Patents by Inventor Donald Dibra
Donald Dibra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10553675Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.Type: GrantFiled: October 17, 2017Date of Patent: February 4, 2020Assignee: Infineon Technologies AGInventors: Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Andreas Meiser, Hans-Joachim Schulze, Martina Seider-Schmidt, Robert Wiesner
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Publication number: 20180108675Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.Type: ApplicationFiled: October 17, 2017Publication date: April 19, 2018Inventors: Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Andreas Meiser, Hans-Joachim Schulze, Martina Seider-Schmidt, Robert Wiesner
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Patent number: 9899367Abstract: An embodiment of an integrated circuit includes a minimum lateral dimension of a semiconductor well at a first surface of a semiconductor body. The integrated circuit further includes a first lateral DMOSFET having a load path electrically coupled to a load pin. The first lateral DMOSFET is configured to control a load current through a load element electrically coupled to the load pin. A minimum lateral dimension of a drain region of the first lateral DMOSFET at the first surface of the semiconductor body is more than 50% greater than the minimum lateral dimension.Type: GrantFiled: May 12, 2016Date of Patent: February 20, 2018Assignee: Infineon Technologies AGInventors: Kai Esmark, Yiqun Cao, Donald Dibra
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Patent number: 9865792Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: GrantFiled: May 20, 2014Date of Patent: January 9, 2018Assignee: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow, Markus Zundel
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Publication number: 20160336308Abstract: An embodiment of an integrated circuit includes a minimum lateral dimension of a semiconductor well at a first surface of a semiconductor body. The integrated circuit further includes a first lateral DMOSFET having a load path electrically coupled to a load pin. The first lateral DMOSFET is configured to control a load current through a load element electrically coupled to the load pin. A minimum lateral dimension of a drain region of the first lateral DMOSFET at the first surface of the semiconductor body is more than 50% greater than the minimum lateral dimension.Type: ApplicationFiled: May 12, 2016Publication date: November 17, 2016Inventors: Kai Esmark, Yiqun Cao, Donald Dibra
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Patent number: 9444027Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.Type: GrantFiled: October 4, 2011Date of Patent: September 13, 2016Assignee: Infineon Technologies AGInventor: Donald Dibra
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Publication number: 20160172849Abstract: Representative implementations of devices and techniques provide detection of an electrical stress event for an electrical component or system. A detection component may be located near the electrical component or system and be arranged to determine the existence of the electrical stress event. In some implementations, the detection component is arranged to record, count, and/or differentiate the type of the electrical stress event.Type: ApplicationFiled: December 11, 2014Publication date: June 16, 2016Inventors: Donald DIBRA, Kai ESMARK
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Patent number: 9105470Abstract: A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.Type: GrantFiled: April 10, 2014Date of Patent: August 11, 2015Assignee: Infineon Technologies Austria AGInventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
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Patent number: 8907418Abstract: A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line.Type: GrantFiled: May 7, 2013Date of Patent: December 9, 2014Assignee: Infineon Technologies Austria AGInventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
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Publication number: 20140332877Abstract: A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.Type: ApplicationFiled: April 10, 2014Publication date: November 13, 2014Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
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Publication number: 20140332881Abstract: A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line.Type: ApplicationFiled: May 7, 2013Publication date: November 13, 2014Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
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Publication number: 20140251408Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: ApplicationFiled: May 20, 2014Publication date: September 11, 2014Applicant: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow, Markus Zundel
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Patent number: 8766394Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: GrantFiled: March 21, 2012Date of Patent: July 1, 2014Assignee: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow, Markus Zundel
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Publication number: 20130081662Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.Type: ApplicationFiled: October 4, 2011Publication date: April 4, 2013Applicant: Infineon Technologies AGInventor: Donald Dibra
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Publication number: 20120175687Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: ApplicationFiled: March 21, 2012Publication date: July 12, 2012Applicant: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow, Markus Zundel
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Patent number: 8169045Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: GrantFiled: April 28, 2009Date of Patent: May 1, 2012Assignee: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow, Markus Zundel
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Patent number: 8084821Abstract: An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact.Type: GrantFiled: January 30, 2008Date of Patent: December 27, 2011Assignee: Infineon Technologies AGInventors: Donald Dibra, Christoph Kadow
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Publication number: 20110051302Abstract: A method of protecting a circuit arrangement including an integrated power dissipating device, and a circuit arrangement including an integrated power dissipating device. One method provides measuring a temperature difference between temperatures at a first position and a second position of the arrangement, the second position being distant to the first position; generating a thermal protection signal, and generating the control signal dependent on the thermal protection signal; and the thermal protection signal assuming a first signal level, if the temperature difference rises to a first temperature difference threshold, and assuming a second signal level, if the temperature difference falls to a second temperature difference threshold.Type: ApplicationFiled: August 27, 2009Publication date: March 3, 2011Applicant: Infineon Technologies AGInventor: Donald Dibra
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Publication number: 20100301332Abstract: Disclosed is a method for detecting a mechanical fault state of a semiconductor arrangement, using a temperature profile.Type: ApplicationFiled: May 29, 2009Publication date: December 2, 2010Inventors: Donald Dibra, Jens Barrenscheen
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Publication number: 20100270620Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.Type: ApplicationFiled: April 28, 2009Publication date: October 28, 2010Inventors: Donald Dibra, Christoph Kadow, Markus Zundel