alkylating agent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: February 9, 2010
    Assignee: Rohm and Haas Company
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20090156852
    Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Application
    Filed: August 12, 2008
    Publication date: June 18, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Patent number: 7547631
    Abstract: Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: June 16, 2009
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Patent number: 7531458
    Abstract: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: May 12, 2009
    Assignee: Rohm and Haas Electronics Materials LLP
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Publication number: 20090023940
    Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device for synthesis in reacting a metal halide with an alkylating agent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Application
    Filed: June 30, 2008
    Publication date: January 22, 2009
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20090020010
    Abstract: This invention relates to methods of removing impurities from compounds having similar volatilities to form ultra high purity compounds.
    Type: Application
    Filed: June 30, 2008
    Publication date: January 22, 2009
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20090017208
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Application
    Filed: March 3, 2008
    Publication date: January 15, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qing Min Wang
  • Publication number: 20080305260
    Abstract: Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 11, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Patent number: 7413776
    Abstract: A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: August 19, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Patent number: 7390360
    Abstract: Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: June 24, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Egbert Woelk
  • Publication number: 20080026577
    Abstract: Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: October 4, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Publication number: 20080026576
    Abstract: Certain organometallic compounds in the form of imino complexes are provided. Such complexes are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang