Abstract: A wafer including a glass substrate is provided. The glass substrate includes a first surface defining a plane and including a surface roughness Ra of approximately 0.3 nm in an outer via region and a second surface. The glass substrate defines a plurality of vias extending from the first surface. The plurality of vias each include an entrance defined by the first surface.

Abstract: A radiography imaging system for generating images of a pipe assembly includes a radiation source for emitting rays. The pipe assembly includes at least one of a pipe, tubing, and a weld. The radiation source includes a radioactive isotope having an activity level within a range between about 1 Curie and about 40 Curies. The radiation source is positioned adjacent a portion of the pipe assembly. A detector is positioned opposite the radiation source. The portion of the pipe assembly is positioned between the radiation source and the detector such that the rays interact with the portion of the pipe assembly and strike the detector. The detector includes an imaging plate that is activated by illumination with the rays with an exposure within a range between about 0.5 Curie-minute and about 5 Curie-minutes of radiation. The imaging plate has a thickness within a range between about 5 mm and about 15 mm.

Abstract: A radiography imaging system for generating images of a pipe assembly includes a radiation source for emitting rays. The pipe assembly includes at least one of a pipe, tubing, and a weld. The radiation source includes a radioactive isotope having an activity level within a range between about 1 Curie and about 40 Curies. The radiation source is positioned adjacent a portion of the pipe assembly. A detector is positioned opposite the radiation source. The portion of the pipe assembly is positioned between the radiation source and the detector such that the rays interact with the portion of the pipe assembly and strike the detector. The detector includes an imaging plate that is activated by illumination with the rays with an exposure within a range between about 0.5 Curie-minute and about 5 Curie-minutes of radiation. The imaging plate has a thickness within a range between about 5 mm and about 15 mm.

Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: An organic electroluminescent device includes a transparent substrate having a conductive coating, a plurality of electroactive layers, a cathode layer, and a protective wax layer. The wax layer may be disposed directly on an electrode, particularly a cathode. The wax layer alone protects the cathode and no getter material is required to exclude oxygen and/or moisture. An OLED lighting device capable of emitting light from front and back surfaces, wherein an adhesive layer, particularly a wax layer, is disposed between cathodes of two organic electroluminescent devices positioned back to back.

Abstract: An article of manufacture comprises a thin film solid state lighting device, such as an organic light emitting diode (OLED) device, having a planar light emitting side and an opposite planar mounting side and including electrodes disposed on the planar mounting side of the thin film solid state lighting device, the electrodes including a magnetic material configured to conductively convey electrical drive current to drive the thin film solid state lighting device to emit light at the planar light emitting principal side. The article of manufacture may further comprise a fixture having a planar surface with magnets arranged to mate with the electrodes to magnetically secure the thin film solid state lighting device with the fixture and to concurrently form electrically conductive paths including the magnetic material of the electrodes configured to conductively convey electrical drive current. Thus this magnetic connection provides both mechanical support and electrical conduction path.

Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: An encapsulation structure comprises a first barrier layer, and an electroluminescence device configured to be coupled to the first barrier layer and comprising a substrate and an electroluminescence element both defining a lateral side. The electroluminescence element comprises a first electrode disposed on the substrate, a second electrode, and an organic light-emitting layer disposed between the first and second electrodes. Further, the encapsulation structure comprises a second barrier layer configured to be coupled to the electroluminescence device, and an adhesive configured to locate between and connect the first and second barrier layers, and at least to be coupled to the lateral side of the electroluminescence device to seal the electroluminescence device between the first and second barrier layers. An encapsulation method is also presented.

Abstract: An optoelectonice device array includes a plurality of packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package overlaps at least one adjacent package, and may be hermetically sealed.

Abstract: A photovoltaic roofing system and a method of installing the photovoltaic ridge cap structure have been provided. The photovoltaic roofing system includes a ridge cap adapted to cover a ridge of a roof structure. The system also includes at least one photovoltaic cell disposed within the ridge cap. The method of installing a photovoltaic ridge cap structure includes mounting the ridge cap over multiple photovoltaic cells along a ridge of a roof structure. The method further includes routing electrical leads from each photovoltaic cell through one or more openings along the ridge of the roof structure.

Abstract: An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.

Abstract: An encapsulated optoelectronic device includes: a first barrier layer; an electroluminescence device coupled to the first barrier layer, and comprising a substrate and an electroluminescence element both defining a lateral side, and the electroluminescence element comprising a first electrode disposed on the substrate, a second electrode, and an optoelectronically active layer between the first and second electrodes; a second barrier layer coupled to the electroluminescence device; and an adhesive located between and connecting the first and second barrier layers, and at least coupled to the lateral side of the electroluminescence device to seal the electroluminescence device; a first conductive area electrically coupled to the first electrode and electrically insulated from the second electrode and a second conductive area; the second conductive area electrically coupled to the second electrode and electrically insulated from the first electrode and the first conductive area.

Abstract: An optoelectonice device array includes a plurality of packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package overlaps at least one adjacent package, and may be hermetically sealed.

Abstract: An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.

Abstract: Organic light emitting devices include a transparent substrate, a first transparent electrode disposed on the transparent substrate, a second electrode, an electroluminescent layer sandwiched between the electrodes, and a getter layer disposed on a light emitting surface of the substrate opposite the first transparent electrode, and comprising a metal selected from beryllium, magnesium, calcium, strontium, barium, radium and titanium.

Abstract: A hermetic electrical package includes a first transparent barrier layer; a second barrier layer bonded to the first barrier layer, and defining a plurality of feedthrough apertures; an optoelectronic device sandwiched between the first and second barrier layers, the optoelectronic device comprising an anode, a photoelectrically active layer, and a cathode; and a conductive patch electrically coupled to the cathode or anode and disposed across at least one feedthrough aperture.

Abstract: An article of manufacture comprises a thin film solid state lighting device, such as an organic light emitting diode (OLED) device, having a planar light emitting side and an opposite planar mounting side and including electrodes disposed on the planar mounting side of the thin film solid state lighting device, the electrodes including a magnetic material configured to conductively convey electrical drive current to drive the thin film solid state lighting device to emit light at the planar light emitting principal side. The article of manufacture may further comprise a fixture having a planar surface with magnets arranged to mate with the electrodes to magnetically secure the thin film solid state lighting device with the fixture and to concurrently form electrically conductive paths including the magnetic material of the electrodes configured to conductively convey electrical drive current. Thus this magnetic connection provides both mechanical support and electrical conduction path.

Abstract: An encapsulation structure comprises a first barrier layer, and an electroluminescence device configured to be coupled to the first barrier layer and comprising a substrate and an electroluminescence element both defining a lateral side. The electroluminescence element comprises a first electrode disposed on the substrate, a second electrode, and an organic light-emitting layer disposed between the first and second electrodes. Further, the encapsulation structure comprises a second barrier layer configured to be coupled to the electroluminescence device, and an adhesive configured to locate between and connect the first and second barrier layers, and at least to be coupled to the lateral side of the electroluminescence device to seal the electroluminescence device between the first and second barrier layers. An encapsulation method is also presented.

Abstract: An encapsulated optoelectronic device includes: a first barrier layer; an electroluminescence device configured to be coupled to the first barrier layer, and comprising a substrate and an electroluminescence element both defining a lateral side, and the electroluminescence element comprising a first electrode disposed on the substrate, a second electrode, and an optoelectronically active layer disposed between the first and second electrodes; a second barrier layer configured to be coupled to the electroluminescence device; and an adhesive configured to locate between and connect the first and second barrier layers, and at least to be coupled to the lateral side of the electroluminescence device to seal the electroluminescence device between the first and second barrier layers; a first conductive area disposed on the first barrier layer, located between the first and second barrier layers, and configured to be electrically coupled to the first electrode and electrically insulated from the second electrode and

Abstract: A method of forming a plurality of solid conductive bumps for interconnecting two conductive layers of a circuit board with substantially coplanar upper surfaces. The method comprises the steps of applying a continuous homogenous metal layer onto a dielectric substrate, applying a first photoresist and exposing and developing said first photoresist to define a pattern of conductive bumps, etching the metal layer exposed by said development to form said plurality of conductive bumps, removing said first photoresist, applying a second photoresist onto the metal layer, exposing and developing said second photoresist to define a pattern of conductive bumps and circuit lines; etching the metal layer exposed by said development to form a pattern of circuit lines in said metal layer; and removing said second photoresist. The methods of the present invention also provides for fabricating a multilayer circuit board and a metallic border for providing rigidity to a panel.