Patents by Inventor Donald Dibra

Donald Dibra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553675
    Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: February 4, 2020
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Andreas Meiser, Hans-Joachim Schulze, Martina Seider-Schmidt, Robert Wiesner
  • Publication number: 20180108675
    Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.
    Type: Application
    Filed: October 17, 2017
    Publication date: April 19, 2018
    Inventors: Sebastian Schmidt, Donald Dibra, Oliver Hellmund, Peter Irsigler, Andreas Meiser, Hans-Joachim Schulze, Martina Seider-Schmidt, Robert Wiesner
  • Patent number: 9899367
    Abstract: An embodiment of an integrated circuit includes a minimum lateral dimension of a semiconductor well at a first surface of a semiconductor body. The integrated circuit further includes a first lateral DMOSFET having a load path electrically coupled to a load pin. The first lateral DMOSFET is configured to control a load current through a load element electrically coupled to the load pin. A minimum lateral dimension of a drain region of the first lateral DMOSFET at the first surface of the semiconductor body is more than 50% greater than the minimum lateral dimension.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: February 20, 2018
    Assignee: Infineon Technologies AG
    Inventors: Kai Esmark, Yiqun Cao, Donald Dibra
  • Patent number: 9865792
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: January 9, 2018
    Assignee: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Publication number: 20160336308
    Abstract: An embodiment of an integrated circuit includes a minimum lateral dimension of a semiconductor well at a first surface of a semiconductor body. The integrated circuit further includes a first lateral DMOSFET having a load path electrically coupled to a load pin. The first lateral DMOSFET is configured to control a load current through a load element electrically coupled to the load pin. A minimum lateral dimension of a drain region of the first lateral DMOSFET at the first surface of the semiconductor body is more than 50% greater than the minimum lateral dimension.
    Type: Application
    Filed: May 12, 2016
    Publication date: November 17, 2016
    Inventors: Kai Esmark, Yiqun Cao, Donald Dibra
  • Patent number: 9444027
    Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: September 13, 2016
    Assignee: Infineon Technologies AG
    Inventor: Donald Dibra
  • Publication number: 20160172849
    Abstract: Representative implementations of devices and techniques provide detection of an electrical stress event for an electrical component or system. A detection component may be located near the electrical component or system and be arranged to determine the existence of the electrical stress event. In some implementations, the detection component is arranged to record, count, and/or differentiate the type of the electrical stress event.
    Type: Application
    Filed: December 11, 2014
    Publication date: June 16, 2016
    Inventors: Donald DIBRA, Kai ESMARK
  • Patent number: 9105470
    Abstract: A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: August 11, 2015
    Assignee: Infineon Technologies Austria AG
    Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
  • Patent number: 8907418
    Abstract: A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: December 9, 2014
    Assignee: Infineon Technologies Austria AG
    Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
  • Publication number: 20140332877
    Abstract: A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
    Type: Application
    Filed: April 10, 2014
    Publication date: November 13, 2014
    Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
  • Publication number: 20140332881
    Abstract: A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line.
    Type: Application
    Filed: May 7, 2013
    Publication date: November 13, 2014
    Inventors: Gerhard Noebauer, Christoph Kadow, Donald Dibra, Robert Illing
  • Publication number: 20140251408
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Application
    Filed: May 20, 2014
    Publication date: September 11, 2014
    Applicant: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Patent number: 8766394
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: July 1, 2014
    Assignee: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Publication number: 20130081662
    Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.
    Type: Application
    Filed: October 4, 2011
    Publication date: April 4, 2013
    Applicant: Infineon Technologies AG
    Inventor: Donald Dibra
  • Publication number: 20120175687
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Application
    Filed: March 21, 2012
    Publication date: July 12, 2012
    Applicant: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Patent number: 8169045
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: May 1, 2012
    Assignee: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel
  • Patent number: 8084821
    Abstract: An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: December 27, 2011
    Assignee: Infineon Technologies AG
    Inventors: Donald Dibra, Christoph Kadow
  • Publication number: 20110051302
    Abstract: A method of protecting a circuit arrangement including an integrated power dissipating device, and a circuit arrangement including an integrated power dissipating device. One method provides measuring a temperature difference between temperatures at a first position and a second position of the arrangement, the second position being distant to the first position; generating a thermal protection signal, and generating the control signal dependent on the thermal protection signal; and the thermal protection signal assuming a first signal level, if the temperature difference rises to a first temperature difference threshold, and assuming a second signal level, if the temperature difference falls to a second temperature difference threshold.
    Type: Application
    Filed: August 27, 2009
    Publication date: March 3, 2011
    Applicant: Infineon Technologies AG
    Inventor: Donald Dibra
  • Publication number: 20100301332
    Abstract: Disclosed is a method for detecting a mechanical fault state of a semiconductor arrangement, using a temperature profile.
    Type: Application
    Filed: May 29, 2009
    Publication date: December 2, 2010
    Inventors: Donald Dibra, Jens Barrenscheen
  • Publication number: 20100270620
    Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
    Type: Application
    Filed: April 28, 2009
    Publication date: October 28, 2010
    Inventors: Donald Dibra, Christoph Kadow, Markus Zundel