Abstract: A seat-interlocking leg rest control system includes: a first actuator configured to move a seat for a vehicle, the seat including a seat cushion and a seatback, in a forward-backward direction or an upward-downward direction of the vehicle; a second actuator configured to rotate a leg rest, rotatably coupled to the front end portion of the seat cushion, in the upward-downward direction; and a controller connected to the first actuator and the second actuator to control operation of the second actuator such that the rotation angle of the leg rest is limited based on the position of the seat.

Abstract: A coil component includes a body; first and second coil portions spaced apart from each other in the body; first and second external electrodes disposed on the body to be spaced apart from each other and connected to both ends of the first coil portion; and first and second ground electrodes spaced apart from each other on the body and connected to both ends of the second coil portion.

Abstract: The present disclosure provides a seat cushion extension device for a fold-and-dive seat. The seat cushion extension device may include a pair of seat cushion side frames arranged at a predetermined interval, a seatback frame rotatably connected to the pair of seat cushion side frames and having a guide pin formed on an outer surface thereof, a seat cushion frame, a pair of links rotatably connected between the pair of seat cushion side frames and a front end of the seat cushion frame, and a pair of extension frames. Each of the pair of extension frames may have a front end connected to the seat cushion frame, and a rear end formed with a guide hole, into which a guide pin may be inserted. The seat cushion extension device may facilitate a forward extension of a seat cushion regardless of a position of a seatback of the fold-and-dive seat.

Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: An air conditioner for a vehicle including an air-conditioning case divided into a plurality of air passageways by a separation wall. A heating heat exchanger is disposed inside the air-conditioning case and exchanges heat with air to heat the interior of the vehicle. A perforated member is disposed at a downstream side of the heating heat exchanger and has a plurality of perforated holes through which the air passing the heating heat exchanger passes, and a partition wall is disposed between the heating heat exchanger and the perforated member to divide the air passageway of the air-conditioning case into a plurality of air passageways, wherein the partition wall is formed integrally with the perforated member.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A method for managing a plurality of federated learning models incorporated to a device includes monitoring state information of the computer device to which a plurality of federated learning models is mounted; and performing learning scheduling on the plurality of federated learning models based on the state information and requirements for each model.

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

Abstract: A semiconductor package includes a semiconductor chip having at least one chip pad disposed on one surface thereof; a wiring pattern disposed on top of the semiconductor chip and having at least a portion thereof in contact with the chip pad to be electrically connected to the chip pad; and a solder bump disposed on outer surface of the wiring pattern to be electrically connected to the chip pad through the wiring pattern.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A test handler includes a pusher which includes a pusher end which comes into contact with a DUT (Device Under Test) to transfer heat, and a pusher body which conducts heat to the pusher end, the pusher end separating a test tray for fixing the DUT and the pusher body from each other; a porous match plate including a pusher arrangement region in which the pusher body is placed, and a plurality of holes placed adjacent to the pusher arrangement region; a heater placed on an upper surface of the porous match plate to control temperature of the pusher; and an airflow input port placed on the heater to provide the airflow to the plurality of holes, in which the airflow passes through the plurality of holes and passes through a separated space between the test tray and the pusher body.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: Provided is a module mounted in a server to share a block-level storage and resources. The module includes: a HBA card unit for connection to an external server; an internal disk unit providing a storage space inside a server; a setting unit allocating the storage space of the internal disk unit; a target driver unit implementing a SCSI protocol, communicating with the external server and setting volumes to a storage mode or a server mode; and a target core unit routing data of the internal disk unit and the target driver unit depending on the storage mode or the server mode. The storage mode allows the volumes to be used as a storage of the external server. The server mode allows the volumes to be used as a storage inside the server. The target driver unit can switch the volumes from the server mode to the storage mode.

Abstract: The present invention relates to an anode active material including a composite of lithium titanium oxide (LTO), a silicon-containing material and crystalline carbon, a method for manufacturing the same, and a lithium secondary battery including the same. The composite according to the present invention satisfies high capacity, high energy density and high lifespan stability, improves fast charging characteristics, and also improves mechanical strength, so a lithium secondary battery using the composite as an anode active material can be usefully used for a next-generation electric vehicle, energy storage systems, etc.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: Disclosed is a method for predicting disease based on a medical image performed by a computing device. The method includes: generating a feature vector related to predictive values of brain disease for each of 2D medical images included in a 3D medical image, using a pre-trained first model; estimating importance indicating prediction accuracy for each of the 2D medical images based on the feature vector, using a pre-trained second model; and selecting at least one model input image suitable for prediction of the brain disease from among the 2D medical images based on the importance.

Abstract: According to an embodiment of the present disclosure, a method of detecting a white matter lesion based on a medical image performed by a computing device is disclosed. The method may include: receiving a medical image including at least one brain region; and estimating a first white matter lesion and a second white matter lesion based on the medical image using a pre-trained neural network model.

Abstract: Disclosed is a method for analyzing a thickness of a cortical region, performed by a computing device. The method may include: extracting a plurality of interfaces included in a cortical region based on a mask generated from a medical image including at least one brain region; and estimating a thickness of the cortical region based on the plurality of interfaces.