Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Abstract: The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

Abstract: The invention concerns a field-effect controlled semiconductor component with at least four regions of alternating opposite performance types: an anode-side emitter region, a first and a second base region connected to the emitter region, and a cathode-side emitter region; the cathode-side emitter region and the first base region from the source and drain of an MOS field effect transistor. The component also comprises an anode contact, a contact at the cathode-side emitter region and a control electrode contact of the MOS field effect transistor. The invention lies in the fact that a p+ region (36) which is adjacent to the cathode-side base region, separate, and accomodated in the anode-side n- base region (20), is connected via a separate component as a coupling element (80) with non-linear current/voltage characteristics to the cathode contact, the said region (36) being directly surrounded by the anode-side base region (20).

Abstract: A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a MOSFET switch and a diode which connects a highly doped region embedded in a first part of a second base region of the thyristor to the cathode of the device.

Abstract: A gate turn-off thyristor comprising, a first emitter layer of one conductivity type, a main base layer of another conductivity type connected to said first emitter layer and a control base layer of the first conductivity type connected to the main base layer. A second emitter of the other conductivity type is connected to the control base layer at a junction which surrounds a portion of the second emitter layer. An emitter contact is connected to the second emitter layer and a control base contact is connected to the control base layer. The gate turn-off thyristor is turned off by a short circuiting of the control base contact with the emitter contact. The surface resistance of the control base layer between the second emitter layer and the control base contact is selected so that, with a control base turn-off current applied which is sufficient for turning off the thyristor, a potential appears on a lateral resistance in the control base layer which is less than a potential appearing at the junction.

Abstract: The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor disk, with the two load current connections located on the top surface and on the bottom surface of the semiconductor disk respectively. According to the invention, the semiconductor disk comprises an additional controllable circuit element with a lateral zone structure on the top surface of the semiconductor disk. Zones of this additional circuit element are linked with zones of the vertical thyristor in such a way as to enable the vertical thyristor to be indirectly ignited by ignition of the lateral circuit element.

Abstract: An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emit

Abstract: A semiconductor switch including a main thyristor and an auxiliary thyristor which can both be switched on and off by a control current. The anodes of the two thyristors are connected together and lead to a first load current terminal for the switch, the cathode of the main thyristor leads to a second load current terminal for the switch, the control electrode of the main thyristor is connected with the cathode of the auxiliary thyristor, and the control current for the switch is fed in via the control electrode of the auxiliary thyristor. The turn-off gain of the main thyristor is greater than the turn-off gain of the auxiliary thyristor and the holding current of the auxiliary thyristor is lower than the holding current of the main thyristor.

Abstract: A controllable semiconductor rectifier which is subject to an interference potential and controllable by a control power comprises a first emitter layer, a first main electrode connected to the first emitter layer, a control base layer connected to the first emitter layer, a main base layer connected to the control base layer and a second emitter layer connected to the main base layer. A connection is established between a portion of the control base layer and the first emitter layer for applying a compensating potential to the first emitter layer for compensating the interference potential and a limiting non-linear component is connected between a portion of the control base layer and the first emitter layer for limiting the interference potential.

Abstract: A gate turn-off thyristor device including a gate turn-off main thyristor and a gate turn-off auxiliary thyristor, each having an emitter, a control base, a main base and a counter-emitter, integrated in a semiconductor body including three zones of alternatingly opposite conductivity type. The three zones of the semiconductor body are each divided into two regions to provide the counter-emitter, main base and control base zones of the two thyristors, while the emitter zones of the main thyristor and of the auxiliary thyristor are separate zones formed in the respective associated regions constituting the control base zones of the respective thyristors.

Abstract: A light fired thyristor including a semiconductor body having four zones of alternatingly opposite conductivity types constituting a first or cathode emitter zone, a control base zone adjacent thereto, a main base zone and a second or anode emitter zone with the cathode emitter zone being formed within the control base zone at one major surface of the semiconductor body and being divided into a plurality of separate regions of which one serves as the firing region of the first emitter zone to fire the thyristor in response to impinging radiation energy. The firing region of the first emitter zone is provided in part with a first ohmic contact which is ohmically connected to a further ohmic contact connected to the control base region adjacent the edge of the semiconductor body. The remaining regions of the first emitter zone are provided with a cathode contact which simultaneously contacts the portions of the control base zone between these regions and forms short circuits with the control base zone.