Patents by Inventor Donald S. Gardner

Donald S. Gardner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10483249
    Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.
    Type: Grant
    Filed: December 26, 2015
    Date of Patent: November 19, 2019
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Edward A. Burton, Gerhard Schrom, Larry E. Mosley
  • Patent number: 10354786
    Abstract: Embodiments are generally directed to hybrid magnetic material structures for electronic devices and circuits. An embodiment of an inductor includes a first layer of magnetic film material applied on a substrate, one or more conductors placed on the first layer of magnetic film material, and a second layer of magnetic particles, wherein the magnetic particles are suspended in an insulating medium.
    Type: Grant
    Filed: October 1, 2016
    Date of Patent: July 16, 2019
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Gerhard Schrom, Edward A. Burton
  • Publication number: 20190198866
    Abstract: Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous disks comprising a porous material, the porous disks having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material encapsulating the porous disks; where the structural material provides structural stability to the electrode during use.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 27, 2019
    Applicant: Intel Corporation
    Inventors: Donald S. Gardner, Charles W. Holzwarth, Bum Ki Moon, Yang Liu, Priyanka Pande, Shanthi Murali, Nicolas Cirigliano, Zhaohui Chen
  • Publication number: 20190157152
    Abstract: Integrated passive components in a stacked integrated circuit package are described. In one embodiment an apparatus has a substrate, a first die coupled to the substrate over the substrate, the first die including a power supply circuit coupled to the substrate to receive power, a second die having a processing core and coupled to the first die over the first die, the first die being coupled to the power supply circuit to power the processing core, a via through the first die, and a passive device formed in the via of the first die and coupled to the power supply circuit.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: Sujit SHARAN, Ravindranath MAHAJAN, Stefan RUSU, Donald S. GARDNER
  • Publication number: 20190103229
    Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
    Type: Application
    Filed: March 26, 2018
    Publication date: April 4, 2019
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Scott B. Clendenning, Eric C. Hannah, Tomm V. Aldridge, John L. Gustafson
  • Patent number: 10236209
    Abstract: Integrated passive component in a stacked integrated circuit package are described. In one embodiment an apparatus has a substrate, a first die coupled to the substrate over the substrate, the first die molding a power supply circuit coupled to the substrate to receive power, a second die having a processing core and coupled to the first die over the first die, the first die being coupled to the power supply circuit to power the processing core, a via through the first die, and a passive device formed in the via of the first die and coupled to the power supply circuit.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: March 19, 2019
    Assignee: Intel Corporation
    Inventors: Sujit Sharan, Ravindranath Mahajan, Stefan Rusu, Donald S. Gardner
  • Patent number: 10217572
    Abstract: In one embodiment of the invention, a low frequency converter is described that includes a first electrochemical capacitor to charge to an input voltage and a second electrochemical capacitor that is coupled to the first electrochemical capacitor. The second electrochemical capacitor is associated with an output voltage of the low frequency converter. Each electrochemical capacitor may have a capacitance of at least one millifarad (mF) and a switching frequency that is less than one kilohertz.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: February 26, 2019
    Assignee: INTEL CORPORATION
    Inventors: Donald S. Gardner, Pavan Kumar
  • Patent number: 10217996
    Abstract: Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous disks comprising a porous material, the porous disks having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material encapsulating the porous disks; where the structural material provides structural stability to the electrode during use.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: February 26, 2019
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Charles W. Holzwarth, Bum Ki Moon, Yang Liu, Priyanka Pande, Shanthi Murali, Nicolas Cirigliano, Zhaohui Chen
  • Publication number: 20190006334
    Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.
    Type: Application
    Filed: December 26, 2015
    Publication date: January 3, 2019
    Inventors: Donald S. GARDNER, Edward A. BURTON, Gerhard SCHROM, Larry E. MOSLEY
  • Patent number: 10170244
    Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: January 1, 2019
    Assignee: INTEL CORPORATION
    Inventors: Donald S. Gardner, Cary L. Pint, Charles W. Holzwarth, Wei Jin, Zhaohui Chen, Yang Liu, Eric C. Hannah, John L. Gustafson
  • Publication number: 20180337402
    Abstract: Amorphous silicon anode electrodes and devices for a rechargeable batteries having enhanced structural stabilities are provided. An amorphous silicon anode can include an electrically conductive substrate and an electrode layer deposited onto the substrate, where the electrode layer is comprised of one or more amorphous silicon structures, and the amorphous silicon structures have at least one dimension that is less than or equal to about 500 nm.
    Type: Application
    Filed: November 27, 2017
    Publication date: November 22, 2018
    Applicant: Intel Corporation
    Inventors: Zhaohui Chen, Donald S. Gardner, Bum Ki Moon, Yang Liu
  • Patent number: 9997290
    Abstract: Embodiments of a variable inductor and a communication device are generally described herein. The variable inductor may comprise a signal wire and a control wire to receive a direct current (DC) control current. The variable inductor may further comprise a magnetic material integrated with the signal wire and the control wire. When a DC control current applied to the control wires takes a first current value, an inductance between an input node and an output node on the signal wire may take a first inductance value. When the DC control current takes a second current value, the inductance between the input node and the output node may take a second inductance value.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 12, 2018
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Hossein Alavi
  • Patent number: 9978533
    Abstract: An energy storage device includes a middle section (610) including a plurality of double-sided porous structures (500), each of which contain multiple channels (511) in two opposing surfaces (515, 525) thereof, an upper section (620) comprising a single-sided porous structure (621) containing multiple channels (622) in a surface (625) thereof, and a lower section (630) including a single-sided porous structure (631) containing multiple channels (632) in a surface (635) thereof.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: May 22, 2018
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Tomm V. Aldridge, Charles W. Holzwarth, Cary L. Pint, Zhaohui Chen, Wei C. Jin, Yang Liu, John L. Gustafson
  • Patent number: 9959983
    Abstract: Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous silicon having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material deposited within the channels; wherein the structural material provides structural stability to the electrode during use.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: May 1, 2018
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Charles W. Holzwarth
  • Patent number: 9947485
    Abstract: An energy storage device includes an electrode made from an active material in which a plurality of channels have been etched. The channels are coated with an electrically functional substance selected from a conductor and an electrolyte.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: April 17, 2018
    Assignee: INTEL CORPORATION
    Inventors: Yang Liu, Priyanka Pande, Bum Ki Moon, Michael C. Graf, Donald S. Gardner, Nicolas Cirigliano, Shanthi Murali, Zhaohui Chen
  • Publication number: 20180096764
    Abstract: Embodiments are generally directed to hybrid magnetic material structures for electronic devices and circuits. An embodiment of an inductor includes a first layer of magnetic film material applied on a substrate, one or more conductors placed on the first layer of magnetic film material, and a second layer of magnetic particles, wherein the magnetic particles are suspended in an insulating medium.
    Type: Application
    Filed: October 1, 2016
    Publication date: April 5, 2018
    Inventors: Donald S. GARDNER, Gerhard SCHROM, Edward A. BURTON
  • Publication number: 20180096776
    Abstract: Embodiments are generally directed to an integrated inductor with adjustable coupling. In some embodiments, an integrated inductor includes a first conductor and a second conductor; a first strip of magnetic material film below the first conductor and the second conductor; and a second strip of magnetic material film above the first conductor and the second conductor, wherein at least one of the first strip of magnetic material and the second strip of magnetic material includes a partial slot to partially separate a first section of the strip of magnetic material and a second section of the strip of magnetic material.
    Type: Application
    Filed: October 1, 2016
    Publication date: April 5, 2018
    Inventor: Donald S. GARDNER
  • Patent number: 9928966
    Abstract: In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: March 27, 2018
    Assignee: INTEL CORPORATION
    Inventors: Zhaohui Chen, Donald S. Gardner, Bum Ki Moon, Charles W. Holzwarth, Cary L. Pint, Scott B. Clendenning
  • Patent number: 9793061
    Abstract: An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.
    Type: Grant
    Filed: August 17, 2016
    Date of Patent: October 17, 2017
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Cary L. Pint, Scott B. Clendenning
  • Publication number: 20170236654
    Abstract: Hybrid electrochemical capacitors, electronic devices using such capacitors, and associated methods are disclosed. In an example, a hybrid electrochemical capacitor can include a first electrode made from Mg, Na, Zn, Al, Sn, or Li, a second electrode made from a porous material such as porous carbon or passivated porous silicon, and an electrolyte. The hybrid electrochemical capacitors can have enhanced voltage and energy density compared to other electrochemical capacitors, and enhanced power density compared to batteries.
    Type: Application
    Filed: April 27, 2017
    Publication date: August 17, 2017
    Applicant: Intel Corporation
    Inventors: DONALD S. GARDNER, CHUNLEI WANG, YANG LIU, ZHAOHUI CHEN, CHARLES W. HOLZWARTH, BUM KI MOON