Patents by Inventor Dmitri Zalmanovich Garbuzov

Dmitri Zalmanovich Garbuzov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7084444
    Abstract: A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: August 1, 2006
    Assignee: Trumpf Photonics, Inc.
    Inventors: Dmitri Zalmanovich Garbuzov, Raymond J. Menna
  • Publication number: 20040131098
    Abstract: A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.
    Type: Application
    Filed: March 11, 2004
    Publication date: July 8, 2004
    Inventors: Dmitri Zalmanovich Garbuzov, Raymond J Menna
  • Patent number: 6650671
    Abstract: A semiconductor diode laser has a characteristic output with a single mode vertical far-field divergence. The semiconductor diode laser includes a waveguide with a first refractive index and a quantum well embedded in the center of the waveguide. On one side of the waveguide sits a p-type cladding layer with a second refractive index smaller than the first refractive index. On the other side of the waveguide sits an n-type cladding layer with a third refractive index smaller than the first refractive index and larger than the second refractive index.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: November 18, 2003
    Assignee: Trumpf Photonics, Inc.
    Inventors: Dmitri Zalmanovich Garbuzov, Viktor Borisovich Khalfin, John Charles Connolly
  • Patent number: 6556611
    Abstract: A diode laser comprises a laser cavity defining a linear optical-path axis, and a current-pumped stripe region, said current-pumped stripe region being disposed within said laser cavity. The laser cavity includes an output surface perpendicular to the optical axis; and a reflection surface including a distributed Bragg reflector (DBR) grating and being disposed at a non-perpendicular angle to the optical-path axis.
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: April 29, 2003
    Assignee: Princeton Lightwave, Inc.
    Inventors: Viktor Borisovich Khalfin, Dmitri Zalmanovich Garbuzov, Louis Anthony DiMarco, John Charles Connolly
  • Patent number: 6459715
    Abstract: An apparatus includes a single-mode master-oscillator section and a power amplifier section. The single-mode master-oscillator section includes a waveguide defined by a first end and a second end, the first end including a first distributed Bragg reflector mirror, and the second end including a second distributed Bragg reflector mirror. The single-mode-master-oscillator section also has a first longitudinal axis. The power amplifier section is a broad-contact amplifier coupled to the single-mode-master-oscillator section by a coupling grating that is contained in the waveguide of the single-mode-master-oscillator section. The broad contact amplifier section includes a reflection side, an output side and a second longitudinal axis, the second longitudinal axis being at an angle approximately (90°−&bgr;) to said first longitudinal axis, &bgr; being in a range between 0° and approximately 20°.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: October 1, 2002
    Assignee: Princeton Lightwave, Inc.
    Inventors: Viktor Borisovich Khalfin, Dmitri Zalmanovich Garbuzov, Louis Anthony DiMarco, John Charles Connolly
  • Patent number: 6404125
    Abstract: An apparatus comprises an active region, a phosphor layer and a substrate. The active region is configured to emit light having a first band of wavelengths selected from a first group of wavelengths. The phosphor layer has a first refractive index. The phosphor layer includes a plurality of wavelength-converting phosphors. The phosphor layer is configured to convert the first band of wavelengths of light emitted from the active region to a second band of wavelengths. A center wavelength of the second band of wavelengths is greater than a center wavelength of the first band of wavelengths. The substrate is disposed between and in contact with the active region and the phosphor layer. The substrate has a second refractive index. The first refractive index substantially equals the second refractive index.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: June 11, 2002
    Assignees: Sarnoff Corporation, Emcore Corporation
    Inventors: Dmitri Zalmanovich Garbuzov, John Charles Connolly, Robert Frank Karlicek, Jr., Ian Thomas Ferguson
  • Patent number: 6366018
    Abstract: An apparatus, comprises an active region, a phosphor layer and a reflective layer. The active region is configured to emit light having a first band of wavelengths from a first group of wavelengths. The phosphor layer is disposed between and in contact with the active region and an exterior medium. The phosphor layer is configured to convert the first band of wavelengths of light emitted from the active region to a second band of wavelengths. A center wavelength of the second band of wavelengths is greater than a center wavelength of the first band of wavelengths. The reflective layer is optically coupled to the active region. The active region is disposed between the reflective layer and the phosphor layer. The reflective layer is configured to reflect at least the first band of wavelengths and the second band of wavelengths.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: April 2, 2002
    Assignees: Sarnoff Corporation, Emcore Corporation
    Inventors: Dmitri Zalmanovich Garbuzov, John Charles Connolly, Robert Frank Karlicek, Jr., Ian Thomas Ferguson
  • Patent number: 6330263
    Abstract: A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds with compositions outside of the miscibility gap of corresponding quaternary compounds for quantum wells in GaSb— or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 &mgr;m range. The semiconductor diode laser may be formed so as to operate having a multi-mode or single-mode radiation.
    Type: Grant
    Filed: June 29, 1998
    Date of Patent: December 11, 2001
    Assignee: Sarnoff Corporation
    Inventors: Dmitri Zalmanovich Garbuzov, John Charles Connolly, Viktor Borisovich Khalfin, Hao Lee
  • Patent number: 6301279
    Abstract: A semiconductor diode laser with thermal sensor control comprises a heat sink, a diode-laser structure, and a thermal sensor thermally coupled to said diode-laser structure in a place where the temperature gradient across the semiconductor diode laser is close to zero.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: October 9, 2001
    Assignee: Princeton Lightwave Inc.
    Inventors: Dmitri Zalmanovich Garbuzov, Mikhail Alexandrovich Maiorov, Viktor Borisovich Khalfin, John Charles Connolly
  • Patent number: 6133520
    Abstract: A thermophotovoltaic cell and diode photodetector having improved open circuit voltage and high internal efficiency includes a semiconductor body having regions of n-type conductivity and p-type conductivity adjacent each other to form a p-n junction therebetween. The p-type region is of a material having a band gap which will absorb black-body radiation and the n-type region is of a material having a wider band gap than that of the p-type region. This forms a heterojunction between the two regions. The region of n-type region has a doping level which is an order of magnitude less than the doping level in the p-type region. This structure forms a cell having a space charge region in the n-type region.
    Type: Grant
    Filed: November 12, 1998
    Date of Patent: October 17, 2000
    Assignee: Sarnoff Corporation
    Inventors: Dmitri Zalmanovich Garbuzov, Victor Borisovich Khalfin, Ramon Ubaldo Martinelli, Hao Lee, Nancy Ann Morris, John Charles Connolly
  • Patent number: RE41643
    Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5×1016/cm3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: September 7, 2010
    Assignee: Trumpf Photonics, Inc.
    Inventors: Dmitri Zalmanovich Garbuzov, Joseph Hy Abeles, John Charles Connolly