Abstract: The invention provides methods, uses and compounds for treating cancers. For example, certain embodiments provide a method for treating cancer in a mammal comprising administering to the mammal an effective amount of 3,5,7,8,4?-Pentahydroxyflavone, or a pharmaceutically acceptable salt thereof. Certain other embodiments of the invention provide methods for inactivating ornithine decarboxylase (ODC) in a cell comprising contacting the cell in vitro or in vivo with an effective amount of 3,5,7,8,4?-Pentahydroxyflavone, or a pharmaceutically acceptable salt thereof. The invention also provides a dermal product comprising 3,5,7,8,4?-Pentahydroxyflavone, or a pharmaceutically acceptable salt thereof, wherein the product prophylactically or therapeutically treats sunburn or other sun exposure and/or skin cancer in a mammal.

Abstract: An electronic device may be provided to include: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction; a first source region and a first drain region formed in the first active region; a second source region and a second drain region formed in the second active region; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction; first and second stacked structures formed over the first and second drain regions; and first and second bit lines formed over the first and second stacked structures, wherein the first and second bit lines are extended in the first direction.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: An electronic device may be provided to include: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction; a first source region and a first drain region formed in the first active region; a second source region and a second drain region formed in the second active region; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction; first and second stacked structures formed over the first and second drain regions; and first and second bit lines formed over the first and second stacked structures, wherein the first and second bit lines are extended in the first direction.

Abstract: An electronic device may be provided to include: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction; a first source region and a first drain region formed in the first active region; a second source region and a second drain region formed in the second active region; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction; first and second stacked structures formed over the first and second drain regions; and first and second bit lines formed over the first and second stacked structures, wherein the first and second bit lines are extended in the first direction.

Abstract: An electronic device including a semiconductor memory is provided to include a mat region comprising a plurality of memory cells, each including a second transistor; a first switching region located at a side of the mat region and including first transistors; and a second switching region located at the other side of the mat region and including third transistors, wherein the second transistors comprise: a plurality of second active regions; and a plurality of second gate structures extending in the first direction to cross the second active regions, wherein each second active regions is divided into a first side portion, a middle portion and a second side portion that are arranged alternately and repeatedly in the first direction, wherein the first transistors and the third transistors include their active regions and gate structures which are arranged in the same manner as those of the second transistors.

Abstract: A Spirulina maxima extract of the present invention and Allophycocyanin (APC), R-phycoerythrin (R-PE), and C-phycocyanin (C-PC), which are components of the Spirulina maxima extract, show an effect of inhibiting cell death and A2E (pyridinium bis-retinoid), oxidation due to blue light, and therefore can be usefully applied as an active ingredient in a composition for preventing and treating retinal disease.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: An electronic device may be provided to include: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction; a first source region and a first drain region formed in the first active region; a second source region and a second drain region formed in the second active region; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction; first and second stacked structures formed over the first and second drain regions; and first and second bit lines formed over the first and second stacked structures, wherein the first and second bit lines are extended in the first direction.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: Disclosed herein is a delivery apparatus for delivering a self-expanding stent to a target position along the inside of a microcatheter, the delivery apparatus including an outer tube configured to communicate with the microcatheter, a shaft part configured to pass through the microcatheter while moving forwards and backwards in the outer tube and including a distal marker and a proximal marker to specify a position of the stent at the target position, and an elastic coating part formed on the outer surface of the shaft part between the distal marker and the proximal marker.

Abstract: A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: The invention provides methods, uses and compounds for treating cancers.

Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Abstract: Provided is a screen printer including a main body in which an operation region and at least one introduction and extraction portion are formed, wherein the operation region includes an installation position of a stencil mask therein, and, through the at least one introduction and extraction portion, the stencil mask is introduced into the operation region and is extracted from the operation region to an outside of the main body; and a conveyance unit which conveys the stencil mask introduced into and disposed at the operation region to the at least one introduction and extraction portion when the stencil mask is replaced by a new stencil mask introduced through the at least one introduction and extraction portion, and conveys the new stencil mask to the operation region.

Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0?x<1, 0<y?1) and each of the plurality of quantum well layers contains a different indium (In) content. And, among the plurality of quantum barrier layers, a quantum barrier layer adjacent to a quantum well layer having a higher indium (In) content is thicker than a quantum barrier layer adjacent to a quantum well layer having a lower indium (In) content.

Abstract: A portable terminal provides a fingerprint-based shortcut key to realize both security and one touch convenience. The portable terminal includes a fingerprint sensor for recognizing user's fingerprint, a memory for storing fingerprint data, and a controller for mapping and storing first fingerprint data inputted through the fingerprint sensor and a function of the portable terminal in the memory. Upon input of second fingerprint data through the fingerprint sensor, there is a comparison of the first fingerprint data with the second fingerprint data, and performing the function mapped to the first fingerprint data when the first fingerprint data is identical to the second fingerprint data. The portable terminal may perform the authentication and provide the result to another portable terminal, or an authentication server can perform the comparison.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.