Abstract: An inductor may include a conductive line including a material in which an electrical resistance varies depending on an electric field applied to the material and/or first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. A method of operating an inductor may include applying current to a conductive line of the inductor. The conductive line may include a material in which an electrical resistance may vary depending on an electric field applied to the material. The current may be applied to the conductive line via first and second electrodes electrically connected to first and second end portions of the conductive line, respectively.

Abstract: A swimming goggle has improved to snugly fit around a user's eyes for comfort wearing. An air channel is adopted to remove an ocular pain due to a pressure in an inner space where the user's eyes are placed when the swimming goggles are worn. The swimming goggle comprises a pair of glasses disposed at a predetermined distance in front of the user's eyes, a set of looped cushions surrounding the glasses for directly contacting around the user's eyes, and a vent hole interconnecting an outer surface with an inner surface of the glasses or penetrating the looped cushions.

Abstract: A Schottky diode and a memory device including the same are provided. The Schottky diode includes a first metal layer and an Nb-oxide layer formed on the first metal layer.

Abstract: Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene.

Abstract: Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

Abstract: Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.

Abstract: Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.

Abstract: A radar detector enabling hands-free communication over a mobile phone by connecting the mobile phone to the radar detector. The radar detector includes a horn antenna; a signal-processing unit (SPU) for detecting a signal received by the horn antenna; a laser module for receiving a laser signal; a central processing unit (CPU) for controlling the SPU; a pulse delay unit for delaying or sustaining a CPU pulse; a sweep voltage generator unit for driving the SPU; a warning unit for warning the detected signal; an audio amplifier controller connected to the CPU and the warning unit to amplify an audio signal; and a connecting unit installed to connect the audio amplifier controller with a mobile phone. The connecting unit includes a microphone, a switch for reception of a signal from the mobile phone, and a connection portion for connection to the mobile phone.

Abstract: A sequence generation method for allowing a reception end to effectively detect a sequence used for a specific channel of an OFDM communication system, and a signal transmission/reception method using the same are disclosed. During the sequence generation, an index is selected from among the index set having the conjugate symmetry property between indexes, and a specific part corresponding to the frequency “0” is omitted from a transmitted signal. In addition, a reception end can calculate a cross-correlation value between a received (Rx) signal and each sequence using only one cross-correlation calculation based on the conjugate symmetry property.

Abstract: Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 ?m; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene ?-olefinic copolymer rubber having an average particle size of 0.1-0.8 ?m. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.

Abstract: Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

Abstract: A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.

Abstract: A threshold switching operation method of a nonvolatile memory device may be provided. In the threshold switching operation method of a nonvolatile memory a pulse voltage may be supplied to a metal oxide layer of the nonvolatile memory device. Accordingly, it may be possible to operate the nonvolatile memory device at a lower voltage with lower threshold switching current.

Abstract: Provided is a nonvolatile memory device and method of operating and fabricating the same for higher integration and higher speed, while allowing for a lower operating current. The nonvolatile memory device may include a semiconductor substrate. Resistive layers each storing a variable resistive state may be formed on the surface of the semiconductor substrate. Buried electrodes may be formed on the semiconductor substrate under the resistive layers and may connect to the resistive layers. Channel regions may be formed on the surface of the semiconductor substrate and connect adjacent resistive layers to each other, but not to the buried electrodes. Gate insulating layers may be formed on the channel regions of the semiconductor substrate. Gate electrodes may be formed on the gate insulating layers and extend over the resistive layers.

Abstract: Provided is a non-volatile memory device including a variable resistance material and method of fabricating the same. The non-volatile memory device may include a lower electrode, an intermediate layer on the lower electrode including one material selected from the group consisting of HfO, ZnO, InZnO, and ITO, a variable resistance material layer on the intermediate layer, and an upper electrode on the variable resistance material layer. A memory device having multi-level bipolar switching characteristics based upon the size of the device may be provided.

Abstract: A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

Abstract: A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.

Abstract: A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.

Abstract: Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.

Abstract: The present invention relates to an acrylic rubber-modified copolymer and the styrenic thermoplastics composition using the same. More particularly, the present invention relates to the styrenic thermoplastics composition having superior appearance and thermoformability, which is obtained by adding 0.5-20 parts by weight of an acrylic rubber-modified copolymer having a rubber particle size ranging from 800 to 6, 000 ?to 100 parts by weight of a resin of 10-50 parts by weight of a graft copolymer comprising rubber-modified styrene and 30-70 parts by weight of a copolymer comprising styrene.