Dong-Sun Sheen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A method of manufacturing a semiconductor device is provided. A first interlayer insulating layer is formed on a silicon substrate, and a lower metal layer is formed on the first interlayer insulating layer. A first insulating layer is formed on the first interlayer insulating layer including the lower metal layer, moisture contained in the first insulating layer is removed by N.sub.2 or N.sub.2 O plasma. Thereafter, a SOG layer and a second insulating layer are sequentially formed on the first insulating layer.
Abstract: Disclosed herein is a method of manufacturing a semiconductor device, which comprises steps of forming metal patterns, irradiating an electron beam to electrically neutralize the charge distribution of the metal layer and forming an O.sub.3 -TEOS layer used for planarization of the interlayer insulating layer.